HiPerFASTTM IGBT VCES IC25 VCE(sat) tfi typ IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 70 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms 150 A SSOA (RBSOA) PC VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C ICM = 60 A 190 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-220 (IXGP) G G = Gate, E = Emitter, 1.13/10Nm/lb.in. Weight 4 z z z z z g z z z z VGE(th) Test Conditions ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 24 A, VGE = 15 V © 2005 IXYS All rights reserved C = Collector, TAB = Collector Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VCE = VGE IC C (TAB) Features z Symbol C E Applications Mounting torque Md = 600 V = 70 A = 2.7 V = 32 ns 2.5 TJ = 25°C TJ = 150°C TJ = 25°C 5.0 V 50 1 µA mA ±100 nA 2.7 V DS99170A(01/05) IXGP 30N60C2 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 24 A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 18 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = 24 A, VGE = 15 V, VCE = 300 V Qgc td(on) 28 S 1430 pF 110 pF 40 pF 70 nC 10 nC 23 nC 13 ns tri Inductive load, TJ = 25°°C 15 ns td(off) IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 Ω 70 tfi Eoff td(on) tri Eon td(off) tfi Inductive load, TJ = 125°°C IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 Ω Eoff 140 Pins: 1 - Gate 3 - Source ns 60 ns 0.19 0.30 mJ 13 ns 17 ns 0.22 mJ 120 ns 130 ns 0.59 mJ RthJC TO-220 Outline 0.65 K/W RthCH 0.25 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 2 - Drain 4 - Drain IXGP 30N60C2 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 270 50 VGE = 15V 13V 11V 45 40 9V 13V 210 30 I C - Amperes 35 I C - Amperes VGE = 15V 240 7V 25 20 15 11V 180 150 9V 120 90 7V 60 10 30 5V 5 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 Fig. 3. Output Characteristics @ 125 Deg. C 12 14 16 18 1.2 VGE = 15V 13V 11V 40 V GE = 15V 9V 1.1 V C E (sat)- Normalized 45 I C - Amperes 10 Fig. 4. Dependence of V CE(sat ) on Tem perature 50 35 7V 30 25 20 15 5V 10 I C = 48A 1.0 0.9 I C = 24A 0.8 0.7 0.6 5 I C = 12A 0.5 0 0.5 1 1.5 2 2.5 3 25 3.5 50 75 100 125 150 TJ - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 200 4.5 TJ = 25ºC I C = 48A 24A 12A 180 160 I C - Amperes 4 VC E - Volts 8 V C E - Volts V C E - Volts 3.5 3 140 120 100 80 60 2.5 TJ = 25ºC 125ºC 40 20 2 0 5 6 7 8 9 10 11 12 13 14 15 16 17 V G E - Volts © 2005 IXYS All rights reserved 3 4 5 6 7 8 V G E - Volts 9 10 11 12 IXGP 30N60C2 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 35 2000 TJ = 125ºC VGE = 15V VCE = 400V 1800 30 1600 E off - microJoules g f s - Siemens 25 TJ = 25ºC 125ºC 20 15 10 I C = 48A 1400 1200 1000 I C = 24A 800 600 400 5 200 0 I C = 12A 0 0 20 40 60 80 100 120 140 160 180 200 5 10 15 20 I C - Amperes 1000 E off - microJoules E off - microJoules R G = 5Ω VGE = 15V VCE = 400V 1200 800 TJ = 125ºC 600 400 TJ = 25ºC 200 35 40 45 50 1400 R G = 5Ω VGE = 15V VCE = 400V 1200 30 Fig. 10. Dependence of Turn-Off Energy on Tem perature Fig. 9. Dependence of Turn-Off Energy on IC 1400 25 R G - Ohms I C = 48A 1000 800 600 I C = 24A 400 200 I C = 12A 0 0 10 15 20 25 30 35 40 45 50 25 35 I C - Amperes 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG Fig. 12. Dependence of Turn-Off Sw itching Tim e on IC 200 td(off) tfi - - - - - - 400 TJ = 125ºC VGE = 15V VCE = 400V 350 300 250 200 I C = 12A I C = 24A I C = 48A 150 100 Switching Time - nanosecond 450 Switching Time - nanosecond 45 td(off) tfi - - - - - - 180 R G = 5Ω VGE = 15V VCE = 400V 160 140 TJ = 125ºC 120 100 80 60 TJ = 25ºC 40 5 10 15 20 25 30 R G - Ohms 35 40 45 50 10 15 20 25 30 35 I C - Amperes 40 45 50 IXGP 30N60C2 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 15 td(off) tfi - - - - - - 160 140 120 VCE = 300V I C = 24A I G = 10mA 12 I C = 48A 24A 12A R G = 5Ω VGE = 15V VCE = 400V VG E - Volts Switching Time - nanosecond 180 100 80 I C = 12A 24A 48A 60 9 6 3 40 0 25 35 45 55 65 75 85 95 105 115 125 0 10 20 TJ - Degrees Centigrade 30 40 50 60 70 Q G - nanoCoulombs Fig. 15. Capacitance 10000 Capacitance - p F f = 1 MHz C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 30 35 40 V C E - Volts Fig. 16. Maxim um Transient Therm al Resistance R (th) J C - (ºC/W) 1.0 0.5 0.1 1 © 2005 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000