DE275X2-501N16A

DE275X2-501N16A
RF Power MOSFET
♦
♦
♦
♦
♦
Common Source Push-Pull Pair
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a
common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
VDSS
=
500 V
ID25
=
16 A
RDS(on)
=
0.38 Ω
PDC
= 1180 W
Unless noted, specifications are for each device
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
16
A
IDM
Tc = 25°C, pulse width limited by TJM
186
A
IAR
Tc = 25°C
16
A
EAR
Tc = 25°C
20
mJ
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
5
V/ns
dv/dt
>200
V/ns
1180
W
750
W
5.0
W
RthJC (1)
0.13
C/W
RthJHS (1)
0.17
C/W
(1)
PDHS
(1)
PDAMB (1)
Symbol
Tc = 25°C, Derate 6.0W/°C above 25°C
Tc = 25°C
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
VDSS
VGS = 0 V, ID = 3 ma
500
VGS(th)
VDS = VGS, ID = 4 ma
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
gfs
VDS = 15 V, ID = 0.5ID25, pulse test
2
5.5
1.6mm (0.063 in) from case for 10 s
V
SD1
SD2
SG2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
•
•
−
−
•
•
•
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
±100
nA
50
1
µA
mA
• Optimized for RF and high speed
0.38
Ω
11
S
+175
-55
Tstg
GATE 2
• High Performance Push-Pull RF
175
TJM
Weight
max.
V
-55
TJ
TL
typ.
DRAIN 2
GATE 1
SG1
IS = 0
PDC
DRAIN 1
°C
°C
+175
°C
300
°C
4
g
Package
switching at frequencies to >65MHz
• Easy to mount—no insulators needed
• High power density
Note: All specifications are per each
transistor, unless otherwise noted.
(1)
Thermal specifications are for the
package, not per transistor
DE275X2-501N16A
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
RG
0.3
Ω
Ciss
1800
pF
150
pF
45
pF
21
pF
3
ns
2
ns
4
ns
5
ns
50
nC
20
nC
30
nC
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Coss
Crss
Cstray
Back Metal to any Pin
Td(on)
Ton
Td(off)
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
Toff
Qg(on)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Qgs
Qgd
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
min.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
Trr
QRM
IF = IS, -di/dt = 100A/µs,
VR = 100V
IRM
(1)
typ.
max.
16
A
186
A
1.5
V
200
ns
0.8
µC
6.5
A
These parameters apply to the package, not individual MOSFET devices.
For detailed device mounting and installation instructions, see the “DESeries MOSFET Mounting Instructions” technical note on IXYS RF’s web
site at www.ixysrf.com/Technical_Support/App_notes.html
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
DE275X2-501N16A
RF Power MOSFET
10000
Ciss
Coss
Capacitance in pF
Crss
1000
100
10
0
50
100
150
200
250
300
350
Vds in Volts
275X2-501N16A Capacitances vs Vds
400
450
500
DE275X2-501N16A
RF Power MOSFET
501N16A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the
device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response
necessary for a high power device model. The turn on delay and the turn off delay are adjusted
via Ron and Roff.
10 DRAIN
Ld
4
Lg
Doff
Roff
D1crs
Rd
D2crs
20 GATE
6
8
1
5
Ron
Don
Dcos
Rds
3
M3
2
7
Ls
30 SOURCE
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
SYM=POWMOSN
.SUBCKT 501N16A 10 20 30
* TERMINALS: D G S
* 500 Volt 16 Amp .38 ohm N-Channel Power MOSFET
* REVA 6-15-00
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .2
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.0N
RD 4 1 .38
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M)
.MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M)
.ENDS
Doc #9200-0245 Rev 3
© 2003 IXYS RF
An
IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: [email protected]
Web: http://www.directedenergy.com