MIXA60W1200TED

MIXA60W1200TED
Six-Pack
XPT IGBT
VCES =1200 V
IC25 = 85 A
VCE(sat)= 1.8 V
Preliminary data
Part name (Marking on product)
MIXA60W1200TED
15, 16
25, 26
17
1
5
9
2
6
10
NTC
23, 24
21, 22
19, 20
E 72873
18
3
4
7
11
8
12
Pin configuration see outlines.
13, 14
27, 28
Features:
Application:
Package:
•Easy paralleling due to the positive temperature coefficient of the on-state voltage
•Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
-square RBSOA @ 3x IC
- low EMI
•Thin wafer technology combined with the XPT design results in a competitive low VCE(sat)
•SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
•AC motor drives
•Solar inverter
•Medical equipment
•Uninterruptible power supply
•Air-conditioning systems
•Welding equipment
•Switched-mode and
resonant-mode power supplies
•"E2-Pack" standard outline
•Insulated copper base plate
•Soldering pins for PCB mounting
•Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100622c
1-6
MIXA60W1200TED
Ouput Inverter T1 - T6
Ratings
Symbol
Definitions
Conditions
VCES
collector emitter voltage
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient IC25
IC80
collector current
Ptot
total power dissipation
VCE(sat)
min.
typ.
max.
Unit
1200
V
±20
±30
V
V
TC = 25°C
TC = 80°C
85
60
A
A
TC = 25°C
290
W
collector emitter saturation voltage
IC = 55 A; VGE = 15 V
TVJ= 25°C
TVJ=125°C
1.8
2.1
2.1
V
V
VGE(th)
gate emitter threshold voltage
IC = 2 mA; VGE = VCE
TVJ= 25°C
6.0
6.5
V
ICES
collector emitter leakage current
VCE = VCES; VGE = 0 V
TVJ= 25°C
TVJ=125°C
0.5
mA
mA
IGES
gate emitter leakage current
VGE = ±20 V
500
nA
QG(on)
total gate charge
VCE = 600 V; VGE = 15 V; IC = 50 A
165
nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
VCE = 600 V; IC = 50 A
VGE = ±15 V; RG = 15 W
70
40
250
100
4.5
5.5
ns
ns
ns
ns
mJ
mJ
RBSOA
reverse bias safe operating area
VGE = ±15 V; RG = 15 W;
SCSOA
tSC
ISC
short circuit safe operating area
short circuit duration
short circuit current
VCE = 900 V; VGE = ±15 V;
RG = 15 W; non-repetitive
RthJC
thermal resistance junction to case
(per IGBT)
TVJ= 25°C
5.4
0.2
TVJ=125°C
TVJ=125°C
VCEK = 1200 V
TVJ = 125°C
150
A
10
µs
A
0.43
K/W
200
Output Inverter D1 - D6
Ratings
Symbol
Definitions
Conditions
VRRM
max. repetitve reverse voltage
IF25
IF80
forward current
VF
forward voltage
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 600 V
diF /dt = -1200 A/µs
IF = 60 A; VGE = 0 V
RthJC
thermal resistance junction to case
(per diode)
min.
typ.
max.
Unit
TVJ= 25°C
1200
V
TC = 25°C
TC = 80°C
88
59
A
A
IF = 60 A; VGE = 0 V
TVJ= 25°C
TVJ=125°C
1.95
1.95
2.2
V
V
TVJ=125°C
8
60
350
2.5
µC
A
ns
mJ
0.6
K/W
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100622c
2-6
MIXA60W1200TED
Temperature Sensor NTC
Symbol
R25
B25/50
Definitions
resistance
Conditions
Definitions
Conditions
TC = 25°C
min.
4.75
Ratings
typ. max.
5.0
5.25
3375
Unit
kW
K
min.
-40
Ratings
typ. max.
125
150
125
Unit
°C
°C
°C
3000
V~
Module
Symbol
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
VISOL
isolation voltage
-40
IISOL < 1 mA; 50/60 Hz
CTI
comparative tracking index
Md
mounting torque (M5)
3
dS
dA
creep distance on surface
strike distance through air
6
6
Rpin-chip
resistance pin to chip
RthCH
thermal resistance case to heatsink
-
with heatsink compound
Weight
6
Nm
mm
mm
5
mW
0.02
K/W
180
g
Equivalent Circuits for Simulation
I
V0
Symbol
V0
R0
V0
R0
R0
Definitions
IGBT
Conditions
T1 - T6
min.
