CLA30E1200NPZ High Efficiency Thyristor VRRM = 1200 V I TAV = 30 A VT = 1,27 V Two Quadrants Operation QI & QII Single Thyristor with two gate polarities Part number CLA30E1200NPZ Backside: anode Three Quadrants Operation T2 Positive Half Cycle + (-) IGT (+) IGT T1 REF IGT - T2 T2 4 T1 QII QI QIII QIV REF 1 ± IGT + IGT 3 (-) IGT T1 REF Negative Half Cycle Note: All Polarities are referenced to T1 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Two gate current polarities usable - positive -> quadrant I - negative -> quadrant II ● Thyristor can be used as Triac - anti-parallel combination with AGT - Anode-Gated-Thyristor covers quadrant III - AGT-counterpart: CLB30I1200PZ ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. 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For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA30E1200NPZ Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 10 µA 2 mA TVJ = 25°C 1,30 V 1,59 V 1,27 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 115 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1,65 V T VJ = 150 °C 30 A 47 A TVJ = 150 °C 0,86 V 13,2 mΩ 0,5 K/W K/W 0,25 TC = 25°C 250 W t = 10 ms; (50 Hz), sine TVJ = 45°C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45°C 450 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 440 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 325 A²s 315 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 13 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0,3 A/µs; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0,3 A; V = ⅔ VDRM non-repet., I T = pF 10 W 5 W 0,5 W 150 A/µs 500 A/µs TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1,3 TVJ = -40 °C 1,6 V VD = 6 V TVJ = 25 °C ± 30 mA TVJ = -40 °C ± 50 mA TVJ = 150°C 0,2 V ±1 mA TVJ = 25 °C 90 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0,3 A; di G /dt = V 0,3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 60 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0,3 A; di G /dt = 0,3 A/µs VR = 100 V; I T = 30 A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA30E1200NPZ Package Ratings TO-263 (D2Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 35 Unit A -40 150 °C -40 125 °C 150 °C 1,5 Weight FC 20 mounting force with clip d Spp/App typ. Product Marking C L A 30 E 1200 N PZ IXYS Zyyww Logo Assembly Line Date Code N 4,2 mm terminal to backside 4,7 mm Part description XXXXXXXXX Part No. 60 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g 000000 = = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] Three Quadrants operation: QI - QIII TO-263AB (D2Pak) (2HV) Assembly Code Ordering Standard Ordering Number CLA30E1200NPZ Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tape & Reel Quantity 800 Code No. 516330 T VJ = 150 °C Thyristor V 0 max threshold voltage 0,86 R0 max slope resistance * 10 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Marking on Product CLA30E1200NPZ V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA30E1200NPZ Outlines TO-263 (D2Pak-HV) Dim. W A Supplier Option D1 L1 c2 A1 H D E 1 4 3 L D2 A2 e1 A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 c 2x e 2x b2 10.92 (0.430) W E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.091 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) mm (Inches) 2x b Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.3 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 4 1 ± IGT 3 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA30E1200NPZ Thyristor 60 280 50 1000 50 Hz, 80% VRRM VR = 0 V 240 40 IT TVJ = 45°C ITSM 200 2 It TVJ = 45°C 30 [A] [A] 160 20 [A2s] TVJ = 125°C TVJ = 150°C 125°C 10 TVJ = 125°C 100 120 TVJ = 25°C 0 0,5 1,0 1,5 80 0,001 2,0 0,01 VT [V] B IGT: TVJ = 25°C 2 [V] 1 3 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 s) 40 C IGT: TVJ = -40°C IGT: TVJ = 0°C B 2 2 102 B VG 1 Fig. 2 Surge overload current ITSM: crest value, t: duration IGD: TVJ = 125°C 3 1 t [s] Fig. 1 Forward characteristics 4 0,1 30 TVJ = 125°C 101 tgd IT(AV)M [µs] [A] dc = 1 0.5 0.4 0.33 0.17 0.08 20 lim. 100 10 IGD: TVJ = 25°C typ. A 10-1 10-2 0 0 25 50 75 10-1 100 0 101 0 40 IG [A] IG [mA] Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd Triggering: A = no; B = possible; C = safe 60 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature 0,6 dc = 1 0.5 0.4 0.33 0.17 0.08 50 40 P(AV) RthHA 0.6 0.8 1.0 2.0 4.0 8.0 0,5 0,4 ZthJC 30 0,3 [W] i Rthi (K/W) 1 0.08 2 0.06 3 0.2 4 0.05 5 0.11 [K/W] 20 0,2 10 0,1 0 ti (s) 0.01 0.001 0.02 0.2 0.11 0,0 0 10 20 30 40 0 IT(AV) [A] 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b