DPG30C300PC HiPerFRED² VRRM = 300 V I FAV = 2x 15 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG30C300PC Backside: cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C300PC Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 300 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 300 V TVJ = 25°C 1 µA VR = 300 V TVJ = 150°C 0.08 mA TVJ = 25°C 1.26 V 1.51 V 1.01 V IF = forward voltage drop min. 15 A IF = 30 A IF = 15 A IF = 30 A TVJ = 150 °C TC = 145°C rectangular 1.29 V T VJ = 175 °C 15 A TVJ = 175 °C 0.69 V d = 0.5 for power loss calculation only 18 mΩ 1.7 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25°C 20 pF I RM max. reverse recovery current TVJ = 25 °C 3 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved K/W 0.25 TC = 25°C 15 A; VR = 200 V -di F /dt = 200 A/µs 90 240 W A TVJ = 125°C 6.5 A TVJ = 25 °C 35 ns TVJ = 125°C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C300PC Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C Weight FC 2 20 mounting force with clip Product Marking D P G 30 C 300 PC IXYS Zyyww Logo 60 N Part number XXXXXXXXX Part No. g Assembly Line = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-263AB (D2Pak) (2) 000000 Date Code Assembly Code Ordering Standard Part Number DPG30C300PC Similar Part DPG30C300PB DPG30C300HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG30C300PC Package TO-220AB (3) TO-247AD (3) * on die level Delivery Mode Tape & Reel Code No. 501901 Voltage class 300 300 T VJ = 175 °C Fast Diode V 0 max threshold voltage 0.69 V R 0 max slope resistance * 14.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 800 Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C300PC Outlines TO-263 (D2Pak) Dim. L1 c2 Supplier Option A1 H D E A D1 W 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 9.02 (0.355) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 4 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C300PC Fast Diode 80 0.5 16 TVJ = 125°C 70 IF = 30 A 14 IF = 15 A 0.4 60 IF 30 A VR = 200 V 12 50 IRM 10 0.3 [μC] 40 7.5 A 8 [A] [A] 0.2 30 IF = 7.5 A 15 A Qrr TVJ = 25°C 150°C 6 20 4 0.1 10 TVJ = 125°C 2 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0 VF [ V] Fig. 1 Forward current IF versus VF 100 200 300 400 500 600 0 100 200 300 400 500 600 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF /dt 70 1.4 VR = 200 V 16 400 TVJ = 125°C 14 VR = 200 V 1.2 TVJ = 125°C 60 IF = 15 A VR = 200 V 12 1.0 0.8 trr Kf 0.6 IF = 30 A 50 VFR 10 IRM Qrr 30 200 [V] 6 15 A [ns] 4 7.5 A 20 20 40 60 80 100 120 140 160 0 0 100 200 300 400 500 600 0 -diF /dt [A/μs] TVJ [°C] Fig. 4 Dynamic parameters Qrr, IRM versus TVJ tfr VFR 2 0.0 0 tfr 8 [ns] 40 0.4 0.2 300 100 0 100 200 300 400 500 600 -diF /dt [A/μs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 1.8 16 1.6 12 IF = 30 A 1.4 IF = 15 A Erec ZthJC IF = 7.5 A 8 1.2 [K/W] [μJ] 1.0 4 0.8 TVJ = 125°C VR = 200 V 0.6 0 0 100 200 300 400 500 600 -diF/dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a