Infineon AppNote AN262 GPS GNSS Front End Module MMIC

B G M10 32 N7
Fron t - End Modul e f or Glo bal Na vig atio n
Sat ellite S yste ms ( G NS S) A p plic atio n
Using H ig h - Q In duc tors
Applic atio n N ote A N 262
Revision: Rev. 1.2
2012-05-05
RF and P r otecti on D evic es
Edition 2012-05-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Application Note AN262
Revision History: 2012-05-05
Previous Revision: Rev. 1.1, 2011-10-07
Page
11-12
Subjects (major changes since last revision)
GLONASS measurement results added
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COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™
of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.
HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™
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STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc.
MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS
Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of
Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems
Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc.
SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software
Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc.
TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™
of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™
of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last Trademarks Update 2011-11-11
Application Note AN262, Rev. 1.2
3 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
List of Content, Figures and Tables
Table of Content
1
BGM1032N7 GPS and GLONASS Front-End Module ..................................................................... 5
2
Introduction ........................................................................................................................................ 6
3
Description .......................................................................................................................................... 8
4
Application Circuit and Block Diagram ........................................................................................... 9
5
Measurement Results ...................................................................................................................... 11
6
Measured Graphs for GPS and GLONASS Bands ........................................................................ 13
7
Evaluation Board and layout Information ...................................................................................... 20
8
Authors .............................................................................................................................................. 21
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Figure 18
Figure 19
Figure 20
BGM1032N7 in TSNP-7-10 Package................................................................................................... 5
RF System Overview: Mobile Phone ................................................................................................... 6
GNSS system with integrated GNSS FEM BGM1032N7 for mobile/portable and personal navigation
devices ................................................................................................................................................. 7
Block Diagram of BGM1032N7 ............................................................................................................ 8
Schematic diagram of the BGM1032N7 (topview) application circuit .................................................. 9
Power Gain of BGM1032N7 for GPS and GLONASS bands ............................................................ 13
Noise Figure of BGM1032N7 for GPS and GLONASS bands ........................................................... 13
Wideband Insertion Power Gain including out-of-band attenuation of the BGM1032N7................... 14
Input Matching of BGM1032N7 for GPS and GLONASS bands ....................................................... 14
Output Matching of BGM1032N7 for GPS and GLONASS bands ..................................................... 15
Reverse Isolation of BGM1032N7 for GPS and GLONASS bands ................................................... 15
Input 1dB Compression Point of BGM1032N7 at supply voltage of 1.8V for GPS and GLONASS
bands .................................................................................................................................................. 16
Input 1dB Compression Point of BGM1032N7 at supply voltage of 2.8V for GPS and GLONASS
bands .................................................................................................................................................. 16
Carrier and intermodulation products of BGM1032N7 for GPS band at Vcc=1.8V ........................... 17
Carrier and intermodulation products of BGM1032N7 for GPS band at Vcc=2.8V ........................... 17
Stability Factor K of BGM1032N7 for GPS and GLONASS applications........................................... 18
Stability Factor µ1 of BGM1032N7 for GPS and GLONASS applications ......................................... 18
Stability Factor µ2 of BGM1032N7 for GPS and GLONASS applications ......................................... 19
Picture of Evaluation Board (detailed view) M110416 V3.0 ............................................................... 20
PCB Layer Information ....................................................................................................................... 20
List of Tables
Table 1
Table 2
Table 3
Table 4
Pin Assignment of BGM1032N7 .......................................................................................................... 9
Bill-of-Materials................................................................................................................................... 10
Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V .............................................. 11
Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V .............................................. 12
Application Note AN262, Rev. 1.2
4 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
BGM1032N7 GPS and GLONASS Front-End Module
1
BGM1032N7 GPS and GLONASS Front-End Module
1.1
Features











1.2
Operating frequency: 1575.42 MHz and 1598.061605.38 MHz
High Gain: 14.8 dB
Low Noise Figure (GPS): 1.65 dB
Low current consumption: 4.0 mA
Out-of-band rejection in cellular bands: > 43dBc
Input compression point in cellular bands: 30 dBm
Supply voltage: 1.5 V to 3.6 V
Tiny TSNP-7-10 leadless package
3
(2.3x1.7x0.73mm )
RF output internally matched to 50 Ω
IEC61000-4-2 contact discharge of RF input pin
in the application circuit: +/- 6 kV
RoHS compliant package (Pb-free)
Figure 1
BGM1032N7 in TSNP-7-10
Package
Applications
- GPS (Global Positioning System) working in the L1 band at 1575.42 MHz
- GLONASS (Globalnaya Navigatsionnaya Sputnikovaya Sistema) working in the L1 band from 1598.06 MHz to
1605.38 MHz
Application Note AN262, Rev. 1.2
5 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Introduction
2
Introduction
Global Navigation Satellite System or GNSS receiver, as we know, works on the reception of location based
information from satellite signals. There are several standards worldwide like GPS, GLONASS, Galileo and
COMPASS Bei Du. However, the power levels of the satellite signals received, can be lower than -130 dBm.
