RENESAS CR02AM-8-ETZ

CR02AM-8
Thyristor
Low Power Use
REJ03G0542-0100
Rev.1.00
Mar.28.2005
Features
• IT (AV) : 0.3 A
• VDRM : 400 V
• IGT : 100 µA
• Planar Passivation Type
• Completed Pb free product
Outline
RENESAS Package code: PRSS0003DE-A
(Package name: TO-92(3))
2
1. Cathode
2. Anode
3. Gate
3
1
3
2
1
Applications
Solid state relay, leakage protector, fire alarm, timer, ring counter, electric blanket, protective circuit for acoustic
equipment, strobe flasher, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
Rev.1.00,
Mar.28.2005,
page 1 of 7
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Voltage class
8
400
500
320
400
320
Unit
V
V
V
V
V
CR02AM-8
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
0.47
0.3
Unit
A
A
ITSM
10
A
I2 t
0.4
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
0.1
0.01
6
6
0.1
– 40 to +125
– 40 to +125
0.23
W
W
V
V
A
°C
°C
g
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine half wave
180° conduction, Ta = 30°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. With gate to cathode resistance RGK = 1 kΩ.
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Symbol
IRRM
IDRM
Min.
—
—
Typ.
—
—
Max.
0.1
0.1
Unit
mA
mA
On-state voltage
VTM
—
—
1.6
V
Ta = 25°C, ITM = 0.6 A,
instantaneous value
Gate trigger voltage
VGT
—
—
0.8
V
Tj = 25°C, VD = 6 V,
Note3
IT = 0.1 A
Gate non-trigger voltage
VGD
0.2
—
—
V
Tj = 125°C, VD = 1/2 VDRM,
RGK = 1 kΩ
Gate trigger current
IGT
20
—
100Note2
µA
Tj = 25°C, VD = 6 V,
Note3
IT = 0.1 A
Holding current
IH
—
—
3
mA
Rth (j-a)
—
—
180
°C/W
Tj = 25°C, VD = 12 V,
RGK = 1 kΩ
Junction to ambient
Thermal resistance
Test conditions
Tj = 125°C, VRRM applied
Tj = 125°C, VDRM applied,
RGK = 1 kΩ
Notes: 2. If special values of IGT are required, choose item E from those listed in the table below if possible.
Item
B
E
IGT (µA)
20 to 50
20 to 100
The above values do not include the current flowing through the 1 kΩ resistance between the gate and
cathode.
3. IGT, VGT measurement circuit.
A1
3V
DC
IGS
IGT
A3
A2
RGK
1
1kΩ
Switch
2
60Ω
TUT
V1
6V
DC
VGT
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
Rev.1.00,
Mar.28.2005,
page 2 of 7
CR02AM-8
Performance Curves
101
7 Ta = 25°C
5
3
2
Rated Surge On-State Current
10
Surge On-State Current (A)
On-State Current (A)
Maximum On-State Characteristics
100
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–1
7
5
3
2
VFGM = 6V
PGM = 0.1W
PG(AV) = 0.01W
VGT = 0.8V
IGT = 100µA
(Tj = 25°C)
VGD = 0.2V
IFGM = 0.1A
3
2
1
2 3 4 5 7 101
2 3 4 5 7 10 2
× 100 (%)
103
7
5
3
2
Typical Example
102
7
5
3
2
101
7
5
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
1.0
0.9
Gate Trigger Voltage (V)
4
Gate Trigger Current vs.
