J210, J211, J212 SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER TO-92 TO-92 FEATURES HIGH GAIN gfs=7000µmho MINIMUM (J211, J212) HIGH INPUT IMPEDENCE LOW CAPACITANCE Plastic D IGSS= 100pA MAXIMUM G CISS= 5pF TYPICAL S ABSOLUTE MAXIMUM RATINGS G D S @ 25 °C (unless otherwise stated) Gate-Drain or Gate-Source Voltage -25V Gate Current Total Device Dissipation @25°C Ambient (Derate 3.27 mW/°C) Operating Temperature Range 10mA TO-92 SOT-23 TOP VIEW J210, J211, J212 TOP VIEW SSTJ210, SSTJ211, SSTJ212 360mW -55 to +150 °C ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTICS SSTJ210 SSTJ211 SSTJ212 UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX IGSS Gate Reverse Current --- -100 --- -100 --- -100 pA VGS(off) Gate-Source Cutoff Voltage -1 -- -3 -2.5 -- -4.5 -4 -- -6 BVGSS Gate-Source Breakdown Voltage -25 -- -- -25 -- -- -25 -- -- V CONDITIONS VDS = 0, VGS = -15V (NOTE 1) VDS = 15V, ID = 1nA VDS = 0, IG = -1µA IDSS Drain Saturation Current 2 -- 15 7 -- 20 15 -- 40 mA VDS = 15V, VGS=0 (NOTE 2) IG Gate Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance -- -10 -- -- -10 -- -- -10 -- pA VDS = 10V, ID=1mA (NOTE 1) 4,000 -- -- 12,000 -- -- 150 -- -- 200 -- -- 200 -- 4 -- -- 4 -- -- 4 -- gfs gos CISS Crss en Equivalent Short-Circuit Input Noise Voltage 12,000 6,000 -- 12,000 7,000 µmho pF - 1 -- -- 1 -- -- 1 -- - 10 -- -- 10 -- -- 10 -- nV√Hz f=1kHz VDS = 15V, VGS=0 f=1MHz f=1kHz NOTE 1. Approximately doubles for every 10°C increase in TA. 2. Pulse test duration = 2ms. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201113 5/20/2014 Rev A7 ECN# JS210_211_212