This poses a challenge on the sensitivity of the GNSS receiver. Along with this, the ever growing disturbing or
jamming signals in the adjacent cellular bands makes the design of the receiver front-end even more difficult.
The rapidly growing market for GNSS systems is driving the design of advanced and high-performance GNSS
receivers. A simple overview of the GNSS RF system in a mobile phone or other handheld devices is shown in
Figure 2.
Mobile Phone / Handheld device
Satellite GNSS
signal
Tranceiver module
GSM800/GSM900/
DCS/PCS1800/
UMTS/
WLAN
GNSS
Receiver IC
Figure 2
Int.
LNA
Tx Signal
GNSS Signal < -130dBm
GNSS RF
Front-end
module
ESD
protection
Blocking Signal
RF System Overview: Mobile Phone
GNSS receivers for mobile or handheld applications are always under the threat of high power cellular signals.
Due to the coexistence of GNSS and Cellular services, there is a strong coupling of the DCS/PCS and Cellular
signals to the GNSS receiver. The performance of a standard integrated GNSS receiver chip cannot meet the
specifications required for the present systems. An external RF front-end is essential to achieve this required
performance. The most important prerequisites for the front-end of a GNSS receiver are low noise figure and
sufficient amplification of the desired signal together with high attenuation of the jamming signals.
Application Note AN262, Rev. 1.2
6 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Introduction
2.1
Systems overview of a GNSS receiver
Several configurations can be adopted for a GNSS receiver chain. In all configurations, as mentioned earlier, a
RF front-end like BGM1032N7 is placed between the antenna and the GNSS receiver chip. Mobile/portable
devices as well as personal navigation devices request decreasing form factor used by the implementation of
the GNSS function in the devices. BGM1032N7 supports the designers to minimize the area in the front-end.
Such a configuration is shown in Figure 3. The BGM1032N7 can also be used for the active antenna module.
BGM1032N7
Embedded ANT
BPF
GNSS
Receiver
IC
Ext.
Notch
Filter
Figure 3
LNA
GNSS system with integrated GNSS FEM BGM1032N7 for mobile/portable and personal
navigation devices
Application Note AN262, Rev. 1.2
7 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Description
3
Description
The BGM1032N7 is a combination of a low-insertion-loss pre-filter with Infineon’s high performance low noise
amplifier (LNA) for Global Positioning System (GPS) and Globalnaya Navigatsionnaya Sputnikovaya Sistema
(GLONASS) applications. Both, GPS and Glonass frequency bands, can be used at the same time. Through the
low insertion loss of the filter, the BGM1032N7 provides 14.8 dB gain, 1.65 dB noise figure and high linearity
performance. In addition BGM1032N7 provides very high out-of-band attenuation in conjunction with a high
input compression point. . It can withstand IEC61000-4-2 ESD contact discharge at the RF input as high as 6 kV
in the application circuit shown in Figure 5. Its current consumption is as low as 4.0 mA. It operates over the 1.5
V to 3.6 V supply voltage range. The external notch filter is introduced to provide higher rejection for 787MHz.
Figure 4
Block Diagram of BGM1032N7
Application Note AN262, Rev. 1.2
8 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Application Circuit and Block Diagram
4
Application Circuit and Block Diagram
The BGM1032N7 is internally matched at the output to 50 Ohm. The LNA bias circuitry is also integrated on
chip. Two SMDs (one capacitor and one inductor) are used to design the notch filter for 787MHz optimization.
Other than those, only three external components are required in the application.
The application schematic is shown in Figure 5 and the function of the external passives is listed in Table 2.
4.1
Application Schematic
Figure 5
Schematic diagram of the BGM1032N7 (topview) application circuit
Table 1
Pin Assignment of BGM1032N7
Pin No.
