MWI150-12T8T Six-Pack Trench IGBT VCES =1200 V IC25 = 215 A VCE(sat) = 1.7 V Part name (Marking on product) MWI150-12T8T 16, 17, 18 30, 31, 32 19 10 6 2 27 28 29 NTC 9 5 1 24 25 26 21 22 23 E 72873 20 3 7 11 4 8 12 Pin configuration see outlines. 13, 14, 15 33, 34, 35 Features: Application: Package: •Trench IGBT technology •low saturation voltage •low switching losses •square RBSOA, no latch up •high short circuit capability •positive temperature coefficient for easy parallelling •MOS input, voltage controlled •ultra fast free wheeling diodes •solderable pins for PCB mounting •package with copper base plate •AC motor drives •Solar inverter •Medical equipment •Uninterruptible power supply •Air-conditioning systems •Welding equipment •Switched-mode and resonant-mode power supplies •"E3-Pack" standard outline •Insulated copper base plate •Soldering pins for PCB mounting •Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20081209b 1-7 MWI150-12T8T Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. typ. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 215 150 A A TC = 25°C 690 W collector emitter saturation voltage IC = 150 A; VGE = 15 V TVJ= 25°C TVJ=125°C 1.7 2.0 2.1 V V VGE(th) gate emitter threshold voltage IC = 6 mA; VGE = VCE TVJ= 25°C 5.8 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C 6 mA mA IGES gate emitter leakage current VGE = ±20 V 500 nA Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 150 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 150 A VGE = ±15 V; RG = 2.4 W LS = 70 nH RBSOA reverse bias safe operating area VGE = ±15 V; RG = 2.4 W; SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±15 V; RG = 2.4 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ= 25°C 5.0 2 TVJ=125°C 10770 pF 860 nC 270 50 500 340 15.5 20 ns ns ns ns mJ mJ TVJ=125°C VCEK = 1200 V TVJ = 125°C 300 A 10 µs A 0.18 K/W 600 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -2900 A/µs IF = 150 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) min. typ. max. Unit TVJ= 25°C 1200 V TC = 25°C TC = 80°C 196 132 A A IF = 150 A; VGE = 0 V TVJ= 25°C TVJ=125°C 1.95 1.85 2.2 V V TVJ=125°C 20 160 320 7 µC A ns mJ 0.28 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20081209b 2-7 MWI150-12T8T Temperature Sensor NTC Symbol R25 B25/50 Definitions resistance Conditions Definitions Conditions TC = 25°C min. 4.75 Ratings typ. max. 5.0 5.25 3375 Unit kW K min. -40 Ratings typ. max. 125 150 125 Unit °C °C °C 2500 V~ Module Symbol TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage -40 IISOL < 1 mA; 50/60 Hz CTI comparative tracking index Md mounting torque (M5) 2.7 dS dA creep distance on surface strike distance through air 10 7.5 Rpin-chip resistance pin to chip RthCH thermal resistance case to heatsink - with heatsink compound 3.3 Nm mm mm 2.5 mW 0.02 K/W 300 g Weight 0.0 Equivalent Circuits for Simulation I R0 V0 Symbol Ratings Definitions V0 R0 IGBT V0 R0 Diode R1 R2 C1 Conditions R3 C2 C3 max. Unit 1.0 6.7 V mW D1 - D6 TVJ=125°C 1.15 4.7 V mW Zth( t) = C4 typ. TVJ=125°C n R4 min. T1 - T6 ∑ i =1 t τi R i 1 − exp − τi = Ri⋅ Ci IGBT Diode R1 R2 0.0267 0.0309 0.054 0.05 R3 R4 0.061 0.0614 0.096 0.08 t1 t2 0.0025 0.076 0.0025 0.076 t3 t4 0.036 0.076 0.036 0.076 TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20081209b 3-7 MWI150-12T8T Circuit Diagram 16, 17, 18 30, 31, 32 1 19 2 20 10 6 27 28 29 NTC 9 5 24 25 26 21 22 23 3 7 11 4 8 12 13, 14, 15 33, 34, 35 Outline Drawing Dimensions in mm (1 mm = 0.0394“) Product Marking Ordering Part Name Marking on Product Standard MWI150-12T8T MWI150-12T8T IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 5 502301 20081209b 4-7 MWI150-12T8T Inverter T1 - T6 300 300 25 °C 280 Vge= 17V 260 Vge= 15V 240 240 Vge= 13V 220 220 Vge= 11V 200 200 Vge= 9V 180 180 160 160 Ic [A] Ic [A] 260 Vge= 19V 280 125 °C 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 3.5 0.5 1.0 1.5 Typ. output characteristics 300 25 °C 3.0 3.5 4.0 4.5 5.0 125 °C 25 °C 260 240 240 220 220 200 200 180 180 160 160 If [A] Ic [A] 280 125 °C 260 2.5 Typ. output characteristics 300 280 2.0 Vce [V] Vce [V] 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 5 6 7 8 9 10 11 12 13 Vge [V] Typ. tranfer characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Vf [V] Typ. tranfer characteristics 20081209b 5-7 MWI150-12T8T 26 40 Eon Eon 24 Eoff Erec Eoff 22 Erec 20 30 18 E [mJ] E [mJ] 16 20 14 12 10 8 10 6 4 2 0 0 0 25 50 75 100 125 150 175 200 225 250 275 300 325 0 1 2 3 4 Ic, If [A] 5 6 7 8 9 10 11 12 Rg [W ] Typ. switching energy vs. collector current Typ. switching energy vs. gate resistance 20 220 400 Irr 19 18 trr 17 10W 16 15 200 380 14 180 360 5.6W 9 8 7 trr [ns] 11 10 Irr [A] Vge [V] 13 12 2.4W 160 340 6 5 4 140 320 3 2.4W 5.6W 2 1 10W 0 0 200 400 600 800 1000 1200 Qg [nC] Typ. turn-on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 120 1800 2000 2200 2400 2600 2800 300 3000 dif/dt [A/µs] Reverse recovery characteristics 20081209b 6-7 MWI150-12T8T 30 Vce = 600V, Vge = +/-15V, Rg = 2.4W , Tvj = 125°C 1 Zth(j-c) - igbt 28 Zth(j-c) - frd 26 24 22 20 Zth(j-c) [K/W] Qrr [µC] 18 16 14 12 0.1 10 8 6 4 2 0 0 0.01 0.001 25 50 75 100 125 150 175 200 225 250 275 300 325 If [A] 0.01 0.1 1 10 tp [s] Typ. transient thermal impedance Reverse recovery characteristics NTC 100000 R [W] 10000 1000 100 0 25 50 75 100 125 150 Tc [°C] Typ. NTC resistance versus temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20081209b 7-7