Directed Energy, Inc. An DE275-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 16 A IDM Tc = 25°C, pulse width limited by TJM 98 A IAR Tc = 25°C 16 A EAR Tc = 25°C 20 mJ 5 V/ns dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω >200 V/ns 375 W 3.0 W 0.33 K/W -55…+150 °C TJM 150 °C Tstg -55…+150 °C 300 °C 2 g PDHS PDAMB Tc = 25°C RthJHS TJ TL 1.6mm (0.063 in) from case for 10 s Weight Symbol Test Conditions = 500 V ID25 = 16 A RDS(on) = .5 Ω PDHS = 375 W Maximum Ratings IS = 0 Tc = 25°C Derate 3.0W/°C above 25°C VDSS Characteristic Values TJ = 25°C unless otherwise specified min. VDSS VGS = 0 V, ID = 3 ma 500 VGS(th) VDS = VGS, ID = 4 ma 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C TJ = 125°C VGS = 0 RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test typ. max. SG1 SG2 SD1 SD2 Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials V • Optimized for RF and high speed 5.5 V ±100 nA • Easy to mount—no insulators needed • High power density .5 6 GATE Advantages 50 µA 1 mA 2 DRAIN Ω S switching at frequencies to 100MHz Directed Energy, Inc. An DE275-501N16A IXYS Company Symbol Test Conditions RF Power MOSFET Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 0.3 Ω 1800 pF 150 pF Crss 45 pF Td(on) 3 ns 2 ns 4 ns 5 ns 50 nC 20 nC 30 nC RG Ciss Coss Ton Td(off) VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% Trr QRM IF = IS, -di/dt = 100A/µs, VR = 100V typ. max. 6 A 48 A 1.5 V 200 ns 0.6 µC 4 A IRM Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions. DEI MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 Directed Energy, Inc. An DE275-501N16A IXYS Company RF Power MOSFET 501N16A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. 10 DRAIN Ld 4 Lg Doff D1crs Roff Rd D2crs 20 GATE 6 8 1 5 Don 2 M3 Dcos Rds 3 Ron 7 Ls 30 SOURCE Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: SYM=POWMOSN .SUBCKT 501N16A 10 20 30 * TERMINALS: D G S * 500 Volt 16 Amp .5 ohm N-Channel Power MOSFET * REVA 6-15-00 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 .2 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.0N RD 4 1 .5 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8) .MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M) .MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M) .ENDS Doc #9200-0222 Rev 1 © 2001 Directed Energy, Inc. Directed Energy, Inc. An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.directedenergy.com