Junction Temperature
10–2
10–2 2 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Distribution
0.8
Typical Example
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Rev.1.00,
5
Gate Characteristics
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
100
6
Conduction Time (Cycles at 60Hz)
Mar.28.2005,
page 3 of 7
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
7
5
3
2
7
On-State Voltage (V)
102
101
8
0
100
10–2
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
7
5
3
2
9
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
200
180
160
140
120
100
80
60
40
20
0
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
Time (s)
CR02AM-8
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
0.8
160
0.7
140
θ
120
360°
0.6
180°
120°
0.5
60°
0.4
90°
θ = 30°
0.3
θ
0.2
360°
Resistive,
inductive loads
0.1
0
0
0.1
0.2
Ambient Temperature (°C)
Average Power Dissipation (W)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
20
θ = 30° 60°
0
90° 120°
0.1
0.2
180°
0.4
0.3
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
0.7
Ambient Temperature (°C)
Average Power Dissipation (W)
40
Average On-State Current (A)
180°
120°
0.6
90°
0.5
60°
0.4
θ = 30°
0.3
θ
0.2
θ
360°
0.1
140
θ
120
360°
0
0.1
0.2
0.3
80
60
40
20
0
0.5
0.4
θ
Resistive loads
Natural convection
100
θ = 30°
Resistive loads
0
0
0.1
60° 90° 120°
0.2
180°
0.4
0.3
0.5
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
0.8
160
DC
0.7
180°
0.6
270°
120°
0.5
60°
0.4
90°
θ = 30°
0.3
θ
0.2
360°
0.1
0
Resistive,
inductive loads
0
0.1
0.2
0.3
0.4
Average On-State Current (A)
Mar.28.2005,
page 4 of 7
0.5
Ambient Temperature (°C)
Average Power Dissipation (W)
60
Average On-State Current (A)
0.8
Rev.1.00,
80
0
0.4
0.3
Resistive,
inductive loads
Natural convection
100
Resistive,
inductive loads
Natural convection
140
θ
360°
120
100
θ = 30°
60°
90°
120°
180°
270°
DC
80
60
40
20
0
0
0.1
0.2
0.3
0.4
Average On-State Current (A)
0.5
Typical Example
RGK = 1kΩ
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
Breakover Voltage vs.
Gate to Cathode Resistance
120
Typical Example
Tj = 125°C
100
80
60
40
20
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Junction Temperature (°C)
Gate to Cathode Resistance (kΩ)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Holding Current vs.
Junction Temperature
100
80
60
#2
40
#1
Typical Example
# 1 IGT(25°C)=10µA
20
# 2 IGT(25°C)=66µA
Tj = 125°C, RGK = 1kΩ
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Holding Current (mA)
120
102
7
5
3
2
101
7
5
3
2
Tj = 25°C
Typical Example
IH(25°C) = 1mA
IGT(25°C) = 25µA
Distribution
Typical Example
100
7
5
3
2
10–1
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Repetitive Peak Reverse Voltage vs.
Junction Temperature
500
Typical Example
IGT(25°C) IH(1kΩ)
1.6mA
# 1 13µA
# 2 59µA
1.8mA
400
#1
300
#2
200
100
Tj = 25°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Mar.28.2005,
page 5 of 7
× 100 (%)
Rate of Rise of Off-State Voltage (V/µs)
Gate to Cathode Resistance (kΩ)
Rev.1.00,
Breakover Voltage (RGK = rkΩ)
Breakover Voltage (RGK = 1kΩ)
160
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Holding Current (RGK = rkΩ)
Holding Current (RGK = 1kΩ)
× 100 (%)
Breakover Voltage (dv/dt = vV/µs)
Breakover Voltage (dv/dt = 1V/µs)
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
× 100 (%)
Breakover Voltage vs.
Junction Temperature
× 100 (%)
CR02AM-8
160
Typical Example
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
CR02AM-8
Gate Trigger Current (tw)
Gate Trigger Current (DC)
× 100 (%)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5
4
3
2
#1
Typical Example
IGT(25°C)
# 1 10µA
# 2 # 2 66µA
102
7
5
4
3
2
Tj = 25°C
101
100
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
Rev.1.00,
Mar.28.2005,
page 6 of 7
CR02AM-8
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-43A
PRSS0003DE-A
TO-92(3)
0.23g
4.8 ± 0.3
Unit: mm
2.3 Max
0.7
0.60 Max
0.55 Max
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.42 Max
1.27
2.54
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Vinyl sack
500 Type name
Form A8
Taping
2500 Type name – ETZ
Note : Please confirm the specification about the shipping in detail.
Rev.1.00,
Mar.28.2005,
page 7 of 7
Standard order
code example
CR02AM-8-E
CR02AM-8-ETZ
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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