IXYS DE475

Directed Energy, Inc.
An
♦
♦
♦
♦
♦
DE475-501N44A
IXYS Company
RF Power MOSFET
Preliminary Data Sheet
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
30MHz Maximum Frequency
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
44
A
IDM
Tc = 25°C, pulse width limited by TJM
264
A
IAR
Tc = 25°C
44
A
EAR
Tc = 25°C
30
mJ
5
V/ns
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
>200
V/ns
600
W
4.5
W
-55…+150
°C
TJM
150
°C
Tstg
-55…+150
°C
300
°C
3
g
IS = 0
PDHS
Tc = 25°C
Derate 4.4W/°C above 25°C
PDAMB
Tc = 25°C
TJ
TL
1.6mm (0.063 in) from case for 10 s
Weight
Symbol
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
VDSS
VGS = 0 V, ID = 3 ma
500
VGS(th)
VDS = VGS, ID = 4 ma
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS TJ = 25°C
TJ = 125°C
VGS = 0
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
gfs
VDS = 15 V, ID = 0.5ID25, pulse test
typ.
max.
V
5.5
V
±100
nA
50 µA
1 mA
0.14
32
Ω
S
VDSS
=
500 V
ID25
=
44 A
RDS(on)
=
0.14 Ω
PDHS
=
600W
DRAIN
GATE
SG1
SG2
SD1
SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
•
•
−
−
•
•
•
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 30MHz
• Easy to mount—no insulators needed
• High power density
Directed Energy, Inc.
An
DE475-501N44A
IXYS Company
Symbol
Test Conditions
RF Power MOSFET
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
RG
Ciss
Coss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Crss
typ.
0.3
Ω
5500
pF
990
pF
330
pF
5
ns
5
ns
5
ns
8
ns
162
nC
56
nC
70
nC
0.20
K/W
Td(on)
Ton
Td(off)
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
Toff
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Qgd
RthJHS
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
min.
Trr
QRM
max.
IF = IS, -di/dt = 100A/µs,
VR = 100V
typ.
max.
44
A
264
A
1.5
V
200
ns
0.6
µC
14
A
IRM
For detailed device mounting and installation instructions, see the “DESeries MOSFET Mounting Instructions” technical note on DEI’s web site at
www.directedenergy.com/apptech.htm
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
Directed Energy, Inc.
An
IXYS Company
DE475-501N44A
RF Power MOSFET
501N44A DE-SERIES SPICE Model (Preliminary)
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term.
The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are
adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
.SUBCKT 501N44A 10 20 30
* TERMINALS: D G S
* 500 Volt 44 Amp 0.14 ohm N-Channel Power MOSFET
* REV.A 01-09-02
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.3
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 5.5N
RD 4 1 0.15
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0248 Rev 1
© 2002 Directed Energy, Inc.
Directed Energy, Inc.
An
IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: [email protected]
Web: http://www.directedenergy.com