LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET LP2305DSLT1G S-LP2305DSLT1G VDS= -8V RDS(ON), [email protected], [email protected] = 68 mΩ RDS(ON), [email protected], Ids@3A = 81 mΩ RDS(ON), [email protected], Ids@2A = 118 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 SOT– 23 (TO–236AB) Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product 3 compliance with RoHS requirements . D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. G 1 ▼ Simple Drive Requirement 2 S ▼ Small Package Outline ▼ Surface Mount Device Ordering Information Device Marking Shipping LP2305DSLT1G S-LP2305DSLT1G LP2305DSLT3G S-LP2305DSLT3G P5S 3000/Tape&Reel P5S 10000/Tape&Reel Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS -8 Gate-Source Voltage VGS ±8 ID -3.5 IDM -12 TJ, Tstg -55 to 150 Continuous Drain Current Pulsed Drain Current 1) Operating Junction and Storage Temperature Range Total Device Dissipation FR–5 Board TA = 25°C PD Unit V A 1100 o C mW Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Unit 110 ℃/W Rev .O 1/5 LESHAN RADIO COMPANY, LTD. LP2305DSLT1G , S-LP2305DSLT1G ELECTRICAL CHARACTERISTICS Parameter Static Symbol Test Condition Min Typ Max Unit 1) Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250uA Drain-Source On-State Resistance RDS(on) VGS = -4.5V, ID = -3.5A 47.0 68.0 Drain-Source On-State Resistance RDS(on) VGS = -2.5V, ID = -3A 55.0 81.0 Drain-Source On-State Resistance RDS(on) VGS = -1.8V, ID = -2A 67.0 118.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA -8 V -0.45 mΩ -0.8 V Zero Gate Voltage Drain Current IDSS VDS = -6.4V, VGS = 0V 1 uA Gate Body Leakage IGSS VGS = ± 8V, VDS = 0V ±100 nA Forward Transconductance gfs VDS = -5V, ID = -3.5A On-State Drain Current 2) ID(on) 8.5 VDS v –5 V, VGS = –4.5 V –6 VDS v –5 V, VGS = –2.5 V –3 S A Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage Dynamic IS VSD A –1.6 IS = -1.6A, VGS = 0V -1.2 V 3) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 210 td(on) 13 20 25 40 55 80 19 35 1245 V 4 V, V VGS = 0, 0 f = 1MHZ 1 MH VDS = –4 F pF 375 Switching 3) Turn-On Time tr td(off) Turn-Off Time VDD = –4 4 V V, RL = 4 W ID = –1.0 A, VGEN = –4.5 V RG = 6 W tf ns Note: 1. Static parameters are based on package level with recommended wire-bonding 2.For DESIGN AID ONLY, not subject to production testing. 3.Pulse test: PW v300 ms duty cycle v2%. Rev .O 2/5 LESHAN RADIO COMPANY, LTD. LP2305DSLT1G , S-LP2305DSLT1G Id DRAIN CURRENT(A) Id DRAIN CURRENT(A) TYPICAL ELECTRICAL CHARACTERISTICS Figure 1. Transfer Characteristics Figure 2. On–Region Characteristics Rds(on) ON-RESISTANCE Vds DRAIN-TO-SOURCE VOLTAGE(V) Rds(on) ON-RESISTANCE Vgs GATE-TO-SOURCE VOLTAGE(V) Id DRAIN CURRENT(A) Figure 3. On–Resistance versus Drain Current Vgs GATE-TO-SOURCE VOLTAGE(V) Figure 4. On-Resistance vs. Gate-to-Source Voltage Rev .O 3/5 LESHAN RADIO COMPANY, LTD. LP2305DSLT1G , S-LP2305DSLT1G TYPICAL ELECTRICAL CHARACTERISTICS Figure 5. Gate Charge Figure 6. Capacitance Figure 7. On-Resistance Vs.Junction Temperature Rev .O 4/5 LESHAN RADIO COMPANY, LTD. LP2305DSLT1G , S-LP2305DSLT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev .O 5/5