VBO52-12NO7 3~ 1~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 60 A I FSM = 550 A 1~ Rectifier Bridge Part number VBO52-12NO7 - ~ ~ + Features / Advantages: Applications: Package: PWS-D ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For one phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Industry standard outline ● RoHS compliant ● Easy to mount with two screws ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130415a VBO52-12NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 V IR reverse current VF VR = 1200 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.07 V 1.19 V 0.96 V 20 A IF = 40 A IF = 20 A IF = 40 A TVJ = 125 °C TC = 115°C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.13 V T VJ = 150 °C 60 A TVJ = 150 °C 0.78 V d = 0.5 for power loss calculation only Ptot typ. VR = 1200 V IF = forward voltage drop min. 8.1 mΩ 1.1 K/W 0.4 K/W TC = 25°C 110 W t = 10 ms; (50 Hz), sine TVJ = 45°C 550 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 470 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 505 t = 10 ms; (50 Hz), sine TVJ = 45°C 1.52 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.48 kA²s TVJ = 150 °C 1.11 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 1.06 kA²s 19 pF 20130415a VBO52-12NO7 Package Ratings PWS-D Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. max. 150 Unit A -40 125 °C -40 150 °C Weight typ. 153 MD mounting torque MT terminal torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute Made in Germany Product Number 4.25 5.75 4.25 5.75 Nm Nm terminal to terminal 9.5 mm terminal to backside 26.0 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Circuit Diagram XXXX-XXXX YYCW Lot# Date Code Ordering Standard Part Number VBO52-12NO7 Equivalent Circuits for Simulation I V0 R0 Marking on Product VBO52-12NO7 * on die level Delivery Mode Box Code No. 472344 T VJ = 150 °C Rectifier V 0 max threshold voltage 0.78 V R 0 max slope resistance * 6.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130415a VBO52-12NO7 Outlines PWS-D - IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved ~ ~ + Data according to IEC 60747and per semiconductor unless otherwise specified 20130415a VBO52-12NO7 Rectifier 500 100 50 Hz 0.8 x V RRM 10000 VR = 0 V 80 400 60 IF 2 IFSM It TVJ = 45°C TVJ = 45°C 1000 [A] [A] 40 2 [A s] 300 TVJ = 150°C TVJ = 150°C TVJ = 125°C 150°C 20 0 0.4 TVJ = 25°C 0.8 1.2 200 0.001 1.6 100 0.010 0.100 Fig. 1 Forward current vs. voltage drop per diode 10 t [ms] 2 Fig. 3 I t vs. time per diode Fig. 2 Surge overload current vs. time per diode 30 100 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 Ptot 1 t [s] VF [V] 20 1.000 DC = 0.6 KW 0.8 KW [W] 1 KW 2 KW 4 KW 8 KW 0.5 0.4 60 0.33 IF(AV)M Graph 1* 10 1 80 0.17 0.08 40 [A] 20 0 0 0 10 20 0 25 50 75 100 125 150 0 175 25 50 TA [°C] IdAVM [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1.2 Constants for ZthJC calculation: 0.8 ZthJC [K/W] 0.4 i Rth (K/W) ti (s) 1 0.05 0.001 2 0.14 0.030 3 0.25 0.060 4 0.35 0.130 5 0.31 0.920 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130415a