DNA90YC2200NA 3~ Rectifier High Voltage Standard Rectifier VRRM = 2200 V I DAV = 90 A I FSM = 370 A Half 3~ Bridge, Common Cathode Part number DNA90YC2200NA Backside: isolated 1 2 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a DNA90YC2200NA Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 2300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 2200 V IR reverse current, drain current VR = 2200 V TVJ = 25°C 100 µA VR = 2200 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.23 V 1.70 V 1.21 V VF IF = forward voltage drop 30 A IF = 90 A IF = 30 A bridge output current IF = 90 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.85 V T VJ = 150 °C 90 A TVJ = 150 °C 0.86 V d=⅓ for power loss calculation only Ptot typ. TVJ = 125 °C TC = 85°C I DAV I²t min. 11.4 mΩ 1.2 K/W K/W 0.10 TC = 25°C 100 W t = 10 ms; (50 Hz), sine TVJ = 45°C 370 A t = 8,3 ms; (60 Hz), sine VR = 0 V 400 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 315 A t = 8,3 ms; (60 Hz), sine VR = 0 V 340 A t = 10 ms; (50 Hz), sine TVJ = 45°C 685 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 665 A²s TVJ = 150 °C 495 A²s 480 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 700 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 7 pF 20130125a DNA90YC2200NA Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 150 Unit A -40 150 °C -40 150 °C Weight 30 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL abcde YYWW Z 1.1 1.5 Nm Nm 3.2 mm terminal to backside 8.6 6.8 mm 3000 V 2500 V 50/60 Hz, RMS; IISOL ≤ 1 mA Part number Product Marking Logo 1.5 10.5 t = 1 second t = 1 minute 1.1 terminal to terminal creepage distance on surface | striking distance through air isolation voltage g D N A 90 YC 2200 NA Part No. XXXXXX = = = = = = = Diode High Voltage Standard Rectifier (>= 2000V) Current Rating [A] Half 3~ Bridge, Common Cathode Reverse Voltage [V] SOT-227B (minibloc) Assembly Code DateCode Assembly Line Ordering Standard Part Number DNA90YC2200NA Similar Part DNA90YA2200NA Equivalent Circuits for Simulation I V0 R0 Marking on Product DNA90YC2200NA Package SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 513723 Voltage class 2200 T VJ = 150°C Rectifier V 0 max threshold voltage 0.86 V R 0 max slope resistance * 9.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a DNA90YC2200NA Outlines SOT-227B (minibloc) 1 2 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a DNA90YC2200NA Rectifier 120 100 103 300 TVJ = 150°C TVJ = 125°C TVJ = 25°C VR = 0 V TVJ = 45°C 80 250 TVJ = 45°C IFSM IF 2 It 60 [A] [A] 40 2 [A s] TVJ = 150°C 200 TVJ = 150°C 20 50 Hz, 80% VRRM 0 0.5 1.0 1.5 2.0 102 150 0.001 2.5 VF [V] 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time per diode 80 RthKA = 50 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W dc = 1 0.5 0.4 0.33 0.17 0.08 40 Ptot 30 [W] 70 dc = 1 0.5 0.4 0.33 0.17 0.08 60 50 IF(AV)M 40 [A] 30 20 20 10 10 0 0 0 10 20 30 40 0 25 50 IF(AV)M [A] 75 100 125 150 175 0 25 50 75 100 125 150 175 TC [°C] Tamb [°C] Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus case temperature 1.6 1.2 Constants for ZthJC calculation: ZthJC i Rthi (K/W) ti (s) 0.8 1 0.06 0.0004 [K/W] 2 0.2 0.00265 3 0.34 0.0045 4 0.4 0.0242 5 0.2 0.15 0.4 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a