DHG 30 I 1200 HA V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1200 V 30 A 200 ns Part number DHG 30 I 1200 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-247 Conditions ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved max. Unit V VR = 1200 V 50 µA VR = 1200 V TVJ = 125 °C 0.5 mA IF = 30 A TVJ = 25 °C 2.26 V IF = 60 A 3.00 V IF = 30 A IF = 60 A rectangular 1.95 TVJ = 125 °C d = 0.5 2.27 V 3.20 V TC = 90°C 30 A TVJ = 150°C 1.25 V 1.95 30 mΩ 0.70 K/W 150 °C TC = 25 °C 180 W TVJ = 45°C 200 A -55 t = 10 ms (50 Hz), sine IF = reverse recovery time typ. 1200 for power loss calculation only R thJC t rr min. TVJ = 25 °C TVJ = 25 °C 30 A; VR = 600 V -di F /dt = 600 A/µs VR = 600 V; f = 1 MHz TVJ = 25 °C 23 A TVJ = 125°C 30 A TVJ = 25 °C 200 ns TVJ = 125°C 350 ns TVJ = 25 °C 11 pF Data according to IEC 60747and per diode unless otherwise specified 20110510a DHG 30 I 1200 HA Ratings Symbol Definition Conditions per terminal I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 70 0.25 -55 Weight 150 6 MD mounting torque FC mounting force with clip A K/W °C g 0.8 1.2 Nm 20 120 N Product Marking Part number Logo Marking on product DateCode Assembly Code D H G 30 I 1200 HA abcdef YYWWZ = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-247AD (2) 000000 Assembly Line Ordering Standard Part Name DHG 30 I 1200 HA Similar Part DSEP30-12A DSEP29-12A DSEP30-12AR DSEP30-12CR IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Marking on Product DHG30I1200HA Package TO-247AD (2) TO-220AC (2) ISOPLUS247 (2) ISOPLUS247 (2) Delivering Mode Tube Base Qty Code Key 30 503098 Voltage Class 1200 1200 1200 1200 Data according to IEC 60747and per diode unless otherwise specified 20110510a DHG 30 I 1200 HA Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified 20110510a DHG 30 I 1200 HA 60 7 50 6 40 5 TVJ = 125°C IF VR = 600 V 60 A Qrr 30 4 [A] 30 A [µC] 20 3 TVJ = 125°C 15 A TVJ = 25°C 10 0 0.0 0.5 1.0 2 1.5 2.0 2.5 1 300 3.0 400 500 VF [V] 700 800 900 1000 1100 diF /dt [A/µs] Fig. 1 Typ. Forward current versus VF Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt 70 700 TVJ = 125°C 60 60 A TVJ = 125°C 600 VR = 600 V 50 IRR 600 VR = 600 V 500 30 A trr 40 400 15 A [A] 30 [ns] 300 20 200 10 100 0 300 400 500 600 700 800 60 A 30 A 15 A 0 300 900 1000 1100 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] diF /dt [A/µs] Fig. 3 Typ. peak reverse current IRM vs. di/dt Fig. 4 Typ. recovery time trr versus di/dt 2.0 1 TVJ = 125°C VR = 600 V 1.6 60 A 30 A Erec 1.2 [mJ] ZthJC [K/W 0.8 15 A Ri 0.158 0.118 0.155 0.269 0.4 0.0 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] Fig. 5 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved 0.1 0.001 0.01 0.1 ti 0.0005 0.004 0.02 0.15 1 10 tP [s] Fig. 6 Transient thermal impedance Data according to IEC 60747and per diode unless otherwise specified 20110510a