APTGT300A120D3G Phase leg Trench + Field Stop IGBT3 Power Module Q1 3 4 5 Q2 1 6 7 2 VCES = 1200V IC = 300A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 440 300 600 ±20 1450 Tj = 125°C 600A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V A March, 2011 Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT300A120D3G – Rev 2 Symbol VCES APTGT300A120D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 300A Tj = 125°C VGE = VCE , IC = 12mA VGE = 20V, VCE = 0V Min Typ 5.0 1.7 2.0 5.8 Max Unit 500 2.1 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Input Capacitance Cies Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE=±15V, IC=300A VCE=600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 300A RG = 2.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 300A RG = 2.2Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 300A Tj = 125°C RG = 2.2Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Min Test Conditions Min 1200 Typ 21 1 nF 2.8 µC 250 90 550 ns 130 300 100 ns 650 180 25 mJ 44 1200 A Reverse diode ratings and characteristics IF Maximum Reverse Leakage Current VR=1200V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy IF = 300A VGE = 0V IF = 300A VR = 600V di/dt =3500A/µs Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 300 1.6 1.6 170 Tj = 125°C 280 Tj = 25°C Tj = 125°C Tj = 25°C 28 56 12 Tj = 125°C 22 www.microsemi.com Max 750 1000 Unit V µA A 2.1 V ns March, 2011 IRRM Typ µC mJ 2-5 APTGT300A120D3G – Rev 2 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT300A120D3G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight For terminals To Heatsink M6 M6 4000 -40 -40 -40 3 3 Typ Max 0.085 0.16 Unit °C/W V 150 125 125 5 5 350 °C N.m g D3 Package outline (dimensions in mm) 1° A www.microsemi.com 3-5 APTGT300A120D3G – Rev 2 March, 2011 DÉTAIL A APTGT300A120D3G Typical Performance Curve Output Characteristics 600 500 500 TJ=25°C TJ = 125°C VGE=17V TJ=125°C 300 VGE=15V 300 200 200 100 100 0 VGE=9V 0 0 1 2 3 4 0 1 2 VCE (V) VCE (V) 3 4 Energy losses vs Collector Current Transfert Characteristics 600 100 500 E (mJ) 300 200 VCE = 600V VGE = 15V RG = 2.2 Ω TJ = 125°C 80 TJ=25°C 400 IC (A) VGE=13V 400 400 IC (A) IC (A) Output Characteristics (VGE=15V) 600 TJ=125°C 60 Eoff Eon 40 Err 20 100 Eon 0 0 5 6 7 8 9 VGE (V) 10 11 0 12 200 300 400 500 600 IC (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 150 700 VCE = 600V VGE =15V IC = 300A TJ = 125°C 100 75 Eon 600 500 IC (A) 125 E (mJ) 100 Eoff 50 400 300 VGE=15V TJ=125°C RG=2.2 Ω 200 25 100 Err 0 0 0 4 8 12 16 Gate Resistance (ohms) 0 20 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.06 IGBT 0.9 March, 2011 0.08 0.7 0.5 0.04 0.02 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT300A120D3G – Rev 2 Thermal Impedance (°C/W) 0.1 APTGT300A120D3G Forward Characteristic of diode 600 VCE=600V D=50% RG=2.2 Ω TJ=125°C TC=75°C 40 30 TJ=25°C 500 400 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 50 ZVS 20 300 ZCS 200 Hard switching 10 TJ=125°C 100 0 0 0 100 200 300 IC (A) 400 500 0 0.4 0.8 1.2 VF (V) 1.6 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 Diode 0.14 0.12 0.1 0.08 0.06 0.7 0.5 0.3 0.04 0.1 0.02 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 5-5 APTGT300A120D3G – Rev 2 March, 2011 rectangular Pulse Duration (Seconds)