IS31AP4990D

IS31AP4990D
1.2W AUDIO POWER AMPLIFIER WITH ACTIVE-LOW SHUTDOWN MODE
June 2014
DESCRIPTION
FEATURES
The IS31AP4990D has been designed for demanding
audio applications such as mobile phones and permits
the reduction of the number of external components.
An externally-controlled shutdown mode reduces the
supply current to less than 1μA. It also includes
internal thermal shutdown protection.
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The unity-gain stable amplifier can be configured by
external gain setting resistors.
APPLICATIONS
It is capable of delivering 1.2W of continuous RMS
output power into an 8Ω load @ 5V.
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Operating from VCC = 2.7V ~ 5.5V
1.2W output power @ VCC = 5V, THD+N= 1%,
f = 1kHz, with 8Ω load
Ultra-low consumption in shutdown mode (1μA)
Near-zero pop & click
Ultra-low distortion
Unity gain stable
UTQFN-9L (1.5mm × 1.5mm) package
Mobile phones
PDAs
Portable electronic devices
Notebook computer
TYPICAL APPLICATION CIRCUIT
Figure 1
Typical Application Circuit (Single-ended Input)
Integrated Silicon Solution, Inc. – www.issi.com
Rev. C, 06/24/2014
1
IS31AP4990D
Figure 2
Typical Application Circuit (Differential Input)
Integrated Silicon Solution, Inc. – www.issi.com
Rev. C, 06/24/2014
2
IS31AP4990D
PIN CONFIGURATION
Package
Pin Configuration (Top View)
UTQFN-9L
PIN DESCRIPTION
No.
Pin
Function Description
A1
IN-
Negative input of the first amplifier. Connected to the feedback
resistor RF- and to the input resistor RIN-.
A2
OUT-
Negative output. Connected to the load and to the feedback
resistor RF-.
A3
IN+
Positive input of the first amplifier.
B1,B2
GND
Ground.
B3
VCC
Supply voltage.
C1
BYPASS
Bypass capacitor pin which provides the common mode voltage
(VCC/2).
C2
OUT+
Positive output. Connected to the load.
C3
SDB
The device enters in shutdown mode when a low level is applied
on this pin.
Integrated Silicon Solution, Inc. – www.issi.com
Rev. C, 06/24/2014
3
IS31AP4990D
ORDERING INFORMATION
Industrial Range: -40°C to +85°C
Order Part No.
Package
QTY/Reel
IS31AP4990D-UTLS2-TR
UTQFN-9, Lead-free
3000
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. – www.issi.com
Rev. C, 06/24/2014
4
IS31AP4990D
ABSOLUTE MAXIMUM RATINGS
Supply voltage, VCC
Voltage at any input pin
Maximum junction temperature, TJMAX
Storage temperature range, TSTG
Operating temperature range, TA
ESD (HBM)
ESD (CDM)
-0.3V ~ +6.0V
-0.3V ~ VCC+0.3V
150°C
-65°C ~ +150°C
−40°C ~ +85°C
7kV
500V
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = -40°C ~ +85°C, VCC = 2.7V ~ 5.5V, unless otherwise noted. Typical value are TA = +25°C.
Symbol
Parameter
Condition
Min.
Typ.
2.7
Max.
