MCMA110P1600VA

MCMA110P1600VA
Thyristor Module
VRRM
= 2x 1600 V
I TAV
=
110 A
VT
=
1.21 V
Phase leg
Part number
MCMA110P1600VA
Backside: isolated
6/7
1
2
5/10
4
3
8/9
Features / Advantages:
Applications:
Package: V1-A-Pack
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140313a
MCMA110P1600VA
Ratings
Thyristor
Conditions
Symbol
V RSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
max.
1700
Unit
V
V RRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
1600
V
I R/D
reverse current, drain current
VT
forward voltage drop
min.
typ.
VR/D = 1600 V
TVJ = 25°C
100
µA
VR/D = 1600 V
TVJ = 140°C
10
mA
I T = 110 A
TVJ = 25°C
1.24
V
1.52
V
1.21
V
I T = 220 A
TVJ = 125 °C
I T = 110 A
I T = 220 A
I TAV
average forward current
TC = 85°C
180° sine
I T(RMS)
RMS forward current
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
for power loss calculation only
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I TSM
max. forward surge current
I²t
value for fusing
1.57
V
T VJ = 140 °C
110
A
170
A
TVJ = 140 °C
0.85
V
380
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
1.90
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
2.05
kA
t = 10 ms; (50 Hz), sine
TVJ = 140 °C
1.62
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
1.75
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
18.1 kA²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
17.5 kA²s
TVJ = 140 °C
13.0 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 140 °C
12.7 kA²s
95
t P = 300 µs
average gate power dissipation
critical rate of rise of current
K/W
0.20
junction capacitance
(di/dt) cr
mΩ
K/W
TC = 25°C
CJ
PGAV
3.3
0.3
TVJ = 140°C; f = 50 Hz
repetitive, IT = 330 A
pF
10
W
5
W
0.5
W
150 A/µs
t P = 200 µs; di G /dt = 0.45 A/µs;
I G = 0.45 A; VD = ⅔ VDRM
non-repet., IT = 110 A
500 A/µs
(dv/dt) cr
critical rate of rise of voltage
TVJ = 140°C
VGT
gate trigger voltage
VD = 6 V
TVJ = 25 °C
TVJ = -40 °C
1.6
V
I GT
gate trigger current
VD = 6 V
TVJ = 25 °C
150
mA
TVJ = -40 °C
200
mA
TVJ = 140 °C
0.2
V
10
mA
TVJ = 25 °C
200
mA
VD = ⅔ VDRM
1000 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGD
gate non-trigger voltage
I GD
gate non-trigger current
IL
latching current
VD = ⅔ VDRM
t p = 10 µs
1.5
V
IG = 0.45 A; di G /dt = 0.45 A/µs
IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
200
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG = 0.45 A; di G /dt = 0.45 A/µs
VR = 100 V; I T = 110 A; VD = ⅔ VDRM TVJ = 140 °C
di/dt = 10 A/µs; dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
185
µs
20 V/µs; t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20140313a
MCMA110P1600VA
Package
Ratings
V1-A-Pack
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
100
Unit
A
-40
140
°C
-40
125
°C
125
°C
Weight
MD
37
2
mounting torque
d Spp/App
d Spb/Apb
VISOL
Date Code
Prod. Index
Lot No.:
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)
leer (33), lfd.# (33-36)
Part Number
MCMA110P1600VA
Equivalent Circuits for Simulation
V0
terminal to backside
12.0
mm
R0
50/60 Hz, RMS; IISOL ≤ 1 mA
M
C
M
A
110
P
1600
VA
Part Number (Typ)
I
mm
Marking on Product
MCMA110P1600VA
* on die level
=
=
=
=
=
=
=
=
V
3000
V
Module
Thyristor (SCR)
Thyristor
(up to 1800V)
Current Rating [A]
Phase leg
Reverse Voltage [V]
V1-A-Pack
Delivery Mode
Box
Quantity
10
Code No.
513348
T VJ = 140 °C
Thyristor
V 0 max
threshold voltage
0.85
V
R 0 max
slope resistance *
2.1
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
3600
Part number
yywwA
Ordering
Standard
Nm
6.0
t = 1 second
t = 1 minute
2.5
terminal to terminal
creepage distance on surface | striking distance through air
isolation voltage
g
Data according to IEC 60747and per semiconductor unless otherwise specified
20140313a
MCMA110P1600VA
Outlines V1-A-Pack
15,8
±1
0,5
+0,2
0,25
50
3,3
±0,5
2
±0,25
17
13
R2
35
26
63
31,6
±0,2
38,6
14
±0,3
7 ±0,3
4x45°
14
±0,3
7 ±0,3
5
4
3
2
0,5
±0,15
51,5
±0,3
6/7
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
23,5
15
5,5
10
9
8
7
6
25,75
±0,1
R
R
5,5
11 ±0,3
11 ±0,3
1
R1
1
2
5/10
4
3
8/9
Data according to IEC 60747and per semiconductor unless otherwise specified
20140313a
MCMA110P1600VA
Thyristor
105
300
VR = 0 V
50 Hz, 80% VRRM
1600
250
200
IT
ITSM
[A]
TVJ = 125°C
100
TVJ = 45°C
2
It
104
1200
150
TVJ = 45°C
[A]
2
[A s]
TVJ = 140°C
140°C
TVJ = 140°C
800
50
TVJ = 25°C
103
0
0.5
1.0
1.5
2.0
0.01
0.1
VT [V]
1
2
t [s]
4 5 6 7 8 910
t [ms]
Fig. 3 I t versus time (1-10 s)
100.0
1: IGD, TVJ = 140°C
3
2
Fig. 2 Surge overload current
ITSM: crest value, t: duration
Fig. 1 Forward characteristics
10
1
200
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
5
2
VG
1
3
dc =
1
0.5
0.4
0.33
0.17
0.08
160
6
4
TVJ = 25°C
10.0
ITAVM120
tgd
1
[V]
lim.
[μs]
1.0
[A] 80
typ.
40
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
0.1
1
10
100
1000
0.1
0.01
10000
0
0.10
1.00
10.00
0
40
IG [A]
IG [mA]
Fig. 5 Gate controlled delay time tgd
Fig. 4 Gate voltage & gate current
80
120
160
Tcase [°C]
Fig. 6 Max. forward current at
case temperature
0.32
180
dc =
1
0.5
0.4
0.33
0.17
0.08
150
Ptot
120
[W]
90
RthHA
0.2
0.4
0.6
0.8
1.0
2.0
0.24
ZthJC0.16
i Rthi (K/W)
1
0.0073
2
0.0128
3
0.1779
4
0.1020
[K/W]
60
0.08
30
ti (s)
0.0001
0.0031
0.1000
0.4400
0.00
0
0
40
80
120 0
IT(AV) [A]
40
80
120
160
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
1
10
100
1000
10000
t [ms]
Tamb [°C]
Fig. 8 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20140313a