2SA940(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Wide safe Operating Area. Complementary to 2SC2703 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Paramenter Value Units VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 1.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-100μA, IE=0 -150 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-120V, IE=0 -10 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -10 μA DC current gain hFE VCE=-10V, IC=-0.5A VCE(sat) IC=-0.5A, IB=-50mA Base-emitter voltage VBE VCE=-10V, IC=-0.5A Transition frequency fT VCE=-10V, IC=-0.5A 4 MHz VCB=-10V, IE=0, f=1MHz 55 pF Collector-emitter saturation voltage Collector output capacitance Cob 40 140 -0.65 -1.5 V -0.85 V 2SA940(PNP) TO-220 Transistor Typical Characteristics