MCMA120UJ1800ED preliminary 3~ Rectifier Thyristor Module VRRM = 1800 V I DAV = 117 A I FSM = 500 A 3~ Rectifier Bridge, half-controlled (high-side) + free wheeling Diode Part number MCMA120UJ1800ED Backside: isolated 17 15 12 18 16 13 10 / 11 19 / 20 2/3 4/5 6/7 21 / 22 Pin 1 & 14 n.c. 8/9 Features / Advantages: Applications: Package: ● Thyristor/Standard Rectifier for line frequency ● Planar passivated chips ● Long-term stability ● Low forward voltage drop ● Leads suitable for PC board soldering ● Copper base plate with Direct Copper Bonded Al2O3-ceramic ● Improved temperature and power cycling ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Housing: E2-Pack IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved ●_International standard package ●_RoHS compliant ●_Isolation voltage: 3600 V~ ●_Advanced power cycling Data according to IEC 60747and per semiconductor unless otherwise specified 20120402a MCMA120UJ1800ED preliminary Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C max. 1900 Unit V VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1800 V I R/D reverse current, drain current VR/D = 1800 V TVJ = 25°C 50 µA VR/D = 1800 V TVJ = 125°C 10 mA TVJ = 25°C 1.33 V 1.70 V 1.36 V VT IT = forward voltage drop 40 A IT = 80 A IT = 40 A bridge output current IT = 80 A VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing 1.88 V T VJ = 150 °C 117 A TVJ = 150 °C 0.89 V d=⅓ for power loss calculation only Ptot typ. TVJ = 125 °C TC = 80°C I DAV I²t min. W t = 10 ms; (50 Hz), sine TVJ = 45°C 500 A t = 8,3 ms; (60 Hz), sine VR = 0 V 540 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 425 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 460 t = 10 ms; (50 Hz), sine TVJ = 45°C 1.25 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.22 kA²s TVJ = 150 °C 905 A²s 880 A²s VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 18 t P = 300 µs average gate power dissipation K/W 190 t = 8,3 ms; (60 Hz), sine critical rate of rise of current K/W 0.10 junction capacitance (di/dt) cr mΩ 0.65 TC = 25°C CJ PGAV 13.6 TVJ = 150°C; f = 50 Hz repetitive, IT = 120 A pF 10 W 5 W 0.5 W 100 A/µs t P = 200 µs; di G /dt = 0.45 A/µs I G = 0.45 A; VD = ⅔ VDRM non-repet., IT = 40 A 500 A/µs TVJ = 150 °C 1000 V/µs (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.4 TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 70 mA TVJ = -40 °C 150 mA TVJ = 150 °C 0.2 V 5 mA TVJ = 25 °C 150 mA VD = ⅔ VDRM R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM t p = 10 µs V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 40 A; VD = ⅔ VDRM TVJ = 150 °C di/dt = 10 A/µs; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 500 µs 20 V/µs; t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20120402a MCMA120UJ1800ED preliminary Package Ratings E2-Pack Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. max. 200 Unit A -40 125 °C -40 150 °C 6 Nm Weight 176 MD mounting torque VISOL isolation voltage d Spp/App d Spb/Apb 3 3600 V t = 1 minute 3000 V terminal to terminal 6.0 mm terminal to backside 12.0 mm creepage distance on surface | striking distance through air Part number M C M A 120 UJ 1800 ED XXXXXXXXXX yywwx Logo UL Part number Date Code Location Ordering Standard Part Number MCMA120UJ1800ED Equivalent Circuits for Simulation V0 R0 Marking on Product MCMA120UJ1800ED * on die level = = = = = = = = Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] 3~ Rectifier Bridge, half-controlled (high-side) + free wheeling Diode Reverse Voltage [V] E2-Pack Delivery Mode Box Quantity 6 Code No. 510125 T VJ = 150°C Thyristor V 0 max threshold voltage 0.89 V R 0 max slope resistance * 10.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved g t = 1 second 2D Data Matrix I typ. Data according to IEC 60747and per semiconductor unless otherwise specified 20120402a MCMA120UJ1800ED preliminary Outlines E2-Pack Dimmensions w/o tolerances acc. DIN ISO 2768-T1-m 17 15 12 18 16 13 10 / 11 19 / 20 2/3 4/5 6/7 21 / 22 Pin 1 & 14 n.c. IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 8/9 Data according to IEC 60747and per semiconductor unless otherwise specified 20120402a