MIXA10WB1200TMH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM =1600 V VCES = 1200 V VCES =1200 V IDAVM25= 100 A IC25 = 17 A IC25 = 17 A IFSM = 270 A VCE(sat)= 1.8 V VCE(sat)= 1.8 V Preliminary data Part name (Marking on product) MIXA10WB1200TMH P P1 T1 D8 D10 D12 T3 D7 D5 D3 G1 NTC1 T5 D1 G3 G5 L1 L2 B L3 T6 T4 D2 NTC2 GB W V T2 T7 D9 D11 D13 U G4 G2 D6 D4 E 72873 G6 Pin configuration see outlines. N NB EU EV EW Features: Application: Package: •High level of integration - only one power semiconductor module required for the whole drive •Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge -square RBSOA @ 3x IC - low EMI •Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) •Temperature sense included •SONIC™ diode - fast and soft reverse recovery - low operating forward voltage •AC motor drives •Pumps, Fans •Washing machines •Air-conditioning system •Inverter and power supplies •"Mini" package •Assembly height is 17 mm •Insulated base plate •Pins suitable for wave soldering and PCB mounting •Assembly clips available - IXKU 5-505 screw clamp - IXRB 5-506 click clamp •UL registered E72873 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110916b 1-7 MIXA10WB1200TMH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 17 12 A A TC = 25°C 63 W collector emitter saturation voltage IC = 9 A; VGE = 15 V TVJ= 25°C TVJ=125°C 2.1 V V VGE(th) gate emitter threshold voltage IC = 0.3 mA; VGE = VCE TVJ= 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C IGES gate emitter leakage current VGE = ±20 V VCE = 600 V; VGE = 15 V; IC = 10 A TVJ= 25°C QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse RBSOA reverse bias safe operating area VGE = ±15 V; RG = 100 W; VCEK = 1200 V TVJ=125°C ISC (SCSOA) short circuit safe operating area VCE = 900 V; VGE = ±15 V; TVJ = 125°C RG = 100 W; tp = 10 µs; non-repetitive RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 100 W typ. 1.8 2.1 5 TVJ=125°C 5.5 6.5 V 0.02 0.2 0.1 mA mA 500 nA 27 nC 70 40 250 100 1.1 1.1 ns ns ns ns mJ mJ 30 40 A A 2 K/W K/W max. Unit 0.7 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage TVJ= 25°C 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 19 13 A A VF forward voltage IF = 10 A; VGE = 0 V TVJ= 25°C TVJ=125°C 1.95 1.85 2.2 V V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy TVJ=125°C 1.2 9 320 0.4 RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink VR = 600 V diF /dt = -250 A/µs IF = 10 A; VGE = 0 V typ. (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved min. µC A ns mJ 2.4 0.8 K/W K/W 20110916b 2-7 MIXA10WB1200TMH Brake T7 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage max. Unit 1200 V continuous transient ±20 ±30 V V IC25 IC80 collector current TC = 25°C TC = 80°C 17 12 A A Ptot total power dissipation TC = 25°C 63 W VCE(sat) collector emitter saturation voltage IC = 9 A; VGE = 15 V TVJ= 25°C TVJ=125°C 2.1 V V VGE(th) gate emitter threshold voltage IC = 0.3 mA; VGE = VCE TVJ= 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C IGES gate emitter leakage current VGE = ±20 V VCE = 600 V; VGE = 15 V; IC = 10 A min. TVJ= 25°C QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse RBSOA reverse bias safe operating area VGE = ±15 V; RG = 100 W; VCEK = 1200 V TVJ=125°C ISC (SCSOA) short circuit safe operating area VCE = 900 V; VGE = ±15 V; TVJ = 125°C RG = 100 W; tp = 10 µs; non-repetitive RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 100 W typ. 1.8 2.1 5 TVJ=125°C 5.5 6.5 V 0.01 0.1 0.1 mA mA 500 nA 27 nC 70 40 250 100 1.1 1.1 ns ns ns ns mJ mJ 30 40 A A 2 0.7 K/W K/W Brake Chopper D7 Ratings typ. max. Unit TVJ=150°C 1200 V TC = 25°C TC = 80°C 12 8 A A forward voltage IF = 5 A; VGE = 0 V TVJ= 25°C TVJ=125°C 1.95 1.85 2.2 V V IR reverse current VR = VRRM TVJ= 25°C TVJ=125°C 0.01 0.1 0.1 mA mA Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy TVJ=125°C 0.7 6 320 0.2 RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink Symbol Definitions Conditions VRRM max. repetitive reverse voltage IF25 IF80 forward current VF VR = 600 V diF /dt = 200 A/µs IF = 5 A; VGE = 0 V (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved min. µC A ns mJ 3.4 1.1 K/W K/W 20110916b 3-7 MIXA10WB1200TMH Input Rectifier Bridge D8 - D11 min. Ratings typ. max. Symbol Definitions Conditions