Unit
5.5
V
VCC
Power supply
ICC
Quiescent current
ISD
Shutdown current
VIH
Shutdown voltage input high
VIL
Shutdown voltage input low
0.4
V
VOS
Output offset voltage
25
mV
VCC = 5V, VIN = 0V, IO = 0A, no load
3.8
6.4
VCC = 3V, VIN = 0V, IO = 0A, no load
2.8
5.1
VSDB = GND, no load
1.4
VCC = 5V
Po
Output power (8Ω)
VCC = 3V
tWU
THD+N
PSRR
Wake-up time (Note 1)
Total harmonic distortion +
noise (Note 1)
Power supply rejection ratio
(Note 1)
1
mA
μA
V
THD+N = 1%, f = 1kHz
1.20
THD+N = 10%, f = 1kHz
1.50
THD+N = 1%, f = 1kHz
0.418
THD+N = 10%, f = 1kHz
0.525
VCC = 5V, CBYPASS = 1μF
115
VCC = 3V, CBYPASS = 1μF
102
VCC = 5V, PO = 0.5Wrms, f = 1kHz
0.23
VCC = 3V, Po = 0.3Wrms, f = 1kHz
VCC = 5V
f = 217Hz
VRipple p-p = 200mV
f = 1kHz
Input grounded
VCC = 3.6V, 4.2V
f = 217Hz
VRipple p-p = 200mV
f = 1kHz
Input grounded
0.15
W
ms
%
61
65
62
dB
66
Note 1: Guaranteed by design.
Integrated Silicon Solution, Inc. – www.issi.com
Rev. C, 06/24/2014
5
IS31AP4990D
TYPICAL PERFORMANCE CHARACTERISTIC
20
20
RL = 8Ω
f = 1kHz
10
5
VCC = 5V
THD+N(%)
THD+N(%)
RL = 8Ω
10
2
VCC = 3V
1
2
1
VCC = 5V
PO = 800mW
0.2
0.1
0.5
VCC = 3V
PO = 250mW
0.05
0.2
0.02
0.1
10m
20m
100m
50m
500m
200m
0.01
2
1
20
50
100
200
THD+N vs. Output Power
5k
10k 20k
5k
10k
THD+N vs. Frequency
Figure 4
VCC = 3.6V, 4.2V
RL = 8Ω
Input Grounded
VCC = 5V
RL = 8Ω
-20
-40
PSRR(dB)
-40
PSRR(dB)
2k
+0
+0
-20
1k
Frequency(Hz)
Output Power(W)
Figure 3
500
-60
-80
Input Grounded
-60
-80
Input Float
-100
-100
-120
20
50
100
200
500
1k
2k
5k
-120
20
10k 20k
50
100
PSRR vs. Frequency
Figure 6
VCC = 3V, 5V
RL = 8Ω
2k
20k
PSRR vs. Frequency
RL = 8Ω
f = 1kHz
1.8
1.6
Output Power(W)
Output Voltage(V)
1k
2.0
100u
70u
500
Frequency(Hz)
Frequency(Hz)
Figure 5
200
50u
30u
20u
THD+N = 10%
1.4
1.2
1.0
0.8
THD+N = 1%
0.6
0.4
0.2
10u
0
20
50
100
200
500
1k
2k
5k
10k
20k
3
3.5
Noise Floor
Integrated Silicon Solution, Inc. – www.issi.com
Rev. C, 06/24/2014
4.5
5
5.5
Power Supply(V)
Frequency(Hz)
Figure 7
4
Figure 8
Output Power vs. Power Supply
6
IS31AP4990D
70
VCC = 5V
RL = 8Ω
f = 1kHz
THD+N<1%
Efficiency(%）
60
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
Output Power(W)
Figure 9
Efficiency vs. Output Power
Integrated Silicon Solution, Inc. – www.issi.com
Rev. C, 06/24/2014
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IS31AP4990D
APPLICATION INFORMATION
BTL CONFIGURATION PRINCIPLE
The IS31AP4990D is a monolithic power amplifier with
a BTL output type. BTL (bridge tied load) means that
each end of the load is connected to two single-ended
output amplifiers. Thus, we have:
Single-ended output 1 = VOUT+ = VOUT (V)
Single ended output 2 = VOUT- = -VOUT (V)
and VOUT+ - VOUT- = 2VOUT (V)
The output power is:
POUT 
(2VOUT RMS ) 2
RL
For the same power supply voltage, the output power
in BTL configuration is four times higher than the
output power in single ended configuration.
GAIN IN A TYPICAL APPLICATION SCHEMATIC
The typical application schematic is shown in Figure 1
on page 1.
