IXEL40N400 Very High Voltage IGBT VCES IC110 VCE(sat) tfi(typ) ( Electrically Isolated Tab) = = ≤ = 4000V 40A 3.2V 425ns ISOPLUS i5-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 4000 V Continuous ±20 V VGEM Transient ±30 V IC25 IC110 TC = 25°C TC = 110°C 90 40 A A ICM Pulse Width Limited by TJM, 1ms, VGE = 25V 400 A PC TC = 25°C 380 W TJ - 40 ... +150 °C TJM 150 °C Tstg - 40 ... +150 °C 300 260 °C °C 4000 V~ 30..170 / 7..36 Nm/lb-in. 8 g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s VISOL IISOL < 1mA, 50/60 Hz, t = 1 minute FC Mounting Force Weight G E C G = Gate E = Emitter Isolated Tab C = Collector Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation UL Recognized Package High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC 5.5 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 10mA, VCE = VGE Note 2, TJ = 125°C = IC110, VGE = 15V, Note 1 TJ = 125°C © 2012 IXYS CORPORATION, All Rights Reserved 7.0 V 100 μA mA ±500 nA 3.2 V V 1.5 2.4 3.0 High Power Density Easy to Mount Applications Capacitor Discharge Pulser Circuits DS99385B(09/12) IXEL40N400 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = IC110, VCE = 10V, Note 1 14 ISC IC = IC110, VCC = 3400V, VCM < 4000V ISOPLUS i5-PakTM HV Outline E 24 S 200 A VGE = 15V, tSC < 10μs 4 Cies 6040 278 pF 120 pF RGint 5.2 Ω Qg(on) 275 nC 63 nC Qgc 134 nC td(on) tri Eon td(off) tfi 160 100 55 630 425 ns ns mJ ns ns 165 mJ 155 105 85 715 455 205 ns ns mJ ns ns mJ Qge Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Notes: VCE = 25V, VGE = 0V, f = 1MHz IC = IC110, VGE = 15V, VCE = 1000 V Inductive load, TJ = 25°C IC = IC110, VGE = 15V VCE = 2800V, RG = 33Ω Note 3 Inductive load, TJ = 125°C IC = IC110, VGE = 15V VCE = 2800V, RG = 33Ω Note 3 (Pressure Mount) 0.15 1 2 pF Cres Coes S 0.26 °C/W °C/W + 3 c e1 e1 b3 b2 Pin 1 Pin 2 Pin 3 Tab 4 SYM INCHES MIN MAX b1 e = Gate = Emitter = Collector = Isolated MILLIMETER MIN MAX A 0.190 0.205 4.83 5.21 A1 0.102 0.118 2.59 3.00 A2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 D 1.020 1.040 25.91 26.42 E 0.770 0.799 19.56 20.29 e 0.150 BSC e1 L 0.450 BSC 0.780 0.820 3.81 BSC L1 0.080 0.102 2.03 2.59 Q 0.210 0.235 5.33 5.97 11.43 BSC 19.81 20.83 Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 T 0.801 0.821 20.34 20.85 U 0.065 0.080 1.65 2.03 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp ICES measurement. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXEL40N400 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 80 300 VGE = 25V 21V 19V 17V 15V 70 250 13V 17V 200 50 IC - Amperes IC - Amperes 60 VGE = 25V 21V 19V 11V 40 30 15V 150 13V 100 20 9V 10 11V 50 9V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 0 5 10 15 VCE - Volts 80 2.0 VGE = 25V 21V 19V 17V 15V 30 VGE = 15V 1.8 13V 50 VCE(sat) - Normalized IC - Amperes 60 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 70 20 VCE - Volts 11V 40 30 9V 20 I 1.6 = 80A C 1.4 1.2 I = 40A C 1.0 0.8 I 0.6 10 C = 20A 7V 0.4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 5 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.5 100 125 150 Fig. 6. Input Admittance 180 TJ = 25ºC 5.0 160 4.5 140 IC - Amperes VCE - Volts 75 200 6.0 4.0 3.5 50 TJ - Degrees Centigrade I C = 80A 3.0 2.5 120 100 80 TJ = - 40ºC 25ºC 125ºC 60 40A 2.0 40 1.5 20 20A 1.0 0 9 11 13 15 17 19 VGE - Volts © 2012 IXYS CORPORATION, All Rights Reserved 21 23 25 5 6 7 8 9 10 11 VGE - Volts 12 13 14 15 16 IXEL40N400 Fig. 8. Gate Charge Fig. 7. Transconductance 16 45 TJ = - 40ºC 40 35 I C = 40A I G = 10mA 12 25ºC 30 g f s - Siemens VCE = 1000V 14 VGE - Volts 125ºC 25 20 10 8 6 15 4 10 2 5 0 0 0 50 100 150 0 200 40 80 160 200 240 280 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 100,000 180 f = 1 MHz 160 10,000 140 Cies IC - Amperes Capacitance - PicoFarads 120 QG - NanoCoulombs IC - Amperes 1,000 Coes 120 100 80 60 100 Cres 10 0 5 10 15 20 25 30 35 40 40 TJ = 125ºC 20 RG = 33Ω dv / dt < 10V / ns 0 500 1000 1500 2000 2500 3000 3500 4000 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 IXEL40N400 Fig. 12. Typ. Swicthing Characteristics vs. Collector Current Fig. 13. Typ. Swicthing Characteristics vs. Gate Resistor 0.30 0.40 0.36 VCC = 2800V, RG = 33Ω 0.32 VGE = 15V, TJ = 125ºC 0.25 E on, Eoff - Joule 0.28 E on, Eoff - Joule Eoff Eoff 0.24 0.20 0.16 Eon 0.12 0.08 0.20 0.15 0.10 Eon VCC = 2800V, IC = 40A 0.05 VGE = 15V, TJ = 125ºC 0.04 0.00 0.00 0 10 20 30 40 50 60 IC - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 70 80 90 0 50 100 150 200 250 RG - Ohms IXYS REF: EL_40N400 9-27-12