RENESAS FK7VS-12

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FK7VS-12
HIGH-SPEED SWITCHING USE
FK7VS-12
OUTLINE DRAWING
r
Dimensions in mm
4.5
1.3
+0.3
0 –0
(1.5)
3.0 –0.5
+0.3
1.5MAX.
8.6 ± 0.3
9.8 ± 0.5
1.5MAX.
10.5MAX.
1
5
0.5
q w e
wr
¡VDSS ................................................................................ 600V
¡rDS (ON) (MAX) .............................................................. 1.63Ω
¡ID ............................................................................................ 7A
¡Integrated Fast Recovery Diode (MAX.) ........150ns
2.6 ± 0.4
4.5
0.8
q GATE
w DRAIN
e SOURCE
r DRAIN
q
e
TO-220S
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Conditions
VGS = 0V
VDS = 0V
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
Ratings
600
±30
7
Unit
V
V
A
21
7
21
125
A
A
A
W
–55 ~ +150
–55 ~ +150
1.2
°C
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK7VS-12
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
V (BR) DSS
V (BR) GSS
Drain-source breakdown voltage
Gate-source breakdown voltage
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
VGS (th)
rDS (ON)
Gate-source threshold voltage
Drain-source on-state resistance
VDS (ON)
yfs
Ciss
Coss
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
Turn-off delay time
Fall time
Source-drain voltage
tf
VSD
Rth (ch-c)
Unit
Min.
Typ.
Max.
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
600
±30
—
—
—
—
—
—
±10
V
V
µA
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 3A, VGS = 10V
ID = 3A, VGS = 10V
ID = 3A, VDS = 10V
—
2
—
—
—
3
1.25
3.75
1
4
1.63
4.89
mA
V
Ω
V
3.3
—
—
—
5.5
1100
125
17
—
—
—
—
S
pF
pF
pF
—
—
—
—
30
30
100
35
—
—
—
—
ns
ns
ns
ns
—
1.5
2.0
V
—
—
—
—
1.0
150
°C/W
ns
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω
IS = 3A, VGS = 0V
Channel to case
IS = 7A, dis/dt = –100A/µs
Thermal resistance
Reverse recovery time
trr
Limits
Test conditions
PERFORMANCE CURVES
MAXIMUM SAFE OPERATING AREA
5
3
2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
50
100
150
CASE TEMPERATURE TC (°C)
200
100µs
1ms
100
7
5
3
2
10–1
0
tw=10µs
101
7
5
3
2
10ms
TC = 25°C
Single Pulse
DC
7
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK7VS-12
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS
(TYPICAL)
TC = 25°C
Pulse Test
VGS=20V
10V
6V
16
12
8
5V
PD = 125W
4
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
20
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS=20V
10
10V
TC = 25°C
6V
Pulse Test
8
4
2
4V
4V
0
0
10
20
30
40
0
50
24
16
7A
8
3A
4
8
12
16
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
ID = 14A
16
20
TC = 25°C
Pulse Test
4.0
3.0
VGS = 10V
20V
2.0
1.0
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
101
7
5
20
TC = 25°C
VDS = 50V
Pulse Test
16
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
12
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5.0
12
8
4
0
8
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
32
0
4
DRAIN-SOURCE VOLTAGE VDS (V)
TC = 25°C
Pulse Test
0
0
DRAIN-SOURCE VOLTAGE VDS (V)
40
0
5V
PD =
125W
6
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TC = 25°C
VDS = 10V
Pulse Test
3
2
75°C
125°C
100
7
5
3
2
10–1 –1
10
2 3
5 7 100
2 3
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK7VS-12
HIGH-SPEED SWITCHING USE
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
Ciss
103
7
5
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
2
3
2
Coss
102
7
5
3
2
Crss
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
tf
3
2
tr
td(on)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE CURRENT IS (A)
16
VDS = 100V
200V
12
400V
8
4
101
7
5
5 7 101
2 3
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
40
0
5 7 100
2 3
DRAIN CURRENT ID (A)
Tch = 25°C
ID = 7A
20
40
60
80
VGS = 0V
Pulse Test
32
TC =
125°C
24
16
75°C
8
0
100
25°C
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VGS = 10V
ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
10–1
td(off)
102
7
5
DRAIN-SOURCE VOLTAGE VDS (V)
20
0
3
2
101
10–1
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
GATE-SOURCE VOLTAGE VGS (V)
101 Tch = 25°C
7 f = 1MHz
5 VGS = 0V
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
0
50
100
150
200
250
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK7VS-12
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
3
2
101
7
5
101
7
5
101
3
2
Irr
2 3
5 7
102
100
Tch = 25°C
7
Tch = 150°C
5
3
2 3
5 7 10
SOURCE CURRENT dis/dt (–A/µs)
3
2
3
2
101
7
5
102 trr
7
5
Irr
3
2
101 0
10
3
2
2 3
5 7 101
Tch = 25°C
Tch = 150°C
100
2 3
5 7 102
SOURCE CURRENT IS (A)
DIODE REVERSE VS.
SOURCE CURRENT dis/dt CHARACTERISTIC
(TYPICAL)
5
5
IS = 7A
GS
=
0V
V
3
3
VDD = 250V
2
2
trr
102
7
5
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
102
103
dis/dt = –100A/µs
7
7
VGS = 0V
5
5
VDD = 250V
REVERSE RECOVERY CURRENT Irr (A)
REVERSE RECOVERY TIME trr (ns)
1.4
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
REVERSE RECOVERY CURRENT Irr (A)
REVERSE RECOVERY TIME trr (ns)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
HIGH-SPEED SWITCHING USE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
D=1
0.5
0.2
0.1
PDM
tw
0.05
0.02
0.01
T
D= tw
T
Single Pulse
10–2
–4
–3
10 2 3 5710 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999