VUO68-08NO7 3~ Rectifier Standard Rectifier Module VRRM = 800 V I DAV = 70 A I FSM = 300 A 3~ Rectifier Bridge Part number VUO68-08NO7 K N H A D Features / Advantages: Applications: Package: ECO-PAC1 ● Package with DCB ceramic ● Reduced weight ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 9 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130322a VUO68-08NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 900 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 800 V IR reverse current, drain current VF VR = 800 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.15 V 1.50 V 1.12 V 20 A IF = 60 A IF = 20 A IF = 60 A TVJ = 125°C TC = 105°C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.39 V T VJ = 150 °C 70 A TVJ = 150 °C 0.82 V d=⅓ for power loss calculation only Ptot typ. VR = 800 V IF = forward voltage drop min. 12.2 mΩ 1.1 K/W 0.4 K/W TC = 25°C 110 W t = 10 ms; (50 Hz), sine TVJ = 45°C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45°C 450 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 440 A²s TVJ = 150 °C 325 A²s 315 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 10 pF 20130322a VUO68-08NO7 Package Ratings ECO-PAC1 Symbol I RMS Definition Conditions RMS current per terminal min. Tstg storage temperature T VJ virtual junction temperature mounting torque 1.5 typ. max. 100 Unit A -40 125 °C -40 150 °C 2 Nm Weight MD d Spp/App d Spb/Apb VISOL 24 creepage distance on surface | striking distance through air terminal to terminal 6.0 mm terminal to backside 10.0 mm 3600 V 3000 V t = 1 second isolation voltage t = 1 minute g 50/60 Hz, RMS; IISOL ≤ 1 mA Logo Made in Germany YYCW Lot# XXX XX-XXXXX Part Number Circuit Diagram Date Code Ordering Standard Part Number VUO68-08NO7 Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Box Quantity 25 Code No. 483303 T VJ = 150°C Rectifier V 0 max threshold voltage 0.82 R 0 max slope resistance * 11 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Marking on Product VUO68-08NO7 V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20130322a VUO68-08NO7 Outlines ECO-PAC1 K IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved N H A D Data according to IEC 60747and per semiconductor unless otherwise specified 20130322a VUO68-08NO7 Rectifier 80 300 60 250 IF 50 Hz 0.8 x V RRM 1000 VR = 0 V 2 IFSM It TVJ = 45°C 200 40 [A] [A] TVJ = 45°C 2 [A s] TVJ = 150°C 150 20 TVJ = 125°C 150°C 0 0.4 TVJ = 25°C 0.8 1.2 1.6 TVJ = 150°C 100 10-3 2.0 100 10-2 10-1 10 t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I t versus time per diode 30 25 2 100 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 35 DC = 0.6 KW 0.8 KW 20 [W] 1 VF [V] 40 Ptot 100 1 KW 2 KW 4 KW 8 KW 0.5 0.4 IF(AV)M60 0.33 0.17 [A] 15 1 80 0.08 40 10 20 5 0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 0 150 25 50 TA [°C] IdAVM [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 1.2 1.0 Constants for ZthJC calculation: 0.8 ZthJC 0.6 [K/W] 0.4 0.2 i Rth (K/W) ti (s) 1 0.05070 0.004 2 0.163 0.0025 3 0.2805 0.0035 4 0.363 0.02 5 0.2228 0.15 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130322a