Symbol
Function
1
VCC
Power Supply
2
3
PON
RFIN
Power ON/OFF
RF Input
4
SO
Pre-Filter Output
5
AI
LNA Input
6
RFOUT
RF Output
7
GND
DC ground
Application Note AN262, Rev. 1.2
9 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Table 2
Bill-of-Materials
Symbol
Value
Unit
Size
C1
0.1
µF
0402
Various
Supply filtering
C3
6
pF
0402
787MHz Optimization
L1
6.2
nH
0402
Murata GRM
series
Murata LQW15A
Matching / ESD Inductor
L2
8.2
nH
0402
Murata LQW15A
Input Matching
L3
6.8
nH
0402
Murata LQW15A
787MHz Optimization
Q1
BGM1032N7
TSNP-7-10
Infineon
GPS/GLONASS FEM
Application Note AN262, Rev. 1.2
Manufacturer
10 / 22
Comment
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Measurement Results
5
Measurement Results
Measurement results of the BGM1032N7 are presented in this section. The measurements are performed on
the Infineon application board at room temperature. The performances of the BGM1032N7 are here provided for
the voltage of 1.8V (Table 3) and 2.8V (Table 4). The data exclude PCB and SMA connector losses, unless
otherwise mentioned.
Table 3
Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V
Parameter
Symbol
Value
Unit
DC Voltage
Vcc
1.8
V
DC Current
Icc
4.1
mA
Navigation System
Sys
GPS
GLONASS
Frequency Range
Freq
1575.42
1598-1606
MHz
Gain
G
15.0
14.6
dB
Noise Figure
NF
1.67
1.96
dB
RLin
16.3
23.2
dB
RLout
23.4
17.7
dB
IRev
21.2
21.3
dB
Input P1dB
IP1dB
-8.5
-8.0
dBm
Output P1dB
OP1dB
5.5
5.6
dBm
IIP3
-6.9
-6.5
dBm
Input Return Loss
Output Return Loss
Reverse Isolation
Input IP3 In-band
Comment/Test Condition
PCB and SMA connectors of 0.1 dB losses
substracted
fgps = 1575.42 MHz
f GLONASS = 1605 MHz
f1gps = 1575.42 MHz, f2gps = 1576.42 MHz
Output IP3
OIP3
In-band
8.1
8.1
dBm f1GLONASS =1602 MHz, f2GLONASS =1603 MHz
P1IN = P2IN = -30 dBm
Rejection 750MHz
Rejection 900MHz
1
1
Rej750M
78.6
dBc
f = 750 MHz
Rej900M
51.0
dBc
f = 806 MHz - 928 MHz
1
Rej1800M
40.3
dBc
f = 1710 MHz - 1980 MHz
1
Rej2400M
56.3
dBc
f = 2400 MHz - 2500 MHz
Input P1dB
IP1dB900M
32.0
dBm f = 900 MHz
Input P1dB
IP1dB1710M
30.0
dBm f = 1710 MHz
H2 – input
referred
-88.1
dBm
IIP3OOB
65.5
dBm
k
>1
Rejection 1800MHz
Rejection 2400MHz
LTE band-13 2
Harmonic
Input IP3
out-of-band
Stability
1
nd
--
fIN = 787.76 MHz
PIN = +15 dBm
f1 = 1712.7 MHz, f2 = 1850 MHz
P1IN = +10 dBm, P2IN = +10 dBm
Unconditionnally Stable from 0 to 10GHz
Rejection is defined as following: [Gain at 1575.42 MHz] – [Attenuation@stopband frequency
Application Note AN262, Rev. 1.2
11 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Measurement Results
Table 4
Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V
Parameter
Symbol
Value
Unit
DC Voltage
Vcc
2.8
V
DC Current
Icc
4.2
mA
Navigation System
Sys
GPS
GLONASS
Frequency Range
Freq
1575.42
1598-1606
MHz
Gain
G
15.0
14.6
dB
Noise Figure
NF
1.7
2.0
dB
RLin
17.1
26.3
dB
RLout
20.5
17.7
dB
IRev
21.6
21.7
dB
Input P1dB
IP1dB
-7.7
-7.0
dBm
Output P1dB
OP1dB
6.3
6.6
dBm
IIP3
-6.6
-6.2
dBm
Input Return Loss
Output Return Loss
Reverse Isolation
Input IP3 In-band
Comment/Test Condition
PCB and SMA connectors of 0.1 dB losses
substracted
fgps = 1575.42 MHz
f GLONASS = 1605 MHz
f1gps = 1575.42 MHz, f2gps = 1576.42 MHz
Output IP3
OIP3
In-band
8.4
8.4
dBm f1GLONASS =1602 MHz, f2GLONASS =1603 MHz
Input power= -30 dBm
1
Rej750M
78.6
dBc
f = 750 MHz
1
Rej900M
51.0
dBc
f = 806 MHz - 928 MHz
1
Rej1800M
40.3
dBc
f = 1710 MHz - 1980 MHz
1
Rej2400M
56.3
dBc
f = 2400 MHz - 2500 MHz
Input P1dB
IP1dB900M
32.0
dBm f = 900 MHz
Input P1dB
IP1dB1710M
30.5
dBm f = 1710 MHz
H2 – input
referred
-88.3
dBm
IIP3OOB
66.0
dBm
k
>1
--
Rejection 750MHz
Rejection 900MHz
Rejection 1800MHz
Rejection 2400MHz
