LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON)≦85mΩ@VGS=4.5V LN2302ALT1G S-LN2302ALT1G ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V ● Super high density cell design for extremely low RDS(ON) 3 ● Exceptional on-resistance and maximum DC current capability 1 ● S- Prefix for Automotive and Other Applications Requiring 2 SOT– 23 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 APPLICATIONS ● Power Management in Notebook ● Portable Equipment ● Load Switch ● DSC 1 Ordering Information Device Shipping Marking LN2302ALT1G S-LN2302ALT1G LN2302ALT3G S-LN2302ALT3G 02A 3000/Tape& Reel 02A 10000/Tape& Reel 2 Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain TA=25℃ Current(tJ=150℃) TA=70℃ Pulsed Drain Current Maximum Body-Diode Continuous Current 2.8 ID IDM 10 IS 1.6 TA=25℃ Maximum Power Dissipation TA=70℃ Operating Junction Temperature Maximum Junction-to-Ambient Thermal Resistance-Junction to Case A 2.2 A 1.25 PD W 0.8 TJ ℃ 150 T≦10 sec 77 Steady State 105 RthJA RθJC ℃/W ℃/W 70 *The device mounted on 1in2 FR4 board with 2 oz copper Rev .O 1/5 LESHAN RADIO COMPANY, LTD. LN2302ALT1G , S-LN2302ALT1G ELECTRICAL CHARACTERISTICS Symbol Parameter Limit Min Typ Max 0.9 1.2 Unit STATIC PARAMETERS V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.6 IGSS Gate-Body Leakage Current VDS=0V, VGS=±8V ±100 VDS=20V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current RDS(ON) VSD On-State Drain Current a Drain-Source On-Resistance Diode Forward Voltage 10 VDS≧5V, VGS= 4.5V 6 VDS≧5V, VGS= 2.5V 4 A VGS=4.5V, ID= 2.8A 55 85 VGS=2.5V, ID= 2.5A 65 115 VGS=1.8V, ID= 2.2A 80 130 0.75 1.2 IS=1A, VGS=0V nA μA VDS=20V, VGS=0V TJ=55℃ ID(ON) V mΩ V DYNAMIC PARAMETERS Qg Total Gate Charge 9 Qgs Gate-Source Charge Qgd Gate-Drain Charge 3 Ciss Input Capacitance 450 Coss Output Capacitance Crss Reverse Transfer Capacitance 22 td(on) Turn-On Delay Time 9 tr Rise Time VDD=10V, RL =10Ω 23 td(off) Turn-Off Delay Time VGEN=4.5Ω, RG=6Ω 38 tf Fall Time VDS=10V, VGS=4.5V, ID=2.8A VDS=10V, VGS=0V, f=1MHZ nC 2.2 pF 72 ns 3 Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2% Rev .O 2/5 LESHAN RADIO COMPANY, LTD. Typical Characteristics (TJ =25℃ Noted) LN2302ALT1G , S-LN2302ALT1G Rev .O 3/5 LESHAN RADIO COMPANY, LTD. Typical Characteristics (TJ =25℃ Noted) LN2302ALT1G , S-LN2302ALT1G Rev .O 4/5 LESHAN RADIO COMPANY, LTD. LN2302ALT1G , S-LN2302ALT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev .O 5/5