Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = 3000V IC90 = 28A VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ VCGR TJ = 25°C to 150°C, RGE = 1M VGES Continuous ± 20 V VGEM Transient ± 30 V = 25°C to 150°C 3000 V 3000 V IC25 TC = 25°C 50 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1ms 220 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 15 Clamped Inductive Load ICM = 220 VCE 1500 A V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive 10 μs PC TC 216 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 20..120 / 4.5..27 N/lb. 4000 V~ 5 g = 25°C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 5 Seconds Weight 1 5 1 = Gate 2 = Emitter Characteristic Values Min. Typ. Max. BV CES IC = 250μA, VGE = 0V 3000 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 28A, VGE = 15V, Note 1 TJ = 125°C © 2014 IXYS CORPORATION, All Rights Reserved 2.3 2.8 5 = Collector Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages Low Gate Drive Requirement High Power Density Applications V Note 2, TJ = 125°C Isolated Tab Features Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) 2 5.0 V 35 1.5 μA mA ±200 nA 2.7 V Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches V DS100601(03/14) IXBF28N300 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS 14 IC = 28A, VCE = 10V, Note 1 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz C res Qg Qge IC = 28A, VGE = 15V, VCE = 1500V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 28A, VGE = 15V VCE = 960V, RG = 10 Resistive Switching Times, TJ = 125°C IC = 28A, VGE = 15V VCE = 960V, RG = 10 ISOPLUS i4-PakTM (HV) Outline 24 2370 pF 87 pF 30 pF 110 nC 14 nC 50 nC 50 ns 412 ns 125 ns 3660 ns 74 ns 805 ns 245 ns 3280 ns RthJC A E S Q A2 D 2 3 S T R 1 U 4 L1 L c e e1 b1 A1 b Pin 1 = Gate Pin2 = Emitter Pin 3 = Collector Tab 4 = Isolated 0.58 °C/W RthCS 0.15 °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 28A, VGE = 0V, Note 1 trr IF = 14A, VGE = 0V, -diF/dt = 100A/μs IRM QRM Notes: 2.7 VR = 100V, VGE = 0V V 1.5 μs 31.0 A 22.5 μC 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBF28N300 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 60 300 VGE = 25V 19V 15V 13V 11V 50 15V 9V 40 200 I C - Amperes I C - Amperes VGE = 25V 19V 17V 250 30 7V 20 13V 150 11V 100 9V 10 50 5V 0 7V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 60 1.8 VGE = 25V 19V 15V 13V 11V 30 VGE = 15V 1.6 VCE(sat) - Normalized 9V 40 I C - Amperes 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 50 20 VCE - Volts VCE - Volts 30 7V 20 10 I C = 56A 1.4 1.2 I C = 28A 1.0 0.8 I C = 14A 5V 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 7 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Input Admittance 80 TJ = 25ºC TJ = - 40ºC 25ºC 125ºC 70 6 60 4 I C - Amperes VCE - Volts 5 I C = 56A 3 50 40 30 28A 20 2 14A 10 0 1 6 7 8 9 10 11 12 13 VGE - Volts © 2014 IXYS CORPORATION, All Rights Reserved 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXBF28N300 Fig. 7. Transconductance Fig. 8. Gate Charge 16 40 TJ = - 40ºC 36 VCE = 1500V 14 I C = 28A 32 VGE - Volts g f s - Siemens 24 I G = 10mA 12 25ºC 28 125ºC 20 16 10 8 6 12 4 8 2 4 0 0 10 20 30 40 50 60 70 80 90 0 100 0 20 40 I C - Amperes 80 100 120 Fig. 10. Capacitance Fig. 9. Forward Voltage Drop of Intrinsic Diode 70 10,000 f = 1 MHz TJ = 25ºC 125ºC Capacitance - PicoFarads J 60 50 I F - Amperes 60 QG - NanoCoulombs 40 VGE = 0V 30 20 VGE = 15V Cies 1,000 Coes 100 10 Cres 0 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 Fig. 11. Reverse-Bias Safe Operating Area 20 25 30 35 40 Fig. 12. Maximum Transient Thermal Impedance 240 1 200 D = 0.5 Z (th)JC - ºC / W 160 I C - Amperes 15 VCE - Volts VF - Volts 120 80 D = 0.2 0.1 D = 0.1 D = 0.05 D = tp / T D = 0.02 0.01 tp D = 0.01 TJ = 125ºC 40 T RG = 10Ω dv / dt < 10V / ns Single Pulse 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.001 0.000001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 10 IXBF28N300 Fig. 13. Forward-Bias Safe Operating Area @ T C = 25ºC Fig. 14. Forward-Bias Safe Operating Area @ T C = 75ºC 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 25µs 10 100µs 1 1ms I C - Amperes I C - Amperes 100 10 25µs 100µs 1 1ms 10ms 0.1 0.1 TJ = 150ºC TC = 25ºC TJ = 150ºC 100ms Single Pulse Single Pulse DC 0.01 10ms TC = 75ºC DC 0.01 1 10 100 VCE - Volts 1,000 © 2014 IXYS CORPORATION, All Rights Reserved 10,000 1 10 100 1,000 100ms 10,000 VCE - Volts IXYS REF: B_28N300(6P) 03-11-14