LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP3415ELT1G S-LP3415ELT1G VDS= -20V RDS(ON), [email protected], Ids@-4A = 60 mΩ RDS(ON), [email protected], Ids@-4A = 75 mΩ RDS(ON), [email protected], Ids@-2A = 85 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 we declare that the material of product SOT– 23 (TO–236AB) compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ▼ Simple Drive Requirement ▼ Small Package Outline 1 ▼ Surface Mount Device 2 Ordering Information Device Shipping Marking LP3415ELT1G S-LP3415ELT1G LP3415ELT3G S-LP3415ELT3G P15 3000/Tape& Reel P15 10000/Tape& Reel Maximum Ratings and Thermal Characteristics (TA= 25oC unless otherwise noted) Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -4 Pulsed Drain Current 1) IDM -30 Parameter o Maximum Power Dissipation TA = 25 C PD o TA = 75 C V A 1 W 0.6 Operating Junction and Storage Temperature Range Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) Unit 2) TJ, Tstg -55 to 150 RqJC 100 RqJA 150 o o C C/W Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Rev .O 1/3 LESHAN RADIO COMPANY, LTD. LP3415ELT1G , S-LP3415ELT1G ELECTRICAL CHARACTERISTICS Parameter Test Condition Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250uA Drain-Source On-State Resistance RDS(on) VGS = -1.8V, ID = -2A 85.0 Drain-Source On-State Resistance RDS(on) VGS = -2.5V, ID = -4A 75.0 Drain-Source On-State Resistance RDS(on) VGS = -4.5V, ID = -4A 60.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA Zero Gate Voltage Drain Current IDSS Gate Body Leakage Gate Resistance -20 V -0.3 mΩ -1 V VDS = -16V, VGS = 0V -1 uA IGSS VGS = ± 8V, V DS = 0V ±10 uA Rg VDS = 0V, f = 1.0MHz Ω 6.5 3) Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =-10V, ID = -4A VGS = -4.5V VDD = -10V, RL = 2.5Ω ID = -1A, VGEN = -4.5V RG = 3Ω 4.59 5.97 2.14 2.78 2.51 3.26 965.2 1930.4 1604 3208 7716 15432 3452 6904 nC ns 36.45 VDS = -10V, VGS = 0V f = 1.0 MHz pF 128.57 15.17 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = -1A, VGS = 0V -2.2 A -1 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% 3. Guaranteed by design; not subject to production testing Rev .O 2/3 LESHAN RADIO COMPANY, LTD. LP3415ELT1G , S-LP3415ELT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev .O 3/3