MIXD80PM650TMI

MIXD80PM650TMI
IGBT Modules
Multi Level
IC80 (T1/T4) = 82A
IC80 (T2/T3) = 110A
VCES
= 650V
VCE(sat) typ.= 1.5V
XPT IGBT Technology
Part name (Marking on product)
MIXD80PM650TMI
+
Th1
D1
G1
Th2
T1
E1
e
NTC
D5
D2
T2
iv
G2
N
E2
G3
U
D3
T3
E3
t
D6
G4
D4
T4
E4
a
_
Features:
Package:
•AC motor control
•AC servo and robot drives
•UPS
•Solar
•Compatible to EASY2B package
•Pins for pressfit connection
•With DCB base
t
e
n
t
•Easy paralleling due to the positive temperature coefficient of the on-state voltage
•Rugged XPT design
(Xtreme light Punch Through) results in:
-short circuit rated for 10 µsec.
-very low gate charge
-square RBSOA @ 2x IC
-low EMI
•Thin wafer technology combined with the XPT design results in a competitive low VCE(sat)
•SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
•Optimized for solar applications
- T2/T3 re-inforced
Application:
IXYS reserves the right to change limits, test conditions and dimensions.
© 2014 IXYS All rights reserved
20140129
1-5
MIXD80PM650TMI
IGBTs T1 / T4
Ratings
Symbol
Definitions
Conditions
min.
VCES
collector emitter voltage
VGES
max. DC gate voltage
continuous
IC25
IC80
collector current
TC = 25°C
TC = 80°C
typ.
TVJ = 25°C
max.
Unit
650
V
±20
V
108
82
A
A
Ptot
total power dissipation
TC = 25°C
VCE(sat)
collector emitter saturation voltage
IC = 75 A; VGE = 15 V
TVJ= 25°C
TVJ=150°C
VGE(th)
gate emitter threshold voltage
IC = 1.2 mA; VGE = VCE
TVJ= 25°C
ICES
collector emitter leakage current
VCE = VCES; VGE = 0 V
TVJ= 25°C
IGES
gate emitter leakage current
VCE = 0 V; VGE = ±20 V
Cies
input capacitance
VCE = 25 V; VGE = 0 V; f = 1 MHz
tbd
nF
QG(on)
total gate charge
VGE = 0...15 V
130
nC
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
inductive load
VCE = 300 V; IC = 75 A
VGE = ±15 V; RG = 10 W
25
45
120
40
0.9
1.8
tbd
ns
ns
ns
ns
mJ
mJ
mJ
ICM
VCEK
reverse bias safe operating area
RthJC
thermal resistance junction to case
(per IGBT)
RthCH
thermal resistance case to heatsink
(per IGBT)
VRRM
max. repetitive reverse voltage
IF25
IF80
forward current
Symbol
Conditions
t
n
forward voltage
5.8
6.5
V
250
µA
500
nA
150
VCES
A
V
10
µs
A
0.55
K/W
300
0.18
K/W
Maximum Ratings
TC = 25°C
TC = 80°C
650
V
73
53
A
A
Characteristic Values
min.
IF = 75 A
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery losses at turn-off
VR = 300 V; IF = 75 A
diF /dt = -1200 A/µs
RthJC
thermal resistance junction to case
(per diode)
RthCH
thermal resistance case to heatsink
(per diode)
TVJ = 25°C
TVJ = 150°C
TVJ=150°C
typ.
max.
1.7
1.8
2.0
7
65
150
1.5
µC
A
ns
mJ
1.0
0.35
V
V
K/W
K/W
t
e
TVJ = 150°C
Conditions
a
Definitions
QRR
IRM
trr
Erec(off)
TVJ=150°C
e
iv
VCE = 360 V; VGE = ±15 V;
RG = 10 W; non-repetitive
Symbol
V
V
20
t
short circuit safe operating area
Diodes D1 - D4
W
1.7
RBSOA; VGE = ±15 V; RG = 10 W; L = 100 µH
clamped inductive load; TVJ=150°C
tSC
(SCSOA)
VF
5.0
275
1.5
1.75
IXYS reserves the right to change limits, test conditions and dimensions.
© 2014 IXYS All rights reserved
20140129
2-5
MIXD80PM650TMI
IGBTs T2 / T3
Ratings
Symbol
Definitions
Conditions
min.
VCES
collector emitter voltage
VGES
max. DC gate voltage
continuous
IC25
IC80
collector current
TC = 25°C
TC = 80°C
typ.
TVJ = 25°C
max.
