PHOTOMULTlPLlER TUBES R3788, R4332 High Sensitivity, Bialkali Photocathode 28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type FEATURES Spectral Response R3788 .................................................... 185 to 750 nm R4332 ..................................................... 160 to 750 nm High Cathode Sensitivity Luminous ........................................... 120 A/lm Typ. Radiant at 420nm .................................. 90mA/W Typ. Quantum Efficiency at 210nm ......... 40% Typ. (R4332) High Anode Sensitivity (at 1000V) Luminous ............................................... 1200A/lm Typ. Radiant at 420nm ............................ 9.0 105 A/W Typ. APPLICATIONS Fluorescence Spectrophotometers Emission Spectrophotometers Atomic Absorption Spectrophotometers GENERAL Spectral Response R3788 R4332 Wavelength of Maximum Response Photocathode MateriaI Minimum Effective Area Window Material R3788 R4332 Figure 1: Typical Spectral Response Description Unit TPMSB0081EA 100 185 to 750 160 to 750 nm nm 420 nm Bialkali 8 24 mm UV glass Fused silica Dynode Secondary Emitting Surface Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base Weight SuitabIe Socket SuitabIe Socket Assembly Bialkali Circular-cage 9 4 6 11-pin base JEDEC No. B11-88 pF pF 45 g R4332 PHOTOCATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) Parameter CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY 10 R3788 1 0.1 0.01 100 200 300 400 500 600 700 800 WAVELENGTH (nm) E678–11A (option) E717–21(option) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1994 Hamamatsu Photonics K.K. PHOTOMULTlPLlER TUBES R3788, R4332 MAXIMUM RATINGS (Absolute Maximum Values) Parameter Value Unit Between Anode and Cathode 1250 Vdc Between Anode and Last Dynode 250 Vdc 0.1 mA Supply Voltage Average Anode Current A CHARACTERISTlCS (at 25 ) Parameter Min. R3788 Typ. 100 30 (at 250nm) 120 Cathode Sensitivity Quantum Efficiency at Peak Wavelength Luminous B Radiant at 194nm 210nm 420nm Red/White Ratio C Blue D Anode Sensitivity Luminous E Radiant at 194nm 210nm 420nm 500 Min. R4332 Typ. 100 40 (at 210nm) 120 31 50 90 60 68 90 0.01 10 0.01 10 1200 3.1 105 5.0 105 9.0 105 Gain E 500 107 1.0 Anode Dark Current Max. 50 Unit % A/lm mA/W mA/W mA/W A/lm-b 1200 6.0 105 6.8 105 9.0 105 A/lm A/W A/W A/W 107 1.0 5 F Max. 5 50 nA (After 30minutes Storage in the darkness) ENI(Equivalent Noise Input) G 1.4 10-16 1.4 10-16 W E Time Response Anode Pulse Rise Time H Electron Transit Time I Transit Time Spread (TTS) J Anode Current Stability Light Hysteresis Voltage Hysteresis 2.2 22 1.2 2.2 22 1.2 ns ns ns 0.1 1.0 0.1 1.0 % % K NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. C: Red/White ratio is the quotient of the cathode current measured using a red filter(Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as Note B. D: The value is cathode output current when a blue filter(Corning CS-5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. E: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1:Voltage Distribution Ratio Electrodes Distribution Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 SuppIy Voltage : 1000Vdc K : Cathode, Dy : Dynode, 1 1 1 P : Anode 1 1 1 P 1 F: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = 2q.ldb.G. f S q = Electronic charge (1.60 10-19 coulomb). ldb = Anode dark current(after 30 minutes storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. H: The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. where I: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. J: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. ANODE CURRENT K: Hysteresis is temporary instability in anode current after light and voltage are applied. l max. li l min. lmax Hysteresis = lmin. 100(%) li (1)Current Hysteresis The tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro-ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. TIME 5 0 6 7 (minutes) TPMSB0002EA Figure 2: Anode Luminous Sensitivity and Gain Characteristics 105 Figure 3: Typical Time Response TPMSB0004EB TPMSB0032EB 108 100 80 60 GAIN(TYP.) 104 107 TRAN SIT T 103 IME 106 102 105 ANOD LUMINOUS SENSITIVITY (TYP.) TIME (ns) 20 GAIN ANODE LUMINOUS SENSITIVITY (A/lm) 40 10 8 6 101 104 4 ANODE LUMINOUS SENSITIVITY (MIN.) 100 RISE TIME 103 2 10–1 500 600 700 800 1000 1200 102 1500 1 500 300 1000 1500 Figure 5: Typical EADCI (Equivalent Anode Dark Current Input) vs. Supply Voltage Figure 4: Typical ENI with Wavelength TPMSB0082EA TPMSB0034EA 10-12 10–9 10-13 10–10 EADCI (lm) EQUIVALENT NOISE INPUT (W) 700 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) R4332 10-14 10–11 R3788 10–12 10-15 10-16 100 200 300 400 500 600 WAVELENGTH (nm) 700 800 10–13 300 400 500 600 800 1000 SUPPLY VOLTAGE (V) 1500 PHOTOMULTlPLlER TUBES R3788, R4332 Unit : mm Figure 6: Dimensional Outline and Basing Diagram Figure 7: Socket E678-11A (Option) 49 28.5 1.5 38 DY5 PHOTOCATHODE 5 DY6 6 7 DY7 8 DY8 DY3 3 94MAX. 0.25 49.0 80MAX. 24MIN. DY4 4 33 T9 BULB 3.5 8MIN. 9 DY9 DY2 2 1 DY1 11 K 10 5 P DIRECTION OF LIGHT 4 29 BOTTOM VIEW (BASING DIAGRAM) 18 32.2 0.5 11 PIN BASE JEDEC No.B11-88 TACCA0008EB TPMSA0005EB Figure 8: D Type Socket Assembly E717-21 (Option) PMT 3.5 33.0 0.3 5 SOCKET PIN No. 10 P DY9 38.0 0.3 49.0 0.3 DY8 DY7 R10 C3 R9 C2 R8 C1 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK) 9 8 7 R7 DY6 6 DY5 5 DY4 4 DY3 3 DY2 2 DY1 1 R6 29 4.8 R5 450 10 41.0 0.5 R4 R3 31.0 0.5 HOUSING (INSULATOR) POTTING COMPOUND R2 R1 K 11 –HV AWG22 (VIOLET) R to R10 : 330k C1 to C3 : 0.01 F TACCA0002ED Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741 TPMS1021E01 FEB. 1994