To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FK7VS-12 HIGH-SPEED SWITCHING USE FK7VS-12 OUTLINE DRAWING r Dimensions in mm 4.5 1.3 +0.3 0 –0 (1.5) 3.0 –0.5 +0.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.5MAX. 10.5MAX. 1 5 0.5 q w e wr ¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) .............................................................. 1.63Ω ¡ID ............................................................................................ 7A ¡Integrated Fast Recovery Diode (MAX.) ........150ns 2.6 ± 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS (Tc = 25°C) Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Conditions VGS = 0V VDS = 0V Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value Ratings 600 ±30 7 Unit V V A 21 7 21 125 A A A W –55 ~ +150 –55 ~ +150 1.2 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK7VS-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS V (BR) GSS Drain-source breakdown voltage Gate-source breakdown voltage IGSS IDSS Gate-source leakage current Drain-source leakage current VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Coss Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) Turn-off delay time Fall time Source-drain voltage tf VSD Rth (ch-c) Unit Min. Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V 600 ±30 — — — — — — ±10 V V µA VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V — 2 — — — 3 1.25 3.75 1 4 1.63 4.89 mA V Ω V 3.3 — — — 5.5 1100 125 17 — — — — S pF pF pF — — — — 30 30 100 35 — — — — ns ns ns ns — 1.5 2.0 V — — — — 1.0 150 °C/W ns VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω IS = 3A, VGS = 0V Channel to case IS = 7A, dis/dt = –100A/µs Thermal resistance Reverse recovery time trr Limits Test conditions PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 160 120 80 40 0 50 100 150 CASE TEMPERATURE TC (°C) 200 100µs 1ms 100 7 5 3 2 10–1 0 tw=10µs 101 7 5 3 2 10ms TC = 25°C Single Pulse DC 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK7VS-12 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) TC = 25°C Pulse Test VGS=20V 10V 6V 16 12 8 5V PD = 125W 4 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 20 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10 10V TC = 25°C 6V Pulse Test 8 4 2 4V 4V 0 0 10 20 30 40 0 50 24 16 7A 8 3A 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ID = 14A 16 20 TC = 25°C Pulse Test 4.0 3.0 VGS = 10V 20V 2.0 1.0 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 20 TC = 25°C VDS = 50V Pulse Test 16 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 12 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5.0 12 8 4 0 8 ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 32 0 4 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25°C Pulse Test 0 0 DRAIN-SOURCE VOLTAGE VDS (V) 40 0 5V PD = 125W 6 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TC = 25°C VDS = 10V Pulse Test 3 2 75°C 125°C 100 7 5 3 2 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK7VS-12 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Ciss 103 7 5 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 2 3 2 Coss 102 7 5 3 2 Crss DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) tf 3 2 tr td(on) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE CURRENT IS (A) 16 VDS = 100V 200V 12 400V 8 4 101 7 5 5 7 101 2 3 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 40 0 5 7 100 2 3 DRAIN CURRENT ID (A) Tch = 25°C ID = 7A 20 40 60 80 VGS = 0V Pulse Test 32 TC = 125°C 24 16 75°C 8 0 100 25°C 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 10–1 td(off) 102 7 5 DRAIN-SOURCE VOLTAGE VDS (V) 20 0 3 2 101 10–1 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) GATE-SOURCE VOLTAGE VGS (V) 101 Tch = 25°C 7 f = 1MHz 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 0 50 100 150 200 250 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK7VS-12 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) 3 2 101 7 5 101 7 5 101 3 2 Irr 2 3 5 7 102 100 Tch = 25°C 7 Tch = 150°C 5 3 2 3 5 7 10 SOURCE CURRENT dis/dt (–A/µs) 3 2 3 2 101 7 5 102 trr 7 5 Irr 3 2 101 0 10 3 2 2 3 5 7 101 Tch = 25°C Tch = 150°C 100 2 3 5 7 102 SOURCE CURRENT IS (A) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 7A GS = 0V V 3 3 VDD = 250V 2 2 trr 102 7 5 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A/µs 7 7 VGS = 0V 5 5 VDD = 250V REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) 1.4 TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) HIGH-SPEED SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 D=1 0.5 0.2 0.1 PDM tw 0.05 0.02 0.01 T D= tw T Single Pulse 10–2 –4 –3 10 2 3 5710 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999