LN2302BLT1G

LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON)≦85mΩ@VGS=4.5V
LN2302BLT1G
S-LN2302BLT1G
● RDS(ON)≦115mΩ@VGS=2.5V
● RDS(ON)≦135mΩ@VGS=1.8V
● Super high density cell design for extremely low RDS(ON)
3
● Exceptional on-resistance and maximum DC current
capability
1
● S- Prefix for Automotive and Other Applications Requiring
2
SOT– 23
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
3
APPLICATIONS
● Power Management in Notebook
● Portable Equipment
● Load Switch
● DSC
1
Ordering Information
Device
Shipping
Marking
LN2302BLT1G
S-LN2302BLT1G
LN2302BLT3G
S-LN2302BLT3G
02B
3000/Tape& Reel
02B
10000/Tape& Reel
2
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain
TA=25℃
Current(tJ=150℃)
TA=70℃
Pulsed Drain Current
Maximum Body-Diode Continuous Current
2.8
ID
IDM
10
IS
1.6
TA=25℃
Maximum Power Dissipation
TA=70℃
Operating Junction Temperature
Maximum Junction-to-Ambient
Thermal Resistance-Junction to Case
A
2.2
A
1.25
PD
W
0.8
TJ
℃
150
T≦10 sec
77
Steady State
105
RthJA
RθJC
℃/W
70
*The device mounted on 1in2 FR4 board with 2 oz copper
May,2015
℃/W
Rev .A 1/5
LESHAN RADIO COMPANY, LTD.
LN2302BLT1G , S-LN2302BLT1G
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limit
Min
Typ
Max
Unit
STATIC PARAMETERS
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
20
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
0.5
IGSS
Gate-Body Leakage Current
VDS=0V, VGS=±8V
±100
VDS=20V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
0.75
On-State Drain Current
RDS(ON)
VSD
a
Drain-Source On-Resistance
Diode Forward Voltage
nA
10
VDS≧5V, VGS= 4.5V
6
VDS≧5V, VGS= 2.5V
4
A
VGS=4.5V, ID= 2.8A
55
85
VGS=2.5V, ID= 2.5A
65
115
VGS=1.8V, ID= 2.2A
80
130
0.75
1.2
IS=1A, VGS=0V
V
μA
VDS=20V, VGS=0V
TJ=55℃
ID(ON)
1.0
mΩ
V
DYNAMIC PARAMETERS
Qg
Total Gate Charge
9
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
3
Ciss
Input Capacitance
450
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
22
td(on)
Turn-On Delay Time
9
tr
Rise Time
VDD=10V, RL =10Ω
23
td(off)
Turn-Off Delay Time
VGEN=4.5Ω, RG=6Ω
38
tf
Fall Time
VDS=10V, VGS=4.5V, ID=2.8A
VDS=10V, VGS=0V, f=1MHZ
nC
2.2
pF
72
ns
3
Notes:
a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%
May,2015
Rev .A 2/5
LESHAN RADIO COMPANY, LTD.
Typical Characteristics (TJ =25℃ Noted)
May,2015
LN2302BLT1G , S-LN2302BLT1G
Rev .A 3/5
LESHAN RADIO COMPANY, LTD.
Typical Characteristics (TJ =25℃ Noted)
May,2015
LN2302BLT1G , S-LN2302BLT1G
Rev .A 4/5
LESHAN RADIO COMPANY, LTD.
LN2302BLT1G , S-LN2302BLT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
May,2015
inches
mm
Rev .A 5/5