DPG20C400PC

DPG20C400PC
HiPerFRED²
VRRM
=
400 V
I FAV
= 2x
10 A
t rr
=
45 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG20C400PC
Backside: cathode
1
4
3
Features / Advantages:
Applications:
Package: TO-263 (D2Pak)
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
DPG20C400PC
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
400
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
400
V
IR
reverse current, drain current
VF
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
typ.
VR = 400 V
TVJ = 25°C
1
µA
VR = 400 V
TVJ = 150°C
0.15
mA
TVJ = 25°C
1.32
V
1.51
V
1.03
V
IF =
forward voltage drop
min.
10 A
IF =
20 A
IF =
10 A
IF =
20 A
TVJ = 150 °C
TC = 150°C
rectangular
1.24
V
T VJ = 175 °C
10
A
TVJ = 175 °C
0.77
V
d = 0.5
for power loss calculation only
19.8
mΩ
2.3
K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR = 200 V f = 1 MHz
TVJ = 25°C
12
pF
I RM
max. reverse recovery current
TVJ = 25 °C
4
A
t rr
reverse recovery time
IF =
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
K/W
0.25
TC = 25°C
10 A; VR = 270 V
-di F /dt = 200 A/µs
65
150
W
A
TVJ = 125°C
6
A
TVJ = 25 °C
45
ns
TVJ = 125°C
65
ns
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
DPG20C400PC
Package
Ratings
TO-263 (D2Pak)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
35
Unit
A
-55
175
°C
-55
150
°C
150
°C
Weight
FC
2
20
mounting force with clip
Product Marking
D
P
G
20
C
400
PC
IXYS Zyyww
Logo
60
N
Part number
XXXXXXXXX
Part No.
g
Assembly Line
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-263AB (D2Pak) (2)
000000
Date Code
Assembly Code
Ordering
Standard
Part Number
DPG20C400PC
Similar Part
DPG20C400PB
DPG20C400PN
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DPG20C400PC
Package
TO-220AB (3)
TO-220ABFP (3)
* on die level
Delivery Mode
Tape & Reel
Code No.
507327
Voltage class
400
400
T VJ = 175 °C
Fast
Diode
V 0 max
threshold voltage
0.77
V
R 0 max
slope resistance *
16.6
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Quantity
800
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
DPG20C400PC
Outlines TO-263 (D2Pak)
Dim.
L1
c2
Supplier
Option
A1
H
D
E
A
D1
W
4
L
L2
1 2 3
c
2x e
3x b2
10.92
(0.430)
mm (Inches)
2x b
E1
9.02
(0.355)
W
Inches
min
max
0.160 0.190
typ. 0.004
0.095
0.020 0.039
0.045 0.055
0.016 0.029
0.045 0.055
0.330 0.370
0.315 0.350
0.098
0.380 0.410
0.245 0.335
0,100 BSC
0.169
0.575 0.625
0.070 0.110
0.040 0.066
typ.
0.002
0.0008
All dimensions conform with
and/or within JEDEC standard.
1.78
(0.07)
3.05
(0.120)
3.81
(0.150)
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
Millimeter
min
max
4.06
4.83
typ. 0.10
2.41
0.51
0.99
1.14
1.40
0.40
0.74
1.14
1.40
8.38
9.40
8.00
8.89
2.5
9.65
10.41
6.22
8.50
2,54 BSC
4.28
14.61 15.88
1.78
2.79
1.02
1.68
typ.
0.040
0.02
2.54 (0.100)
Recommended min. foot print
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
4
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
DPG20C400PC
Fast Diode
30
0.4
12
TVJ = 125°C
VR = 270 V
25
TVJ = 125°C
20 A
20 A
10 A
VR = 270 V
10
5A
20
0.3
15
10 A
Qrr
TVJ = 25°C
125°C
IF
[μC]
[A]
10
5A
0.2
IRM 8
[A] 6
4
5
0
0.0
0.1
0.4
0.8
1.2
1.6
2.0
2
0
VF [V]
100
200
300
400
500
0
-diF /dt [A/μs]
Fig. 1 Forward current
IF versus VF
100
TVJ = 125°C
1.2
VR = 270 V
80
1.0
0.8
trr
Kf
0.6
IF = 20 A
0
300
10
250
VFR 8
VFR
200fr
IF = 10 A
VR = 270 V
150
80
120
160
20
100
100
25
tfr
0
200
300
400
500
0
100
200
300
400
50
0
500
-diF /dt [A/μs]
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
Fig. 6 Typ. forward recov. voltage
VFR and tfr versus diF /dt
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
[ns]
4
2
40
t
TVJ = 125°C
5A
Qrr
0.0
500
12
[V] 6
40
0.2
400
350
10 A
0.4
300
14
60
[ns]
IRM
200
-diF/dt [A/μs]
Fig. 3 Typ. reverse recov. current
IRM versus -diF /dt
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
1.4
100
3
TVJ = 125°C
VR = 270 V
20
2
Erec 15
[μJ] 10
IF = 5 A
ZthJC
10 A
20 A
[K/W]
1
5
0
0
0
100
200
300
400
500
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
1
10
100
1000
10000
t [ms]
Fig. 8 Transient thermal resistance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a