BC556/557/558/559/560 PNP Epitaxial Silicon Transistor TO-92 1. COLLECTOR 2. BASE 3. EMITTER Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BC556 : BC557/560 : BC558/559 Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 VCEO Value Units -80 -50 -30 V V V -65 -45 -30 V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB= -30V, IE=0 Min. 110 Typ. Max. -15 -300 -650 hFE DC Current Gain VCE= -5V, IC=2mA VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -90 -250 VBE (sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -700 -900 VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA -600 fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=10MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz NF Noise Figure VCE= -5V, IC= -200µA f=1KHz, RG=2KΩ VCE= -5V, IC= -200µA RG=2KΩ, f=30~15000MHz : BC556/557/558 : BC559/560 : BC559 : BC560 800 mV mV mV mV -660 -750 -800 150 mV mV MHz 2 1 1.2 1.2 6 pF 10 4 4 2 dB dB dB dB hFE Classification Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 http://www.luguang.cn Units nA Email:[email protected] BC556/557/558/559/560 Typical Characteristics 1000 -50 IB = -400µA VCE = -5V IB = -350µA -40 IB = -300µA -35 IB = -250µA -30 IB = -200µA -25 -20 IB = -150µA -15 IB = -100µA -10 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 100 10 IB = -50µA -5 1 -0.1 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -100 -10 VCE = -5V IC = -10 IB V BE(sat) -0.1 VCE(sat) -10 -1 -0.1 -1 -10 -100 -0.2 f=1MHz IE = 0 1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance http://www.luguang.cn -0.6 -0.8 -1.0 -1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Cob(pF), CAPACITANCE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 -0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT -1 -100 Figure 2. DC current Gain IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic -0.01 -0.1 -10 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -1 -1 1000 VCE = -5V 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Email:[email protected]