VUO52-08NO1 3~ Rectifier Standard Rectifier Module VRRM = 800 V I DAV = 60 A I FSM = 350 A 3~ Rectifier Bridge Part number VUO52-08NO1 4/5 6 8 10 1/2 Features / Advantages: Applications: Package: V1-A-Pack ● Package with DCB ceramic ● Reduced weight ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130305b VUO52-08NO1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 900 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 800 V IR reverse current, drain current VF VR = 800 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.13 V 1.44 V 1.07 V 20 A IF = 60 A IF = 20 A IF = 60 A TVJ = 125°C TC = 110°C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.50 V T VJ = 150 °C 60 A TVJ = 150 °C 0.83 V d=⅓ for power loss calculation only Ptot typ. VR = 800 V IF = forward voltage drop min. 11.5 mΩ 1.3 K/W 0.3 K/W TC = 25°C 95 W t = 10 ms; (50 Hz), sine TVJ = 45°C 350 A t = 8,3 ms; (60 Hz), sine VR = 0 V 380 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 320 A t = 10 ms; (50 Hz), sine TVJ = 45°C 615 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 600 A²s TVJ = 150 °C 450 A²s 425 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 10 pF 20130305b VUO52-08NO1 Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 100 Unit A -40 125 °C -40 150 °C 2.5 Nm Weight MD 37 2 mounting torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage t = 1 minute g 50/60 Hz, RMS; IISOL ≤ 1 mA Date Code Location yywwA Part Number (Typ) Lot No.: 2D Data Matrix Ordering Standard Part Number VUO52-08NO1 Similar Part VUO52-12NO1 VUO52-14NO1 VUO52-16NO1 VUO52-18NO1 VUO52-20NO1 VUO52-22NO1 VUO34-16NO1 VUO34-18NO1 Equivalent Circuits for Simulation I V0 R0 Marking on Product VUO52-08NO1 Package V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack * on die level Delivery Mode Box Code No. 461164 Voltage class 1200 1400 1600 1800 2000 2200 1600 1800 T VJ = 150°C Rectifier V 0 max threshold voltage 0.83 V R 0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130305b VUO52-08NO1 Outlines V1-A-Pack 4/5 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 6 8 10 1/2 Data according to IEC 60747and per semiconductor unless otherwise specified 20130305b VUO52-08NO1 Rectifier 80 300 60 250 50 Hz 0.8 x V RRM 1000 VR = 0 V TVJ = 45°C IF 2 It IFSM TVJ = 45°C 200 40 [A] [A] 2 [A s] TVJ = 130°C TVJ = 130°C TVJ = 125°C 150°C 20 150 TVJ = 25°C 0 0.4 0.8 1.2 1.6 100 10-3 2.0 100 10-2 10-1 100 1 10 VF [V] t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I t versus time per diode 30 20 Ptot 80 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 25 2 DC = 0.6 KW 1 0.8 KW 15 1 KW 2 KW 4 KW 8 KW 60 0.4 IF(AV)M [A] [W] 0.5 0.33 0.17 40 0.08 10 20 5 0 0 0 5 10 15 20 25 0 25 50 75 100 125 0 150 25 50 TA [°C] IdAVM [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 1.6 Constants for ZthJC calculation: 1.2 ZthJC 0.8 [K/W] 0.4 i Rth (K/W) ti (s) 1 0.06070 0.008 2 0.173 0.05 3 0.3005 0.06 4 0.463 0.3 5 0.3028 0.15 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130305b