JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT127 SOT-223 TRANSISTOR (PNP) FEATURES z Complementary to CZT122 z Silicon Power Darlington Transistors z Low speed switching and amplifier applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 1 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1m A,IE=0 -100 V Collector-emitter breakdown voltage V(BR)CEO IC=-30mA,IB=0 -100 V Collector cut-off current ICBO VCB=-100V,IE=0 -200 uA Base cut-off current ICEO VCE=-50V,IB=0 -500 uA Emitter cut-off current IEBO VEB=-5V,IC=0 -2 mA hFE(1) VCE=-3V,IC=-0.5A 1000 hFE(2) VCE=-3V,IC=-3A 1000 DC current gain VCE(sat)1 IC=-3A,IB=-12mA -2 V VCE(sat)2 IC=-5A,IB=-20mA -4 V Base-emitter voltage VBE(on) VCE=-3V,IC=-3A -2.5 V Transition frequency fT VCE=-4V,IC=-3A,f=1MHz Cob VCB=-10V, IE=0, f=1.0MHz Collector-emitter saturation voltage Collector output capacitance 4 MHz 200 pF A,Jun,2011