LTE band-13 2
Harmonic
Input IP3
out-of-band
Stability
1
nd
fIN = 787.76 MHz
PIN = +15 dBm
f1 = 1712.7 MHz, f2 = 1850 MHz
P1IN = +10 dBm, P2IN = +10 dBm
Unconditionnally Stable from 0 to 10GHz
Rejection is defined as following: [Gain at 1575.42 MHz] – [Attenuation@stopband frequency
Application Note AN262, Rev. 1.2
12 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Measured Graphs for GPS and GLONASS Bands
6
Measured Graphs for GPS and GLONASS Bands
Figure 6
Power Gain of BGM1032N7 for GPS and GLONASS bands
Figure 7
Noise Figure of BGM1032N7 for GPS and GLONASS bands
Application Note AN262, Rev. 1.2
13 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Measured Graphs for GPS and GLONASS Bands
Figure 8
Wideband Insertion Power Gain including out-of-band attenuation of the BGM1032N7
Figure 9
Input Matching of BGM1032N7 for GPS and GLONASS bands
Application Note AN262, Rev. 1.2
14 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Measured Graphs for GPS and GLONASS Bands
Figure 10
Output Matching of BGM1032N7 for GPS and GLONASS bands
Figure 11
Reverse Isolation of BGM1032N7 for GPS and GLONASS bands
Application Note AN262, Rev. 1.2
15 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Measured Graphs for GPS and GLONASS Bands
Figure 12
Input 1dB Compression Point of BGM1032N7 at supply voltage of 1.8V for GPS and
GLONASS bands
Figure 13
Input 1dB Compression Point of BGM1032N7 at supply voltage of 2.8V for GPS and
GLONASS bands
Application Note AN262, Rev. 1.2
16 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Measured Graphs for GPS and GLONASS Bands
In Band OIP3 for GPS
0
BGM1032_HQ_1.8V
-10
Power Level (dBm)
-20
1575.42 MHz
-15.19
-30
1576.42 MHz
-15.44
-40
1577.42 MHz
-61.7
-50
-60
-70
-80
-90
-100
-110
1573.5
Figure 14
1574.5
1575.5
1576.5
Frequency (MHz)
1577.5 1578
Carrier and intermodulation products of BGM1032N7 for GPS band at Vcc=1.8V
In Band OIP3 for GPS
0
-10
Power Level (dBm)
-20
BGM1032_HQ_2.8V
1575.42 MHz
-15.09
1576.42 MHz
-15.44
-30
-40
1577.42 MHz
-61.97
-50
-60
-70
-80
-90
-100
-110
1573.5
Figure 15
1574.5
1575.5
1576.5
Frequency (MHz)
1577.5 1578
Carrier and intermodulation products of BGM1032N7 for GPS band at Vcc=2.8V
Application Note AN262, Rev. 1.2
17 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Measured Graphs for GPS and GLONASS Bands
Figure 16
Stability Factor K of BGM1032N7 for GPS and GLONASS applications
Figure 17
Stability Factor µ1 of BGM1032N7 for GPS and GLONASS applications
Application Note AN262, Rev. 1.2
18 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Measured Graphs for GPS and GLONASS Bands
Figure 18
Stability Factor µ2 of BGM1032N7 for GPS and GLONASS applications
Application Note AN262, Rev. 1.2
19 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Evaluation Board and layout Information
7
Evaluation Board and layout Information
In this application note, the following PCB is used:
PCB Marking: M110416 V3.0
PCB material: FR4
r of PCB material: 4.3
Notch
Filter
Figure 19
Picture of Evaluation Board (detailed view) M110416 V3.0
Vias
FR4, 0.2mm
Copper
35µm
Figure 20
FR4, 0.8mm
PCB Layer Information
Application Note AN262, Rev. 1.2
20 / 22
2012-05-05
BGM1032N7
FEM for GPS and GLONASS Applications using High-Q Inductors
Authors
8
Authors
Shamsuddin Ahmed, Application Engineer of Business Unit “RF and Protection Devices”
Jagjit Singh Bal, Application Engineer of Business Unit “RF and Protection Devices”
Dr. Chih-I Lin, Senior Staff Engineer of Business Unit “RF and Protection Devices”
Application Note AN262, Rev. 1.2
21 / 22
2012-05-05
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
AN262