MOSFET SMD Type P-Channel MOSFET SI2301DS-HF (KI2301DS-HF) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● RDS(ON) ＜ 190mΩ (VGS =-2.5V) 1 ● Pb−Free Package May be Available. The G−Suffix Denotes a 0.55 ● RDS(ON) ＜ 130mΩ (VGS =-4.5V) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● VDS (V) =-20V 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1.1 +0.2 -0.1 Pb−Free Lead Finish 0-0.1 G 2. Source 3. Drain 1 3 S +0.1 0.68 -0.1 1. Gate D 2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current *1 Ta=25℃ Ta=70℃ Pulsed Drain Current *2 Power Dissipation *1 ID IDM Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient *1 Thermal Resistance.Junction- to-Ambient *3 PD RthJA Unit V -2.3 -1.5 A -10 1.25 0.8 100 166 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 W ℃/W ℃ *1 Surface Mounted on FR4 Board, t ≤ 5 sec. *2 Pulse width limited by maximum junction temperature. *3 Surface Mounted on FR4 Board. www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET SI2301DS-HF (KI2301DS-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance *1 RDS(On) On state drain current *1 ID(ON) Forward Transconductance *1 gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate Source Charge Qgs Test Conditions ID=-250μA, VGS=0V Min Typ -20 VDS=-20V, VGS=0V -1 VDS=-20V, VGS=0V, TJ=55℃ -10 VDS=0V, VGS=±8V VDS=VGS ID=-250μA -0.45 190 -6 -3 VDS=-5V, ID=-2.8A 6.5 VGS=0V, VDS=-6V, f=1MHz *2 87 5.8 VGS=-4.5V, VDS=-6V, ID=-2.8A *2 VGEN=-4.5V, VDS=-6V, RL=6Ω,RG=6Ω ID=1.0A *3 IS=-1.6A,VGS=0V *1 Pulse test: PW ≤ 300us duty cycle ≤ 2%. *2 For DESIGN AID ONLY, not subject to production testing. *3 Switching time is essentially independent of operating temperature. ■ Marking Marking 2 A1* F www.kexin.com.cn 25 36 60 70 Continuous Source Current (Diode Conduction) *1 Is VSD nC 42 34 tf 10 0.85 13 Diode Forward Voltage pF 223 1.7 Turn-Off Fall Time S 415 Qgd tr mΩ A td(on) td(off) V 130 Turn-On DelayTime Turn-Off DelayTime nA -1 VGS=-2.5V, ID=-2.0A VGS=-2.5V, VDS ≤-5V μA ±100 VGS=-4.5V, ID=-2.8A VGS=-4.5V, VDS ≤-5V Unit V Gate Drain Charge Turn-On Rise Time Max -0.8 ns 60 -1.6 A -1.2 V MOSFET SMD Type ■ Typical Characterisitics P-Channel MOSFET SI2301DS-HF (KI2301DS-HF) Ou t p u t Ch ar ac t er i s t i c s 10 Tr an s f er Ch ar ac t er i s t i c s 10 V GS = 5, 4.5, 4, 3.5, 3 V 2.5 V 6 2 V 25 C 6 125 C 4 ID - 4 T C = - 55C 8 Drain Current (A) I D - Drain Current (A) 8 2 0, 0.5, 1 V 2 1.5 V 0 0 1 2 3 4 0 0.0 5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1000 ) 0.6 0.5 Capacitance (pF) 0.4 0.3 600 C iss 400 - V GS = 2.5 V 800 0.2 V GS = 4.5 V C oss C rDS(on) - On-Resistance ( 0.5 C rss 200 0.1 0.0 0 0 2 4 6 8 10 0 Gate Charge 5 6 9 12 VDS - Drain-to-Source Voltage (V) 1.8 V DS = 6 V I D = 2.8 A 1.6 On-Resistance vs. Junction T emperature V GS = 4.5 V I D = 2.8 A ) 4 r DS(on) - On-Resistance ( (Normalized) VGS- Gate-to-Source Voltage (V) ID - Drain Current (A) 3 3 2 1 0 0 2 4 6 Q - Total Gate Charge (nC) 8 1.4 1.2 1.0 0.8 0.6 - 50 0 50 100 150 TJ - Junction Temperature (。 C) www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET SI2301DS-HF (KI2301DS-HF) ■ Typical Characterisitics Source-Drain Diode Forward V oltage 10 On-Resistance vs. Gate-to-Source 0.6 Voltage r DS(on)- On-Resistance ( I S - Source Current (A) ) 0.5 T J = 150 C T J = 25 C 1 0.4 0.3 I D = 2.8 A 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 VSD - Source-to-Drain Voltage (V) 6 8 Single Pulse Power 14 12 0.3 10 0.2 I D = 250 A Power (W) VGS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) Threshold V oltage 0.4 2 0.1 8 T C = 25 C Single Pulse 6 0.0 4 - 0.1 2 . - 0.2 - 50 0 50 100 0 150 0.01 0.10 TJ - Temperature ( C) 1.00 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 4 www.kexin.com.cn 1 10 30