VRRM max. repetitive reverse voltage TVJ= 25°C 1600 V IFAV IDAVM average forward current max. average DC output current sine 180° rect.; d = 1/3 TC = 80°C TC = 80°C 24 69 A A IFSM max. forward surge current t = 10 ms; sine 50 Hz TVJ= 25°C TVJ=125°C 270 240 A A I2t I2t value for fusing t = 10 ms; sine 50 Hz TVJ= 25°C TVJ=125°C 360 290 A2s A2s Ptot total power dissipation TC = 25°C VF forward voltage IF = 30 A TVJ= 25°C TVJ=125°C 1.27 1.24 IR reverse current VR = VRRM TVJ= 25°C TVJ=125°C 0.3 RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per diode) (per diode) Unit 69 W 1.6 V V 0.01 mA mA 1.8 K/W K/W 0.6 Temperature Sensor NTC Symbol Definitions Conditions R25 B25/50 resistance Symbol Definitions Conditions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage min. TC = 25°C 4.75 Ratings typ. max. 5.0 3375 5.25 Unit kW K Module CTI comparative tracking index FC mounting force dS dA creep distance on surface strike distance through air min. Ratings typ. max. Unit 125 150 125 °C °C °C 2500 V~ -40 -40 IISOL < 1 mA; 50/60 Hz 40 80 12.7 12 Weight N mm mm 35 g Equivalent Circuits for Simulation I R0 Ratings typ. max. Unit TVJ=150°C 0.86 12.3 V mW T1 - T6 TVJ=150°C 1.1 153 V mW free wheeling diode D1 - D6 TVJ=150°C 1.09 91 V mW V0 R0 IGBT T7 TVJ=150°C 1.1 153 V mW V0 R0 free wheeling diode D7 TVJ=150°C 1.15 171 V mW V0 Symbol Definitions Conditions V0 R0 rectifier diode D8 - D13 V0 R0 IGBT V0 R0 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved min. TC = 25°C unless otherwise stated 20110916b 4-7 MIXA10WB1200TMH Circuit Diagram P P1 T1 D8 D10 D12 T3 D7 G1 NTC1 T5 D1 D5 D3 G3 G5 L1 L2 B L3 T6 T4 D2 NTC2 GB EU G6 EV Outline Drawing Dimensions in mm (1 mm = 0.0394“) 48,26 44,45 35,56 31,75 27,94 26,37 12 0,5 8,15 ±0,35 A 20,5 ±0,50 EW 14 Ø4 17 ±0,35 D6 D4 G4 G2 NB N W V T2 T7 D9 D11 D13 U 55,9 40,6 2,2 1,2 A (2:1) 0,635 P1 G1 U G3 V G5 W NB GB B EW G6 EV G4 EU P G2 NTC1 L1 Ø 0.4 L2 L3 N 1,4 1,8 3,6 Pin positions with tolerance 17,78 10,16 8,89 6,35 2,54 31,75 22,86 19,05 45,6 39,6 23 26,6 24,13 20,32 16,51 8,89 12,4 25,6 12 NTC2 Product Marking Part number M = Module I = IGBT X = XPT A = standard 20 = Current Rating [A] WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit 1200 = Reverse Voltage [V] T = NTC MH = MiniPack2 Ordering Standard Part Name Marking on Product MIXA 10 WB 1200 TMH MIXA10WB1200TMH IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 20 508609 20110916b 5-7 MIXA10WB1200TMH 20 20 VGE = 15 V 16 16 12 TVJ = 25°C IC [A] VGE = 15 V 17 V 19 V 8 8 [A] TVJ = 125°C 11 V TVJ = 125°C 12 IC 13 V 9V 4 0 4 0 1 VCE [V] 2 0 3 Fig. 1 Typ. output characteristics 20 16 [A] 1 2 VCE [V] 3 4 Fig. 2 Typ. output characteristics 20 IC 0 IC = 10 A VCE = 600 V 15 12 VGE [V] 8 10 5 4 TVJ = 125°C 0 TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 10 RG = 100 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 2.5 30 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 3.0 20 QG [nC] VGE [V] 2.0 Eon 1.6 IC = 10 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon 2.0 E Eoff 1.5 [mJ] E [mJ] 1.0 Eoff 0.8 0.4 0.5 0.0 1.2 0 4 8 12 16 20 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 0.0 80 120 160 200 240 RG [ΩW] Fig. 6 Typ. switching energy vs. gate resistance 20110916b 6-7 MIXA10WB1200TMH 100000 2.4 20 TVJ = 125°C VR = 600 V 2.0 15 20 A IF Qrr 10 [A] TVJ = 25°C 0 0.0 0.5 1.0 1.5 VF [V] 2.0 2.5 0.0 100 200 0 3.0 5A 25025 50 300 75 100 350 400 [°C] [A/µs] diFT/dt 450 125 500 150 Fig.8 8Typ. Typical reverse recovery charge Fig. thermistor resistance vs. temperature Qrr versus. diF/dt (125°C) 24 500 TVJ = 125°C 20 [A] 10 A 0.4 Fig. 7 Typ. forward characteristics IRR 1.2 [µC] 0.81000 TVJ = 125°C 5 Rnom [W ] 1.610000 TVJ = 125°C 20 A VR = 600 V 20 A 400 VR = 600 V 10 A 16 5A 12 trr [ns] 10 A 300 5A 200 8 100 4 0 200 250 300 350 400 diF /dt [A/µs] 450 500 Fig. 9 Typical peak reverse current IRR versus diF/dt (125°C) 0 200 250 300 350 400 diF /dt [A/µs] 450 500 Fig. 10 Typ. recovery time trr vs. di/dt (125°C) 0.6 TVJ = 125°C VR = 600 V 0.5 20 A Erec 0.4 [mJ] 10 A 0.3 5A 0.2 0.1 200 250 300 350 400 diF /dt [A/µs] 450 500 IXYS reserves to change limits, test conditions and didimensions. /dt (125°C) Fig.the 11right Typ. recovery energy E vs. rec © 2011 IXYS All rights reserved F 20110916b 7-7