2SA1700(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features 1 2 3 High breakdown voltage Adoption of MBIT process Excellent hFE linearity TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -0.2 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Symbol Dimensions in inches and (millimeters) unless Test otherwise specified) conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-10µA,IE=0 -400 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA,IB=0 -400 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA,IC=0 -5 V Collector cut-off current ICBO VCB=-300V,IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 µA DC current gain hFE VCE=-10V,IC=-50mA Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.8 V Base- emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -1 V Transition frequency fT VCE=-30V,IC=-10mA 70 MHz Output Capacitance Cob VCB=-30V,f=1MHz 5 pF Reverse Transfer Capacitance Cre VCB=-30V,f=1MHz 4 pF Turn-on Time ton 0.25 µS 5 µS 60 200 VCC=-150V,IB1=IB2=-5mA,RL=3KΩ toff Turn-off Time CLASSIFICATION OF Rank Range hFE D E 60-120 100-200 2SA1700(PNP) TO-251/TO-252-2L Transistor Typical Characteristics 2SA1700(PNP) TO-251/TO-252-2L Transistor