MIXA450PF1200TSF

MIXA450PF1200TSF
XPT IGBT Module
VCES
= 2x 1200 V
I C25
=
650 A
VCE(sat) =
1.8 V
Phase leg + free wheeling Diodes + NTC
Part number
MIXA450PF1200TSF
Backside: isolated
5
2
1
8
7
4
3
6
9
10/11
Features / Advantages:
Applications:
Package: SimBus F
● High level of integration - only one
power semiconductor module required
for the whole drive
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● Temperature sense included
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● AC motor drives
● Pumps, Fans
● Air-conditioning system
● Inverter and power supplies
● UPS
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121026a
MIXA450PF1200TSF
Ratings
IGBT
Symbol
VCES
Definition
collector emitter voltage
VGES
max. DC gate voltage
VGEM
max. transient gate emitter voltage
I C25
collector current
Conditions
min.
TVJ =
typ.
25°C
TC = 25°C
I C80
2.15
V
6.5
V
1
mA
gate emitter threshold voltage
I C = 18 mA; VGE = VCE
TVJ = 25°C
I CES
collector emitter leakage current
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 25°C
1.8
5.4
5.9
gate emitter leakage current
VGE = ±20 V
Q G(on)
total gate charge
VCE = 600 V; VGE = 15 V; IC = 450 A
t d(on)
turn-on delay time
tr
current rise time
t d(off)
turn-off delay time
tf
current fall time
Eon
turn-on energy per pulse
Eoff
turn-off energy per pulse
RBSOA
reverse bias safe operating area
1.5
TVJ = 125 °C
600 V; IC = 450 A
VGE = ±15 V; R G = 1.6 Ω
short circuit duration
VCE = 900 V; VGE = ±15 V
R G = 1.6 Ω; non-repetitive
I SC
short circuit current
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
µA
1400
nC
85
ns
80
ns
310
ns
360
ns
22
mJ
68
mJ
TVJ = 125 °C
VCEmax = 1200 V
t SC
mA
6
TVJ = 125 °C
I GES
V
2.15
TVJ = 125 °C
VCEmax = 1200 V
A
A
VGE(th)
short circuit safe operating area
V
W
I C = 450 A; VGE = 15 V
I CM
±30
650
450
collector emitter saturation voltage
SCSOA
V
2100
VCE(sat)
VGE = ±15 V; R G = 1.6 Ω
±20
TC = 25°C
total power dissipation
VCE =
Unit
V
TC = 80 °C
Ptot
inductive load
max.
1200
TVJ = 125 °C
900
A
10
µs
A
1900
0.06 K/W
K/W
0.03
Diode
VRRM
max. repetitive reverse voltage
TVJ = 25°C
1200
V
I F25
forward current
TC = 25°C
380
A
TC = 80 °C
265
A
TVJ = 25°C
2.30
V
*
mA
I F 80
VF
forward voltage
I F = 450 A
IR
reverse current
VR = VRRM
TVJ = 125°C
* not applicable, see Ices value above
Q rr
reverse recovery charge
I RM
max. reverse recovery current
t rr
reverse recovery time
E rec
reverse recovery energy
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
TVJ = 25°C
*
mA
62
µC
425
A
TVJ = 125°C
VR = 600 V
-di F /dt = 5400 A/µs
IF = 450 A; VGE = 0 V
TVJ = 125°C
V
2.00
360
ns
26
mJ
0.095 K/W
0.04
Data according to IEC 60747and per semiconductor unless otherwise specified
K/W
20121026a
MIXA450PF1200TSF
Package
Ratings
SimBus F
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
Tstg
storage temperature
-40
125
°C
T VJ
virtual junction temperature
-40
150
°C
Weight
mounting torque
MT
terminal torque
d Spb/Apb
VISOL
XXX XX-XXXXX
UL
Part number
Ordering
Standard
6
3
6
Nm
Nm
mm
terminal to backside
10.0
mm
3000
V
50/60 Hz, RMS; IISOL ≤ 1 mA
2D Data Matrix
Logo
3
2500
V
0.65
V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF
resistance pin to chip
g
12.7
t = 1 second
t = 1 minute
Unit
A
terminal to terminal
creepage distance on surface | striking distance through air
isolation voltage
R pin-chip
max.
350
MD
d Spp/App
typ.
mΩ
Part number
M
I
X
A
450
PF
1200
T
SF
YYWWx
Date Code Location
Part Number
MIXA450PF1200TSF
=
=
=
=
=
=
=
=
=
Module
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Phase leg + free wheeling Diodes
Reverse Voltage [V]
Thermistor \ Temperature sensor
SimBus F
Marking on Product
MIXA450PF1200TSF
Delivery Mode
Box
Quantity
3
Code No.
511202
105
Temperature Sensor NTC
Symbol
Definition
Conditions
R 25
resistance
TVJ = 25°
B 25/50
temperature coefficient
typ.
min.
5
4.75
max.
