MD3250 MD3250A MD3251 MD3251A DUAL PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR MD3250 and MD3251 Series types are dual PNP silicon transistors, manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case, designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Emitter Voltage SYMBOL VCEO 40 UNITS V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 50 mA Power Dissipation (One Die) PD 575 mW Power Dissipation (Both Die) PD 625 mW Power Dissipation (One Die), TC=25°C PD 1.8 W Power Dissipation (Both Die), TC=25°C PD 2.5 W TJ, Tstg -65 to +200 °C MAX 10 UNITS nA 10 μA 10 nA Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=40V ICBO IEBO VCB=40V, TA=150°C VBE=3.0V BVCEO IC=10mA IC=10μA BVCBO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE hFE hFE 40 V 50 V IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 5.0 V IC=10mA, IC=50mA, 0.60 IB=1.0mA IB=5.0mA 0.25 V 0.90 V 1.2 V VCE=5.0V, IC=10μA (MD3250,A) VCE=5.0V, IC=10μA (MD3251,A) VCE=5.0V, IC=100μA (MD3250,A) 25 50 150 VCE=5.0V, IC=100μA (MD3251,A) VCE=5.0V, IC=1.0mA (MD3250,A) VCE=5.0V, IC=1.0mA (MD3251,A) 80 300 50 150 100 300 VCE=5.0V, VCE=5.0V, IC=10mA (MD3250,A) IC=10mA (MD3251,A) V 0.50 50 50 100 R0 (9-June 2009) Central TM MD3250 MD3250A MD3251 MD3251A Semiconductor Corp. DUAL PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX hFE VCE=5.0V, IC=50mA (MD3250,A) 15 hFE fT fT VCE=5.0V, IC=50mA (MD3251,A) VCE=20V, IC=10mA, f=100MHz (MD3250,A) Cob VCE=20V, IC=10mA, f=100MHz (MD3251,A) VCB=5.0V, IE=0, f=100kHz Cib VBE=1.0V, IC=0, f=100kHz 30 200 MHz 250 MHz 6.0 pF 8.0 pF UNITS MATCHING CHARACTERISTICS: SYMBOL TEST CONDITIONS hFE1/hFE2 (Note 1) VCE=5.0V, IC=100μA MIN 0.90 MAX 1.0 hFE1/hFE2 (Note 1) 0.90 1.0 IVBE1-VBE2I IVBE1-VBE2I IVBE1-VBE2I VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10μA UNITS VCE=5.0V, IC=100μA VCE=5.0V, IC=10mA 5.0 mV 3.0 mV 5.0 mV 1) The lowest hFE reading is taken as hFE1. TO-78 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R0 (9-June 2009)