MIXA30W1200TED Six-Pack XPT IGBT VCES =1200 V IC25 = 43 A VCE(sat)= 1.8 V Part name (Marking on product) MIXA30W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 NTC 23, 24 21, 22 19, 20 E 72873 18 3 4 7 11 8 12 Pin configuration see outlines. 13, 14 27, 28 Features: Application: Package: •Easy paralleling due to the positive temperature coefficient of the on-state voltage •Rugged XPT design (Xtreme light Punch Through) results in: -short circuit rated for 10 µsec. -very low gate charge -square RBSOA @ 3x IC -low EMI •Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) •SONIC™ diode - fast and soft reverse recovery - low operating forward voltage •AC motor drives •Solar inverter •Medical equipment •Uninterruptible power supply •Air-conditioning systems •Welding equipment •Switched-mode and resonant-mode power supplies •"E2-Pack" standard outline •Insulated copper base plate •Soldering pins for PCB mounting •Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100622b 1-6 MIXA30W1200TED Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. typ. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 43 30 A A TC = 25°C 150 W collector emitter saturation voltage IC = 25 A; VGE = 15 V TVJ= 25°C TVJ=125°C 1.8 2.1 2.1 V V VGE(th) gate emitter threshold voltage IC = 1 mA; VGE = VCE TVJ= 25°C 6.0 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C 0.01 0.2 2.1 mA mA IGES gate emitter leakage current VGE = ±20 V 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 25 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 39 W RBSOA reverse bias safe operating area VGE = ±15 V; RG = 39 W; SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±15 V; RG = 39 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ= 25°C 5.4 TVJ=125°C 76 nC 70 40 250 100 2.5 3.0 ns ns ns ns mJ mJ TVJ=125°C VCEK = 1200 V TVJ = 125°C 75 A 10 µs A 0.84 K/W 100 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage min. typ. max. Unit TVJ= 25°C 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 44 29 A A VF forward voltage IF = 30 A; VGE = 0 V TVJ= 25°C TVJ=125°C 1.95 1.95 2.2 V V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -600 A/µs IF = 30 A; VGE = 0 V TVJ=125°C 3.5 30 350 0.9 RthJC thermal resistance junction to case (per diode) µC A ns mJ 1.2 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100622b 2-6 MIXA30W1200TED Temperature Sensor NTC Symbol R25 B25/50 Definitions resistance Conditions Definitions Conditions TC = 25°C min. 4.75 Ratings typ. max. 5.0 5.25 3375 Unit kW K min. -40 Ratings typ. max. 125 150 125 Unit °C °C °C 2500 V~ Module Symbol TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index Md mounting torque (M5) dS dA creep distance on surface strike distance through air Rpin-chip resistance pin to chip RthCH thermal resistance case to heatsink -40 IISOL < 1 mA; 50/60 Hz 3 6 10 7.5 with heatsink compound Weight Nm mm mm 2.5 mW 0.02 K/W 180 g Equivalent Circuits for Simulation I V0 Symbol V0 R0 V0 R0 R0 Definitions IGBT Conditions T1 - T6 min. TVJ=150°C free wheeling diode D1 - D6 TVJ=150°C Ratings typ. max. 1.1 55 Unit V mW 1.2 27 V mW TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100622b 3-6 MIXA30W1200TED Circuit Diagram 15, 16 25, 26 17 1 5 9 2 6 10 3 7 11 4 8 12 23, 24 21, 22 19, 20 NTC 18 13, 14 27, 28 Outline Drawing Detail Y Detail X Ø 2.1; l=6 15° ±0.05 1.2 baseplate typ. 100 µm convex over 75 mm before mounting ±0.05 Ø 2.1 75.7 1.5 Ø 2.5 ±0.1 +0.3 Ø6 Detail Z 82.3 ±1° 0.8 7 -0.5 ±0.02 Z 0.8 Y 17±0.5 20.5 ±0.1 3.5-0.5 Dimensions in mm (1 mm = 0.0394“) B 20 19 22 21 6 86.1 76.98 16 15 27 28 14 13 93 107.5 1112 7.62 0 7.62 A 11.43 20.95 76.98 73.17 61.74 9 10 65.55 7 8 54.12 5 6 50.31 38.88 3 4 42.69 19.83 27.45 16.02 1 2 31.26 11 11.43 18 17 25 26 Ø5.5 ±0.2 45 20.95 X 24 23 38.4 32 ±0.2 73.17 57.93 61.74 38.88 42.69 23.64 0 19.83 72.7 j n0.4 A B ±0.2 ±0.3 Product Marking Part number M = Module I = IGBT X = XPT A = Standard 30 = Current Rating [A] W = Six-Pack 1200 = Reverse Voltage [V] T = NTC ED = E2-Pack Ordering Part Name Marking on Product Standard MIXA30W1200 TED MIXA30W1200TED IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 6 508635 20100622b 4-6 MIXA30W1200TED Inverter T1 - T6 50 50 VGE = 15 V 40 40 30 TVJ = 25°C IC IC TVJ = 125°C [A] 20 30 TVJ = 125°C 0 1 2 0 3 VCE [V] 0 1 2 4 5 80 100 20 IC = 25 A VCE = 600 V 40 15 IC 30 VGE 10 [V] 20 TVJ = 125°C 10 5 TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 20 40 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 6 4.0 Eon RG = 39 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 5 60 QG [nC] VGE [V] E 3 VCE [V] Fig. 2 Typ. output characteristics 50 0 9V 10 Fig. 1 Typ. output characteristics [A] 11 V [A] 20 10 0 13 V VGE = 15 V 17 V 19 V 3.5 3.0 Eoff 4 2.5 E [mJ] 3 [mJ] Eoff Eon IC = 25 A VCE = 600 V VGE = ±15 V TVJ = 125°C 2.0 1.5 2 1.0 1 0 0.5 0 10 20 30 40 50 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 0.0 20 40 60 80 100 120 140 160 RG [Ω] Fig. 6 Typ. switching energy vs. gate resistance 20100622b 5-6 MIXA30W1200TED Inverter D1 - D6 2.0 60 TVJ = 125°C VR = 600 V 50 1.6 60 A 40 IC 30 30 A 1.2 Erec [mJ] 0.8 [A] 15 A 20 TVJ = 125°C 10 0 0.4 TVJ = 25°C 0 1 2 0.0 300 400 500 600 700 800 900 1000 1100 3 VF [V] diF /dt [A/µs] Fig. 8 Typ. recovery energy Erec versus di/dt Fig. 7 Typ. forward characteristic IGBT 1 2 3 4 NTC 100000 10 10000 1 FRD Ri ti Ri ti 0.18 0.14 0.36 0.16 0.0025 0.03 0.03 0.08 0.3413 0.2171 0.3475 0.2941 0.0025 0.03 0.03 0.08 Diode IGBT R ZthJC [Ω] [K/W] 1000 100 0.1 0 25 50 75 100 125 150 TC [°C] Fig. 9 Typ. NTC resistance versus temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 10 Typ. transient thermal impedance 20100622b 6-6