Unit
650
V
±20
V
147
110
A
A
Ptot
total power dissipation
TC = 25°C
VCE(sat)
collector emitter saturation voltage
IC = 100 A; VGE = 15 V
TVJ= 25°C
TVJ=150°C
VGE(th)
gate emitter threshold voltage
IC = 1.6 mA; VGE = VCE
TVJ= 25°C
ICES
collector emitter leakage current
VCE = VCES; VGE = 0 V
TVJ= 25°C
IGES
gate emitter leakage current
VCE = 0 V; VGE = ±20 V
Cies
input capacitance
VCE = 25 V; VGE = 0 V; f = 1 MHz
tbd
nF
QG(on)
total gate charge
VGE = 0...15 V
180
nC
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
inductive load
VCE = 300 V; IC = 100 A
VGE = ±15 V; RG = 8.2 W
25
45
120
40
2
2.4
tbd
ns
ns
ns
ns
mJ
mJ
mJ
ICM
VCEK
reverse bias safe operating area
TVJ=150°C
e
iv
VCE = 360 V; VGE = ±15 V;
RG = 8.2 W; non-repetitive
RthJC
thermal resistance junction to case
(per IGBT)
RthCH
thermal resistance case to heatsink
(per IGBT)
Definitions
TVJ = 150°C
VRRM
max. repetitive reverse voltage
IF25
IF80
forward current
Symbol
Conditions
5.8
6.5
V
t
250
µA
500
nA
200
VCES
A
V
10
µs
A
0.40
K/W
400
0.13
Conditions
a
Symbol
V
V
20
t
short circuit safe operating area
Diodes D5 / D6
W
1.7
RBSOA; VGE = ±15 V; RG = 8.2 W; L = 100 µH
clamped inductive load; TVJ=150°C
tSC
(SCSOA)
VF
5.0
375
1.5
1.75
K/W
Maximum Ratings
TC = 25°C
TC = 80°C
650
V
114
83
A
A
Characteristic Values
min.
typ.
max.
IF = 100 A
TVJ = 25°C
TVJ = 150°C
1.7
1.8
2.0
V
V
leakage current
VR = 650 V
TVJ = 25°C
20
200
µA
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery losses at turn-off
VR = 300 V; IF = 100 A
diF /dt = -1500 A/µs
RthJC
thermal resistance junction to case
(per diode)
RthCH
thermal resistance case to heatsink
(per diode)
t
e
QRR
IRM
trr
Erec(off)
n
IR
forward voltage
IXYS reserves the right to change limits, test conditions and dimensions.
© 2014 IXYS All rights reserved
TVJ=150°C
9.5
95
150
2.5
µC
A
ns
mJ
0.6
0.2
K/W
K/W
20140129
3-5
MIXD80PM650TMI
Module
Symbol
Definitions
Conditions
min.
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
VISOL
isolation voltage
IISOL < 1 mA; 50/60 Hz
Md
mounting torque
(M4)
dS
dA
creep distance on surface
strike distance through air
Unit
150
175
125
°C
°C
°C
2500
V~
-40
-40
2.0
2.2
11.5
10.0
Weight
Rpin-chip
Ratings
typ. max.
V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF
resistance pin to chip
Nm
mm
mm
40
g
6
mW
Equivalent Circuits for Simulation
I
Ratings
V0
Symbol
Definitions
Conditions
V0
R0
IGBT T1/T4
TVJ = 175°C
V0
R0
IGBT T2/T3
TVJ = 175°C
V0
R0
Diode D1/D4
V0
R0
Diode D5/D6
Definitions
R25
B25/50
resistance
min.
typ.
max.
Unit
V
mW
0.8
12
V
mW
TVJ = 175°C
1.2
12
V
mW
TVJ = 175°C
1.2
9
V
mW
iv
0.8
16
t
Temperature Sensor NTC
Symbol
e
R0
Conditions
min.
TC = 25°C
a
4.75
Ratings
typ. max.
5.0
3375
5.25
Unit
kW
K
t
105
t
e
n
104
R
[Ω]
103
102
0
25
50
75
100
T C [°C ]
150
Typ. NTC resistance vs. temperature
IXYS reserves the right to change limits, test conditions and dimensions.
© 2014 IXYS All rights reserved
125
20140129
4-5
MIXD80PM650TMI
Outline Drawing
12 ±0.35
16.4 ±0.5
Dimensions in mm (1 mm = 0.0394“)
1.4 ±0.5
51 ±0.1
48
44.8
38.4
62.8 ±0.5
53 ±0.1
48 ±0.3
42 ±0.15
41.6
32
28.8
25.6
22.4
19.2
16.4±0.2
iv
3.2
t
16
E2
G3
U
D3
T3
E3
D6
E3'
U
U
U
U
U
U
U
U
G2
E2
T1
E1
T2
G1
N
t
N
T2
a
G2
D2
28.8
D5
25.6
E1
32
Th2
12.8
D1
T1
G3
6.4
+
G1
9.6
3.2
56.7 ±0.3
NTC
12.8
2.3 -0.1 x 8.5 +0.3
22.7 ±0.5
Th1
e
16
E4
G4
N
N
N
N
N
D4
T4
n
G4
E4
_
Ø 0.4
e
Pin positions with tolerance
t
Product Marking
Ordering
Part Name
Standard
MIXD80PM650TMI
Marking on Product Delivering Mode Base Qty Ordering Code
MIXD80PM650TMI
IXYS reserves the right to change limits, test conditions and dimensions.
© 2014 IXYS All rights reserved
Blister
20
514219
20140129
5-5