STC2907A PNP Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -60 Units V VCEO VEBO Collector-Emitter Voltage -60 V Emitter-Base Voltage -5 IC V Collector Current -600 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -10µA, IE=0 Min. -60 BVCEO * Collector Emitter Breakdown Voltage IC= -10mA, IB=0 -60 BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 ICBO Collector Cut-off Current VCB= -50V, IE=0 hFE DC Current Gain IC= -0.1mA, VCE= -10V VCE= -10V, IC= -1mA, VCE= -10V , IC= -10mA VCE= -10V, *IC= -150mA VCE= -10V, *IC= -500mA Typ. Max. V V -10 75 100 100 100 50 Units V nA 300 VCE (sat) * Collector-Emitter Saturation Voltage IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA -0.4 -1.6 V V VBE (sat) Base Emitter Saturation Voltage IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA -1.3 -2.6 V V Cob Output Capacitance VCB= -10V, IE=0 f=1MHz 8 pF fT * Current Gain Bandwidth Product IC= -50mA, VCE= -20V f=100MHz tON Turn On Time VCC= -30V, IC= -150mA IB1= -15mA 45 ns tOFF Turn Off Time VCC= -6V, IC= -150mA IB1=IB2= -15mA 100 ns * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% 200 MHz STC2907A VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = -10V 100 10 -1 -10 -100 -10 IC = 10 IB VBE(sat) -1 -0.1 VCE(sat) -0.01 -1000 -1 IC[A], COLLECTOR CURRENT -100 -1000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 100 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz Cob [pF], CAPACITANCE -10 10 1 VCE = -20V 100 10 0.1 -1 -10 VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Output Capacitance -100 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product