CLA 50 E 1200 HB V RRM = I T(AV)M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 50 A 79 A Part number 2 CLA 50 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Housing: TO-247 ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Conditions Symbol Definition VRSM/DSM max. non-repetitive reverse/forward blocking voltage VRRM/DRM max. repetitive reverse/forward blocking voltage I R/D reverse current, drain current VT forward voltage drop min. typ. 1300 TVJ = 25°C 1200 V TVJ = 25°C 50 µA VR/D = 1200 V TVJ = 125 °C 4 mA TVJ = 25°C 1.32 V 1.60 V TVJ = 125 °C 1.27 V IT = IT = 50 A 50 A I T = 100 A I T(AV)M average forward current TC = 125 °C I T(RMS) RMS forward current 180° sine threshold voltage rT slope resistance for power loss calculation only R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation PGM max. gate power dissipation 1.65 V T VJ = 150 °C 50 A 79 A TVJ = 150 °C 0.88 V 7.7 mΩ 0.25 K/W 150 °C TC = 25°C 500 W T C = 150 °C 10 W -40 t P = 30 µs t P = 300 µs PGAV average gate power dissipation I TSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved V VR/D = 1200 V I T = 100 A VT0 Unit max. TVJ = 25°C 5 W 0.5 W t = 10 ms; (50 Hz), sine TVJ = 45 °C 550 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 470 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 505 t = 10 ms; (50 Hz), sine TVJ = 45 °C 1.52 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.48 kA²s TVJ = 150 °C 1.11 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C Data according to IEC 60747and per diode unless otherwise specified 1.06 kA²s 25 pF 20101215e CLA 50 E 1200 HB Ratings Symbol Definition Conditions (di/dt) cr critical rate of rise of current TVJ = 150 °C min. repetitive, IT = typ. 40 A max. Unit 150 A/µs f = 50 Hz; tP = 200 µs IG = (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage 0.3 A; di G /dt = 0.3 A/µs VD = ⅔ VDRM non-repetitive, I T = 50 A 500 A/µs VD = ⅔ VDRM TVJ = 150 °C 1000 V/µs TVJ = 25 °C 1.5 V TVJ = -40 °C 1.6 V TVJ = 25 °C 50 mA TVJ = -40 °C 80 mA TVJ = 150 °C 0.2 V 3 mA TVJ = 25 °C 125 mA TVJ = 25 °C 100 mA TVJ = 25 °C 2 µs R GK = ∞; method 1 (linear voltage rise) I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = 6 V VD = 6 V VD = ⅔ VDRM t p = 10 µs IG = IH holding current t gd gate controlled delay time turn-off time 0.3 A/µs VD = 6 V R GK = ∞ VD = ½ VDRM IG = tq 0.3 A; di G /dt = 0.3 A; di G /dt = 0.3 A/µs VR = 100 V; I T = 33 A TVJ = 150 °C 200 µs VD = ⅔ VDRM ; t p = 200 µs di/dt = 10 A/µs; dv/dt = 20 V/µs IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20101215e CLA 50 E 1200 HB Ratings Symbol Definition Conditions I RMS RMS current per terminal R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 70 0.25 -55 Weight K/W 150 6 MD mounting torque FC mounting force with clip A °C g 0.8 1.2 Nm 20 120 N Part number C L A 50 E 1200 HB Product Marking Logo Marking on product DateCode Assembly Code = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200 V) Current Rating [A] Single Part Reverse Voltage [V] TO-247AD (3) abcdef YYWWZ 000000 Assembly Line Ordering Standard Part Name CLA 50 E 1200 HB Similar Part CLA50E1200TC IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Marking on Product CLA50E1200HB Package TO-268AA (D3Pak) Delivering Mode Tube Base Qty Code Key 30 503748 Voltage class 1200 Data according to IEC 60747and per diode unless otherwise specified 20101215e CLA 50 E 1200 HB Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 3x b C A1 2x e IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified 20101215e CLA 50 E 1200 HB 160 900 140 800 10000 VR = 0 V TVJ = 45°C 700 120 600 100 I2t ITSM 500 IT TVJ = 45°C 1000 80 400 [A] 60 [A2s] [A] 300 TVJ = 125°C TVJ = 125°C 40 200 TVJ = 125°C 20 100 TVJ = 25°C 0 0.0 0 0.5 1.0 1.5 2.0 50 Hz, 80% VRRM 2.5 0.01 100 0.1 VT [V] 1 1 Fig. 1 Forward characteristics 80 70 60 100 2 3 typ. tgd VG 1 IT(AV)M 50 Limit 40 6 [V] [A] [µs] 5 4 10 TVJ = 125°C 5: PGM = 1 W 6: PGM = 10 W IGD, TVJ = 150°C 10 0.1 100 1000 30 20 4: PGAV = 0.5 W 10 5 6 7 8 910 2 1000 1 4 Fig. 3 I t versus time (1-10 ms) TVJ = 125°C TVJ = 25°C TVJ = -40°C 1 3 t [ms] Fig. 2 Surge overload current 10 1: IGT, 2: IGT, 3: IGT, 2 t [s] 1 10 10000 0 100 1000 0 20 40 60 80 100 120 140 160 TC [°C] IG [mA] IG [mA] Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time tgd 0.3 Fig. 6 Max. forward current at case temperature Ri ti 0.0075 0.0011 0.017 0.2 ZthJC 0.0019 0.057 0.0115 0.158 0.12 0.0105 0.5 [K/W] 0.1 0.0 0.001 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20101215e