LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G ●APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance 3 Improved Shoot-Through FOM 2)We declare that the material of product compliant with RoHS 1 requirements and Halogen Free 2 SOT– 23 (TO–236AB) ●FEATURES VDS= 20V RDS(ON), [email protected], [email protected] = 60m Ω RDS(ON), [email protected], [email protected] = 115m Ω 3 D ●DEVICE MARKING AND ORDERING INFORMATION Device LN2302LT1G LN2302LT3G Marking N02 N02 G Shipping 3000/Tape&Reel 10000/Tape&Reel 1 2 S ●MAXIMUM RATINGS(Ta = 25℃) Limits Unit 20 V ±8 V 2.3 A 8 A TA = 25°C 0.9 PD W Maximum Power Dissipation TA = 75°C 0.57 Operating and Storage Temperature Range TJ, Tstg –55 to +150 °C Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Pulsed Drain Current (Note1) Junction to Ambient Thermal Resistance(PCB mounted)(Note 2) Symbol VDSS VGS ID IDM RθJA 145 °C/W 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board July , 2015 Rev .B 1/5 LESHAN RADIO COMPANY, LTD. LN2302LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) STATIC Parameter Drain−to−Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current Drain−to−Source On Resistance Forward Diode Voltage Forward Transconductance DYNAMIC(Note 3) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Gate Charge Gate−to−Drain Charge Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Symbol V(BR)DSS VGS(TH) IDSS IGSS RDS(on) VSD gFS Ciss Coss Crss QG QGS QGD td(on) tr td(off) tf Min. 20 0.6 – – – – Typ. – 0.95 – – 40 50 – 6.5 – – – – – – – – – – 427.12 80.56 57.00 3.69 0.70 1.06 6.16 7.56 16.61 4.07 Max. Unit Conditions – V VGS = 0 V, ID = 250 μA 1.2 V VGS = VDS, ID = 250 μA -1 μA VDS=9.6V, VGS=0V ±100 nA VDS = 0 V, VGS = ±8 V 60 m Ω VGS = 4.5 V, ID =2.8 A 115 m Ω VGS = 2.5 V, ID = 2 A 1.2 V VGS = 0 V, ISD = -1.6A – S VDS = 5.0 V, ID = 4 A – – – – – – – – – – pF VGS = 0 V, f = 1.0 MHz, VDS= 6 V nC VGS =4.5 V,VDS = 6 V ID = 2.8 A ns VDD = 6V, RL = 6 Ω ΙD = 1Α, VGEN = 4.5V RG = 6 Ω 3.Pulse test: pulse width ≦ 300us, duty cycle≦ 2% July , 2015 Rev .B 2/5 LESHAN RADIO COMPANY, LTD. LN2302LT1G ELECTRICAL CHARACTERISTIC CURVES 16 14 VDS=5V 14 12 12 10 ID (A) ID (A) 10 8 8 6 6 4 4 2 2 0 0 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.5 VGS (V) VDS(V) VGS=1.5V FIG.1 Transfer Characteristics VGS=2.0V VGS=2.5V FIG.2 On-Region Characteristics 0.50 0.5 0.45 ID=3.5A 0.40 0.4 0.30 RDSon (Ω) RDSon (Ω) 0.35 0.25 0.20 0.3 0.2 0.15 0.10 0.1 0.05 0.00 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 ID (A) VGS=1.8V VGS=2.5V FIG.3 On-Resistance vs. Drain Current July , 2015 0.0 0 1 2 3 4 5 6 7 8 VGS (V) VGS=4.5V FIG.4 On-Resistance vs. Gate-to-Source Voltage Rev .B 3/5 LESHAN RADIO COMPANY, LTD. LN2302LT1G ELECTRICAL CHARACTERISTIC CURVES 0.16 1.2 ID=250uA 1.0 0.14 VGSth (V) RDSon (Ω) 0.8 0.12 0.10 0.6 0.4 0.08 0.2 0.06 0.0 -50 -25 0 25 50 75 100 125 150 Ta (℃) FIG.7 On-Resistance vs. Junction Temperature July , 2015 -50 -25 0 25 50 75 100 125 150 Ta (℃) FIG.8 VTH vs. Junction Temperature Rev .B 4/5 LESHAN RADIO COMPANY, LTD. LN2302LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 July , 2015 inches mm Rev .B 5/5