In the flat region (no CIN effect), the output voltage of
the first stage is (in Volts):
VOUT   (VIN )
RF
RIN
For the second stage: VOUT+ = -VOUT- (V)
The differential output voltage is (in Volts):
VOUT   VOUT   2VIN
RF
RIN
The differential gain, Gv, in shourt, is given by:
Gv 
VOUT   VOUT 
R
2 F
VIN
RIN
VOUT+ is in phase with VIN and VOUT- is phased 180°
with VIN. This means that the positive terminal of the
loudspeaker should be connected to VOUT+ and the
negative to VOUT-.
LOW AND HIGH FREQUENCY RESPONSE
In the low frequency region, CIN starts to have an effect.
CIN forms with RIN a high-pass filter with a -3dB cut-off
frequency. fCL is in Hz.
f CL 
1
2RIN C IN
In the high frequency region, you can limit the
bandwidth by adding a capacitor (CF) in parallel with RF.
It forms a low-pass filter with a -3dB cut-off frequency.
fCH is in Hz.
Integrated Silicon Solution, Inc. – www.issi.com
Rev. C, 06/24/2014
f CH 
1
2RF C F
DECOUPLING OF THE CIRCUIT
Two capacitors are needed to correctly bypass the
IS31AP4990D: a power supply bypass capacitor CS
and a bias voltage bypass capacitor CBYPASS.
CS has particular influence on the THD+N in the high
frequency region (above 7kHz) and an indirect
influence on power supply disturbances. With a value
for CS of 1μF, you can expect THD+N levels similar to
those shown in the datasheet.
In the high frequency region, if CS is lower than 1μF, it
increases THD+N and disturbances on the power
supply rail are less filtered.
On the other hand, if CS is higher than 1μF, those
disturbances on the power supply rail are more filtered.
CBYPASS has an influence on THD+N at lower
frequencies, but its function is critical to the final result
of PSRR (with input grounded and in the lower
frequency region).
If CBYPASS is lower than 1μF, THD+N increases at lower
frequencies and PSRR worsens.
If CBYPASS is higher than 1μF, the benefit on THD+N at
lower frequencies is small, but the benefit to PSRR is
substantial.
Note that CIN has a non-negligible effect on PSRR at
lower frequencies. The lower the value of CIN, the
higher the PSRR is.
WAKE-UP TIME (tWU)
When the SDB pin is released to put the device ON,
the bypass capacitor CBYPASS will not be charged
immediately. As CBYPASS is directly linked to the bias of
the amplifier, the bias will not work properly until the
CBYPASS voltage is correct. The time to reach this
voltage is called wake-up time or tWU and specified in
the electrical characteristics table with CBYPASS = 1μF.
POP PERFORMANCE
Pop performance is intimately linked with the size of
the input capacitor CIN and the bias voltage bypass
capacitor CBYPASS.
The size of CIN is dependent on the lower cut-off
frequency and PSRR values requested. The size of
CBYPASS is dependent on THD+N and PSRR values
requested at lower frequencies.
Moreover, CBYPASS determines the speed with which
the amplifier turns ON.
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IS31AP4990D
CLASSIFICATION REFLOW PROFILES
Profile Feature
Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
150°C
200°C
60-120 seconds
Average ramp-up rate (Tsmax to Tp)
3°C/second max.
Liquidous temperature (TL)
Time at liquidous (tL)
217°C
60-150 seconds
Peak package body temperature (Tp)*
Max 260°C
Time (tp)** within 5°C of the specified
classification temperature (Tc)
Max 30 seconds
Average ramp-down rate (Tp to Tsmax)
6°C/second max.
Time 25°C to peak temperature
8 minutes max.
Figure 10
Classification Profile
Integrated Silicon Solution, Inc. – www.issi.com
Rev. C, 06/24/2014
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IS31AP4990D
PACKAGING INFORMATION
UTQFN-9L
Note: All dimensions in millimeters unless otherwise stated.
Integrated Silicon Solution, Inc. – www.issi.com
Rev. C, 06/24/2014
10