Transistors IC SMD Type Surface Mount NPN Silicon Power Darlington Transistor KZT122 (CZT122) SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 High current (max. 5A). Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 3 2 3 Emitter +0.1 0.70-0.1 2.9 4.6 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V IC 5 A Collector current ICP 8 A Base current IB 120 mA power dissipation PD 2 W Thermal Resistance.Junction-to-Ambient R 62.5 JA Junction temperature Tj 150 Storage temperature Tstg -65 to +150 /W Electrical Characteristics Ta = 25 Parameter Collector to emitter breakdown voltage Symbol Testconditons VCEO IC=30mA Min Typ Max 100 Unit V Collctor cutoff current ICEO VCE=50V 500 A Collector cutoff current ICBO VCB = 100 V 200 A Emitter cutoff current IEBO VEB = 5.0 V 2.0 mA DC current gain hFE IC = 500 mA; VCE =3.0 V 1000 IC = 3A; VCE = 3.0V 1000 Collector to emitter saturation voltage VCE(sat) IC = 3.0A; IB = 12mA 2.0 V Base to emitter saturation voltage VBE(sat) IC = 5.0A; IB = 20mA 4.0 V Output capacitance Cob VCB = 10 V, IE = 0,f=1.0MHz Transition frequency fT IC= 3A; VCE =4V; f = 1.0 MHz 200 4.0 pF MHz www.kexin.com.cn 1