Transistors SMD Type NPN Darlington Transistors BCV27-HF (KCV27-HF) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 TR1 ● Low voltage (max. 60 V) 1 TR2 ● High DC current gain (min. 20 000). ● Complements to BCV26-HF 0.55 C ● Medium current (max. 500 mA) +0.1 1.3 -0.1 B +0.1 2.4 -0.1 ■ Features 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.05 0.1 -0.01 +0.1 0.97 -0.1 E ● Pb−Free Package May be Available. The G−Suffix Denotes a 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter Pb−Free Lead Finish 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 Emitter - Base Voltage VEBO 10 Collector Current - Continuous IC 500 Collector Current - Pulse ICP 800 Base Current IB 100 Collector Power Dissipation PC 250 mW RθJA 500 ℃/W TJ 150 Tstg -65 to 150 Thermal Resistance From Junction to Ambient Junction Temperature Storage Temperature Range Unit V mA ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 40 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 30 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 10 Collector-base cut-off current ICBO VCB= 30 V , IE= 0 100 Emitter cut-off current IEBO VEB= 10V , IC=0 100 V Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=0.1mA 1 Base - emitter saturation voltage VBE(sat) IC= 100 mA, IB= 0.1mA 1.5 Base - emitter on-state voltage VBE(on) hFE DC current gain Transition frequency fT VCE= 5V, IC= 10mA nA V 1.4 VCE= 5V, IC= 1mA 4000 VCE= 5V, IC= 10mA 10000 VCE= 5V, IC= 100mA 20000 VCE=5V, IC=30mA,f=100MHz Unit 220 MHz ■ Marking Marking FF* F www.kexin.com.cn 1 Transistors SMD Type NPN Darlington Transistors BCV27-HF (KCV27-HF) ■ Typical Characterisitics 80000 hFE 60000 40000 20000 0 10−1 1 10 VCE = 2 V. Fig.1 DC current gain; typical values. 2 www.kexin.com.cn 102 IC (mA) 103