APTGF250DA60D3G VCES = 600V IC = 250A @ Tc = 80°C Boost chopper NPT IGBT Power Module 3 Q2 1 6 7 2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 125°C 600A @ 520V TC = 25°C TC = 80°C TC = 25°C Unit V A September, 2008 IC Max ratings 600 400 250 600 ±20 1250 RBSOA Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF250DA60D3G – Rev 0 Symbol VCES APTGF250DA60D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE = 15V IC = 300A Tj = 125°C VGE = VCE , IC = 6 mA VGE = 20V, VCE = 0V 5.0 Typ 1.95 2.2 5.8 Max Unit 500 2.45 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE=15V, IC=300A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 300A RG = 6Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 300A RG = 6Ω VGE = ±15V Tj = 125°C VBus = 300V IC = 300A Tj = 125°C RG = 6Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Min Test Conditions Min 600 Typ 13 1.2 nF 720 nC 150 72 530 ns 40 160 75 ns 550 50 14 mJ 13 1350 A Reverse diode ratings and characteristics IF Maximum Reverse Leakage Current VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 300A VGE = 0V IF = 300A VR = 300V di/dt =4800A/µs Err Reverse Recovery Energy Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C www.microsemi.com Max 750 1000 300 1.25 1.2 150 250 20 32 4 7.6 Unit V µA A 1.6 V September, 2008 IRRM Typ ns µC mJ 2-5 APTGF250DA60D3G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGF250DA60D3G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight For terminals To Heatsink M6 M6 2500 -40 -40 -40 3 3 Typ Max 0.1 0.21 Unit °C/W V 150 125 125 5 5 350 °C N.m g D3 Package outline (dimensions in mm) 1° A www.microsemi.com 3-5 APTGF250DA60D3G – Rev 0 September, 2008 DÉTAIL A APTGF250DA60D3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 600 600 TJ=25°C VGE=15V VGE=20V 400 400 TJ=125°C 300 200 200 100 100 VGE=9V 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 0 30 25 400 20 E (mJ) 500 300 TJ=125°C 200 2 3 VCE (V) 4 VCE = 300V VGE = 15V RG = 6 Ω TJ = 125°C 5 Eon Eoff 15 10 Err 5 TJ=25°C 100 1 Energy losses vs Collector Current Transfert Characteristics 600 0 0 5 6 7 8 9 10 11 0 12 150 300 Switching Energy Losses vs Gate Resistance 40 600 Reverse Safe Operating Area 700 Eon VCE = 300V VGE =15V IC = 300A TJ = 125°C 600 500 Eoff IC (A) 30 450 IC (A) VGE (V) E (mJ) VGE=12V 300 0 IC (A) TJ = 125°C 500 IC (A) IC (A) 500 20 400 300 VGE=15V TJ=125°C RG=6 Ω 200 10 Err 100 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 0 30 100 200 300 400 500 600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 September, 2008 IGBT 0.1 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 4-5 APTGF250DA60D3G – Rev 0 Thermal Impedance (°C/W) 0.12 APTGF250DA60D3G VCE=300V D=50% RG=6Ω TJ=125°C TC=75°C 60 50 ZVS 40 500 400 ZCS 30 hard switching 20 300 TJ=125°C 200 TJ=25°C 100 10 0 0 0 100 200 IC (A) 300 0 400 0.3 0.6 0.9 VF (V) 1.2 1.5 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.22 Thermal Impedance (°C/W) Forward Characteristic of diode 600 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70 0.9 0.18 Diode 0.7 0.14 0.5 0.1 0.3 0.06 0.1 0.02 Single Pulse 0.05 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF250DA60D3G – Rev 0 September, 2008 -0.02 0.00001