LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1) Power Management in Note book 2) Portable Equipment 3) Battery Powered System 4) Load Switch 5) DSC 6) We declare that the material of product are Halogen Free and compliant with RoHS requirements. LP2301ALT1G 3 1 2 SOT– 23 3 ●FEATURES 1) RDS(ON) ≦110m Ω @VGS=-4.5V 2) RDS(ON) ≦150m Ω @VGS=-2.5V 3) Super high density cell design for extremely low RDS(ON) G D 1 2 S ●DEVICE MARKING AND ORDERING INFORMATION Shipping Device Marking 3000/Tape&Reel LP2301ALT1G 01A 10000/Tape&Reel LP2301ALT3G 01A ●MAXIMUM RATINGS(Ta = 25℃) Parameter Symbol VDSS Drain−to−Source Voltage Gate−to−Source Voltage VGS Continuous Drain TA = 25°C ID Current (Tj=150℃)(Note1) TA = 70°C TA = 25°C PD Maximum Power Dissipation TA = 70°C Pulsed Drain Current Operating and Storage Temperature Range Thermal Resistance-Junction to Ambient(Note1) IDM Limits -20 ±8 -2 -1.6 0.7 0.45 Unit V V A A -10 A TJ, Tstg –55 to +150 RθJA 175 W °C °C/W 2 1.The device mounted on 1in FR4 board with 2 oz copper May,2015 Rev.A 1/5 LESHAN RADIO COMPANY, LTD. LP2301ALT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) Parameter Symbol Min. Drain−to−Source Breakdown Voltage V(BR)DSS -20 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current Typ. Max. Unit – – V VGS(TH) -0.4 -0.6 – V IDSS – – -1 μA IGSS – – ±100 nA – 90 110 mΩ – 110 150 mΩ -0.7 -1.4 V 480 46 10 7.2 2.2 1.2 50 30 40 11 – – – – – – – – – – Drain−to−Source On Resistance (Note2) RDS(on) Forward Diode Voltage VSD DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Gate Charge Gate−to−Drain Charge Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf – – – – – – – – – – pF nC ns Conditions VGS = 0 V, ID = -250 μA VGS = VDS, ID = -250 μA VDS=-20V, VGS=0V VDS = 0 V, VGS = ±8 V VGS = -4.5 V, ID =-2.8 A VGS = -2.5 V, ID = -2 A VGS = 0 V, ISD = -1A VGS = 0 V, f = 1.0 MHz, VDS= -15 V VGS =-4.5 V, VDS = -6 V ID = -2.8 A VDS=-6V, RL =6 Ω RGEN=6 Ω ,VGS=4.5V 2. Pulse Test: Pulse width≤300μs, duty cycle ≤2%. May,2015 Rev.A 2/5 LESHAN RADIO COMPANY, LTD. LP2301ALT1G ELECTRICAL CHARACTERISTIC CURVES 1.6 0.25 1.2 RDSon, On-Resistance (Ω) ON RESISTANCE NORMALLED 1.4 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 0.20 0.15 0.10 0.05 0.00 0.5 1 TEMPERATUE(Tj) VGS=2.5V ID=2A 1.5 2 ID, Drain Current (A) VGS=2.5V VGS=4.5V ID=2.8A FIG1 .ON RESISTANCE VS. TEMPERATURE 2.5 VGS=4.5V FIG2.On-Resistance vs. Drain Current 0.5 3.0 ID=-2.8A 0.4 RDSon, On-Resistance (Ω) IS, Source Current (A) 2.5 2.0 1.5 1.0 0.3 0.2 0.1 0.5 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) FIG3.IS vs VSD May,2015 1.2 0 1 2 3 4 5 VGS, Gate-to-Source Voltage (V) FIG4.On-Resistance vs. Gate-to-Source Voltage Rev.A 3/5 LESHAN RADIO COMPANY, LTD. LP2301ALT1G ELECTRICAL CHARACTERISTIC CURVES 0.4 ID, Drain Current (A) VGS(th)VARANCE(V) 0.3 0.2 0.1 0 -0.1 -0.2 -50 -25 0 25 50 75 Tj TEMPERATURE FIG5.THRESHOLD VOLTAGE May,2015 100 125 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS, Drain-to-Source Voltage(V) VGS=1.5V VGS=3V VGS=4.5V VGS=2V VGS=3.5V VGS=2.5V VGS=4V FIG6.On-Region Characteristics Rev.A 4/5 LESHAN RADIO COMPANY, LTD. LP2301ALT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 May,2015 inches mm Rev.A 5/5