DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 4.5 A IDM Tc = 25°C, pulse width limited by TJM 27 A IAR Tc = 25°C 4.5 A EAR Tc = 25°C - mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 3.5 V/ns dv/dt >200 V/ns 200 W 80 W 3.5 W RthJC 0.74 C/W RthJHS 1.50 C/W IS = 0 PDC PDHS Tc = 25°C Derate 4.4W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions TJ = 25°C unless otherwise specified VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 250 µa IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C typ. max. 500 2.5 V 3.4 RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 1.2 gfs VDS = 60 V, ID = 0.5ID25, pulse test 1.9 -55 TJ Weight V ±100 nA 25 250 µA µA 1.5 Ω S +175 -55 Tstg TL 4 175 TJM 1.6mm (0.063 in) from case for 10 s = 500 V ID25 = 4.5 A RDS(on) ≤ 1.5 Ω PDC = 200W DRAIN GATE SG1 SG2 SD1 SD2 Features Characteristic Values min. VDSS °C °C +175 °C 300 °C 2 g • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages • Optimized for RF and high speed switching at frequencies to >100MHz • Easy to mount—no insulators needed • High power density DE150-501N04A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 5 RG Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 , Ig = 3 ma Qgd Source-Drain Diode Ω 570 pF 75 pF 3 pF 16 pF 4 ns 4 ns 4 ns 4 ns 14 nC 3.5 nC 5.5 nC Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% min. typ. max. 4.5 A 27 A 1.4 V 900 Trr ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE150-501N04A RF Power MOSFET Fig. 2 Typical Transfer Characteristics V DS = 60V, PW = 20µS Typical Output Characteristics 18 18 16 16 14 14 ID, Drain Currnet (A) ID, Drain Current (A) Fig. 1 12 10 8 6 4 Top 10V 9V 8V 7.5V 7V 6.5V 6V 5.5V Bottom 5V 12 10 8 6 4 2 2 0 0 4 5 6 7 8 9 0 10 10 20 30 40 50 VDS, Drain-to-Source Voltage VGS, Gate-to Source Voltage (V) Fig. 4 Fig. 3 Gate Charge vs. Gate-to-Source Voltage V DS = 250V, ID = 2.25A V D S Voltage vs. Capacitance 1000 Ciss 14 12 Capacitance (pF) G ate-to-Source Voltage (V) 60 10 8 6 4 Coss 100 10 Crss 2 1 0 0 5 10 15 Gate Charge (nC) 20 25 0 50 100 150 200 250 VDS Voltage (V) 300 350 400 DE150-501N04A RF Power MOSFET Fig. 5 Package drawing Source Source Gate Drain Source Source DE150-501N04A RF Power MOSFET 501N04A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 6. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 6 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYSRF web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de150-501n04a.html Net List: *SYM=POWMOSN .SUBCKT 501N04A 10 20 30 * TERMINALS: D G S * 500 Volt 4.5 Amp 1.5 Ohm N-Channel Power MOSFET 10-30-2001 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 9.5 DON 6 2 D1 ROF 5 7 3.5 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 .6N RD 4 1 1.5 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .1N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=6.0) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=175P BV=500 M=.5 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=250P BV=500 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0240 Rev 5 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com