MIXA20W1200TML Six-Pack XPT IGBT VCES =1200 V IC25 = 28 A VCE(sat)= 1.8 V Part name (Marking on product) MIXA20W1200TML 10, 23 14 18 22 13 17 21 8 11, 12 15, 16 19, 20 NTC E72873 Pin configuration see outlines. 7 6 4 2 5 3 1 9, 24 Features: Application: Package: •High level of integration •Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge -square RBSOA @ 3x IC - low EMI •Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) •Temperature sense included •SONIC™ diode - fast and soft reverse recovery - low operating forward voltage •AC motor drives •Pumps, Fans •Washing machines •Air-conditioning system •Inverter and power supplies •E1 package •Assembly height is 17.1 mm •Insulated base plate •Pins suitable for wave soldering and PCB mounting •UL registered E72873 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110118b 1-6 MIXA20W1200TML Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 28 20 A A TC = 25°C 100 W collector emitter saturation voltage IC = 16 A; VGE = 15 V TVJ= 25°C TVJ=125°C 2.1 V V VGE(th) gate emitter threshold voltage IC = 0.6 mA; VGE = VCE TVJ= 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C IGES gate emitter leakage current VGE = ±20 V VCE = 600 V; VGE = 15 V; IC = 15 A TVJ= 25°C QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse RBSOA reverse bias safe operating area VGE = ±15 V; RG = 56 W; VCEK = 1200 V TVJ=125°C ISC (SCSOA) short circuit safe operating area VCE = 900 V; VGE = ±15 V; TVJ = 125°C RG = 56 W; tp = 10 µs; non-repetitive RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 56 W typ. 1.8 2.1 5.4 5.9 6.5 V 0.1 mA mA 500 nA 0.1 TVJ=125°C 48 nC 70 40 250 100 1.55 1.7 ns ns ns ns mJ mJ 45 60 A A 1.26 0.42 K/W K/W Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy max. Unit TVJ= 25°C 1200 V TC = 25°C TC = 80°C 33 22 A A IF = 20 A; VGE = 0 V TVJ= 25°C TVJ=125°C 1.95 1.95 2.2 V V TVJ=125°C 3 20 350 0.7 RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink VR = 600 V diF /dt = -400 A/µs IF = 20 A; VGE = 0 V typ. (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved min. µC A ns mJ 1.5 0.5 K/W K/W 20110118b 2-6 MIXA20W1200TML Temperature Sensor NTC Symbol Definitions Conditions R25 B25/50 resistance min. TC = 25°C 4.75 Ratings typ. max. 5.0 3375 5.25 Unit kW K 100000 10000 R [Ω] 1000 100 10 0 25 50 75 100 125 150 TC [°C] Typ. NTC resistance vs. temperature Module Symbol Definitions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index FC mounting force dS dA creep distance on surface strike distance through air Conditions Ratings typ. max. Unit 125 150 125 °C °C °C 2500 V~ -40 -40 IISOL < 1 mA; 50/60 Hz Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved min. 40 80 12.7 12.7 N mm mm 40 TC = 25°C unless otherwise stated g 20110118b 3-6 MIXA20W1200TML Circuit Diagram 10, 23 14 18 22 13 17 21 8 11, 12 15, 16 19, 20 NTC 7 6 4 2 5 3 1 9, 24 Outline Drawing Dimensions in mm (1 mm = 0.0394“) Part number M = Module I = IGBT X = XPT A = standard 20 = Current Rating [A] W = 6-Pack 1200 = Reverse Voltage [V] T = NTC ML = E1-Pack XXXXXX..... YWWx XXX... Logo Part name Date Code Prod. Code UL Ordering Part Name Marking on Product Standard MIXA 20 W 1200 TML MIXA20W1200TML IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 10 510162 20110118b 4-6 MIXA20W1200TML IGBT T1 - T6 30 IC [A] 30 VGE = 15 V 25 25 20 20 TVJ = 25°C 15 IC TVJ = 125°C 11 V TVJ = 125°C 15 [A] 10 9V 10 5 0 13 V VGE = 15 V 17 V 19 V 5 0 1 2 0 3 VCE [V] Fig. 1 Typ. output characteristics 0 1 2 3 VCE [V] 4 5 Fig. 2 Typ. output characteristics 30 20 IC = 15 A VCE = 600 V 25 15 20 IC [A] VGE 15 10 [V] 10 0 5 TVJ = 125°C 5 TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 10 20 VGE [V] 4 E Eon 2.4 Eoff E [mJ] [mJ] 1 5 10 60 15 20 25 30 35 IC [A] Fig. 5 Typ. switching energy vs. collector current 140 160 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved IC = 15 A VCE = 600 V VGE = ±15 V TVJ = 125°C 2.0 1.6 0 50 2.8 RG = 56 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 2 0 40 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 3 30 QG [nC] 1.2 40 Eoff Eon 60 80 100 120 RG [Ω] Fig. 6 Typ. switching energy vs. gate resistance 20110118b 5-6 MIXA20W1200TML Diode D1 - D6 40 5 TVJ = 125°C VR = 600 V 30 4 40 A IF Qrr 20 [A] 3 20 A [µC] TVJ = 125°C 10 2 TVJ = 25°C 0 0.0 0.5 1.0 1.5 VF [V] 2.0 2.5 10 A 1 200 3.0 Fig. 7 Typ. Forward current versus VF 300 400 500 diF /dt [A/µs] 600 700 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt 35 700 40 A TVJ = 125°C 30 TVJ = 125°C 600 VR = 600 V 20 A 25 VR = 600 V 500 10 A IRR 20 [A] 15 [ns] 300 10 200 5 100 trr 0 200 300 400 500 600 400 40 A 20 A 10 A 0 200 700 300 400 500 600 700 diF /dt [A/µs] diF /dt [A/µs] Fig. 9 Typ. peak reverse current IRM vs. di/dt Fig. 10 Typ. recovery time trr versus di/dt 1.4 10 TVJ = 125°C VR = 600 V 1.2 Diode 1.0 1 40 A Erec IGBT ZthJC 0.8 20 A [mJ] IGBT [K/W] 0.6 Ri 0.1 0.4 300 400 500 600 700 diF /dt [A/µs] Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Ri ti 1 0.252 0.0015 0.461 0.0015 10 A 0.2 200 FRD ti 0.01 0.001 0.01 2 0.209 0.03 0.291 0.03 3 0.541 0.03 0.423 0.03 4 0.258 0.08 0.326 0.08 0.1 1 10 tp [s] Fig. 12 Typ. transient thermal impedance 20110118b 6-6