TVJ=150°C
free wheeling diode
D1 - D6
TVJ=150°C
Ratings
typ. max.
1.1
25.1
1.22
12.99
Unit
V
mW
V
mW
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100622c
3-6
MIXA60W1200TED
Circuit Diagram
15, 16
25, 26
17
1
5
9
2
6
10
3
7
11
4
8
12
23, 24
21, 22
19, 20
NTC
18
13, 14
27, 28
Outline Drawing
Detail Y
Detail X
Ø 2.1; l=6
15°
±0.05
1.2
baseplate typ. 100 µm convex
over 75 mm before mounting
±0.05
Ø 2.1
75.7
1.5
Ø 2.5
±0.1
+0.3
Ø6
Detail Z
82.3
±1°
0.8
7 -0.5
±0.02
Z
0.8
Y
17±0.5
20.5 ±0.1
3.5-0.5
Dimensions in mm (1 mm = 0.0394“)
B
20 19
22 21
6
86.1
76.98
16
15
27
28
14
13
93
107.5
1112
7.62
0
7.62
A 11.43
20.95
76.98
73.17
61.74
9 10
65.55
7 8
54.12
5 6
50.31
38.88
3 4
42.69
19.83
27.45
16.02
1 2
31.26
11
11.43
18 17
25
26
Ø5.5
±0.2
45
20.95
X
24 23
38.4
32 ±0.2
73.17
57.93
61.74
38.88
42.69
23.64
0
19.83
72.7
j n0.4 A B
±0.2
±0.3
Product Marking
Part number
M = Module
I = IGBT
X = XPT
A = standard
60 = Current Rating [A]
W = Six-Pack
1200 = Reverse Voltage [V]
T = NTC
ED = E2-Pack
Ordering
Part Name
Marking on Product
Standard
MIXA60W1200 TED
MIXA60W1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Delivering Mode Base Qty Ordering Code
Box
6
507660
20100622c
4-6
MIXA60W1200TED
Inverter T1 - T6
100
100
VGE = 15 V
80
80
60
TVJ = 25°C
IC
IC
TVJ = 125°C
[A] 40
60
0
1
2
0
3
VCE [V]
9V
0
1
4
15
VGE
10
[V]
40
5
TVJ = 125°C
20
TVJ = 25°C
5
6
7
8
9
10
11
12
0
13
0
40
80
10
Eoff
[mJ]
4
5.0
2
60
80
100
120
IC [A]
Fig. 5 Typ. switching energy vs. collector current
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
4.0
IC =
50 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
Eon
4.5
40
240
Eoff
5.5
E
20
200
6.0
6
0
160
Fig. 4 Typ. turn-on gate charge
Eon
RG = 15 Ω
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
8
120
QG [nC]
VGE [V]
Fig. 3 Typ. tranfer characteristics
0
3
IC = 50 A
VCE = 600 V
IC 60
[mJ]
VCE [V]
20
80
E
2
Fig. 2 Typ. output characteristics
100
0
TVJ = 125°C
20
Fig. 1 Typ. output characteristics
[A]
11 V
[A] 40
20
0
13 V
VGE = 15 V
17 V
19 V
12
16
20
24
28
32
RG [ΩW]
Fig. 6 Typ. switching energy vs. gate resistance
20100622c
5-6
MIXA60W1200TED
Inverter D1 - D6
120
4.0
TVJ = 125°C
VR = 600 V
100
120 A
3.2
80
IC
60 A
2.4
Erec
60
[mJ]
[A]
40
30 A
1.6
TVJ = 125°C
TVJ = 25°C
20
0
0.0
0.5
1.0
0.8
1.5
2.0
2.5
0.0
600
3.0
700
800
900
1000
1100
1200
1300
diF /dt [A/µs]
VF [V]
Fig. 7 Typ. Forward current versus VF
Fig. 8 Typ. recovery energy Erec versu versus di/dt
IGBT
1
2
3
4
NTC
100000
FRD
Ri
ti
0.1
0.05
0.21
0.07
0.0025
0.03
0.03
0.08
ti
Ri
0.137
0.1
0.233
0.13
0.0025
0.03
0.03
0.08
1
Diode
IGBT
10000
R
ZthJC 0.1
[Ω]
[K/W]
1000
100
25
50
75
100
125
150
TC [°C]
Fig. 9 Typ. NTC resistance versus temperature
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
0.01
0.001
0.01
0.1
1
10
tp [s]
Fig. 10 Typ. transient thermal impedance
20100622c
6-6