DSB10I45PM preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 10 A VF = 0.52 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSB10I45PM Backside: isolated 3 1 Features / Advantages: Applications: Package: TO-220FP ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 2500 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Base plate: Plastic overmolded tab ● Reduced weight IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a DSB10I45PM preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 45 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 45 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 45 V TVJ = 25°C 3.5 mA 45 V TVJ = 100°C 35 mA TVJ = 25°C 0.56 V 0.78 V 0.52 V 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 125 °C TC = 115°C rectangular 0.74 V T VJ = 150 °C 10 A TVJ = 150 °C 0.30 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved typ. VR = IF = forward voltage drop min. 20.8 mΩ 4.5 K/W K/W 0.50 TC = 25°C 5 V f = 1 MHz 30 260 326 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20131030a DSB10I45PM preliminary Package Ratings TO-220FP Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 150 °C -55 125 °C 150 °C Weight 2 MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL terminal to terminal 3.2 terminal to backside 2.5 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute Product Marking Part Number Logo DateCode Assembly Code 50/60 Hz, RMS; IISOL ≤ 1 mA g 0.4 0.6 Nm 20 60 N 2.7 mm 2.5 mm 2500 V 2080 V Part number D S B 10 I 45 PM abcdef = = = = = = = Diode Schottky Diode ultra low VF Current Rating [A] Single Diode Reverse Voltage [V] TO-220ACFP (2) YYWW Z XXXXXX Assembly Line Ordering Standard Part Number DSB10I45PM Equivalent Circuits for Simulation I V0 R0 Marking on Product DSB10I45PM * on die level Delivery Mode Tube Code No. 504423 T VJ = 150 °C Schottky V 0 max threshold voltage 0.3 V R 0 max slope resistance * 17.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a DSB10I45PM preliminary Outlines TO-220FP E A ØP A1 Q H D 1 3 L1 A2 d1 L b1 b e c Note: All metal surface are matte pure tin plated except trimmed area. 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 1.27 1.47 0.45 0.60 15.67 16.07 0 1.10 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 Dim. A A1 A2 b b1 c D d1 E e H L L1 ØP Q Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.050 0.058 0.018 0.024 0.617 0.633 0 0.043 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a