Unit
5.25
kΩ
3375
K
104
R
[ ]
103
Equivalent Circuits for Simulation
I
V0
R0
T VJ = 150 °C
* on die level
IGBT
Diode
102
0
V 0 max
threshold voltage
1.1
1.25
V
R 0 max
slope resistance *
3.1
1.9
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
25
50
75
100
TC [°C]
125
150
Typ. NTC resistance vs. temperature
Data according to IEC 60747and per semiconductor unless otherwise specified
20121026a
MIXA450PF1200TSF
Outlines SimBus F
9
0,46
0
3,75
65
87
4
R2,5
50
22
57,5
10
62
0,8
11,06
7,25
0
7,75
37,73
33,92
87,26
64,4
60,59
17
20,5
1,2
3
11
12
57,96
94,5
110
122
137
152
5
2
1
8
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
9
4
3
6
7
10/11
Data according to IEC 60747and per semiconductor unless otherwise specified
20121026a
MIXA450PF1200TSF
IGBT
VGE = 15 V
13 V
VGE = 15 V
17 V
19 V
800
800
800
11 V
600
600
IC
600
IC
TVJ = 25°C
400
TVJ = 125°C
[A]
IC
400
400
9V
[A]
[A]
TVJ = 125°C
200
200
200
TVJ = 125°C
TVJ = 25°C
0
0
0
1
2
0
0
3
1
2
3
4
5
70
20
15
tr
150
E 40
75t
[ns]
20
E
t
80
0
1600
200
400
600
800
0
1000
250
IC = 450 A
VCE = 600 V
80 VGE = ±15 V
TVJ = 125°C
0.06
ZthJC
E
0.04
[K/W]
0.00
0.001
[mJ]
Ri
0.0093
0.0095
0.02
0.0212
0.1
ti
0.002
0.03
0.03
0.08
1
40
Fig. 7 Typ. trans. therm. impedance
150
2
1000
700
Eoff
t
[mJ]
50
4
6
8
0
10
600
td(off)
IC = 450 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
Eoff
100
[ns]
Eon
0
800
80
40
Erec(on)
10
600
60
tr
20
400
Fig. 6 Typ. switching energy
versus gate resistance
200
60
t
500
[ns]
20
400
tf
0
300
0
2
4
6
8
10
RG [ ]
RG [ ]
Fig. 8 Typ. turn-on energy, switching times
vs. gate resistor, inductive switching
Fig.9 Typ. turn-off energy, switching times
vs. gate resistor, inductive switching
t [s]
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
200
td(on)
0
0.01
0
0
IC [A]
100
0.02
0
Fig. 5 Typ. turn-on energy & switching times
vs. collector current, inductive switching
single pulse
200
tf
IC [A]
QG [nC]
Fig. 4 Typ. turn-on gate charge
[ns]
Eoff
0
1200
td(off)
25
Erec (off)
800
400
40
10
0
600
[mJ]
50
Eon
800
120
100
[mJ] 30
5
10 11 12 13
RG = 1.6
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
160
125
10
[V]
9
Fig. 3 Typ. transfer characteristics
td(on)
VGE
8
175
RG = 1.6
VCE = 600 V
60
VGE = ±15 V
50 TVJ = 125°C
IC = 450 A
VCE = 600 V
400
7
VGE [V]
Fig. 2 Typ. output characteristics
Fig. 1 Typ. output characteristics
0
6
VCE [V]
VCE [V]
Data according to IEC 60747and per semiconductor unless otherwise specified
20121026a
MIXA450PF1200TSF
Diode
500
550
If = 450 A
VR = 600 V
TVJ = 125°C
800
If = 450 A
VR = 600 V
TVJ = 125°C
10
1.6
500
400
600
Irr
IF
[A]
[ns]
300
TJ = 125°C
200
4.7
450
4.7
[A]
400
trr
3.3
10
3.3
400
TJ = 25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
200
3000
3.0
VF [V]
4000
5000
6000
350
3000
diF /dt [A/μs]
100
If = 450 A
VR = 600 V
26 T = 125°C
VJ
400
Qrr
24
Erec
60
Irr
22
[A]
40
6000
28
Rg = 1.6
VR = 600 V
TVJ = 125°C
[μC]
5000
diF /dt [A/μs]
500
Rg = 1.6
VR = 600 V
TVJ = 125°C
80
4000
Fig. 3 Typ. reverse recovery
characteristics
Fig. 2 Typ. reverse recovery
characteristics
Fig. 1 Typ. Forward current
versus VF
1.6
[mJ]
300
20
20
18
0
200
0
200
400
600
800
0
200
400
IF [A]
600
16
3000
800
Fig. 5 Typ. reverse recovery
characteristics
Fig. 4 Typ. reverse recovery
characteristics
4000
5000
diF /dt [A/μs]
IF [A]
Fig. 6 Typ. recovery energy
Erec versus -di/dt
0.10
0.08
ZthJC
0.06
single pulse
[K/W]
0.04
Ri
0.018
0.017
0.032
0.028
0.02
0.00
0.001
0.01
0.1
1
ti
0.002
0.03
0.03
0.08
10
t [s]
Fig. 7 Typ. transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121026a