SiC Power MOSFET Double 1200 Volt 20 Amp Hermetic MYXM21200-20GAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • Two devices in one hermetic package. • High blocking voltage with low RDS(on) • High voltage 1200V isolation in a small package outline • Reduction of heat sink requirements • High current 20A • High temperature 210OC • RoHS compliant Applications m i l e r P • HMP solder tinned leads available • Electrically isolated flange / case • Silicon Carbide (SiC) device, gives a superior high temperature performance • No reverse recovery time • Screening options available Figure 1: TO-259 • Harsh environment motor drive • Harsh environment inverter • Induction heater ºº Commercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request • Other package options available Pin6 Pin5 Pin4 Pin1 Pin2 Pin3 Figure 2: Circuit Diagram Absolute Maximum Ratings* (Per single device) Symbols VDS Parameters Drain Source Voltage Values Units 1200 Volts Continuous Drain Current 20 Continuous Drain Current 18 IAR Repetitive Avalanche Current (ID = 20A, VDD = 50 V, L = 3 mH ) 18 Amps VGS Gate Source Voltage -5 / +25 Volts PTOT Total Power Dissipation 77 Watts ID Amps TJ Junction Temperature Range -55 to +210 o Tstg Storage Temperature Range -55 to +210 o C C Thermal Properties Symbols RθJC March 2014 Rev 1.0 Parameters Values Thermal Resistance, Junction To Case 2.4 Units o C / Watt 1 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Power MOSFET Double 1200 Volt 20 Amp Hermetic MYXM21200-20GAB y r a in Electrical Characteristics (Per single device) Symbols V(BR)DSS Parameters Test Conditions Drain Source Breakdown VGS=0V, ID=100µA, TJ =25oC Min m i l e r P Gate Threshold IDSS Zero Gate Voltage Drain IGSS Gate-Source Leakage Current RDS(On) Drain Source On State Resistance VDS=VGS, ID=1mA, TJ =25oC Max 1200 VDS=VGS, ID=1mA, TJ =-55oC VGS(th) Typ Units Volts 3.8 0.1 3.1 4.5 Volts VDS=VGS, ID=1mA, TJ =125oC 2.5 VDS=VGS, ID=1mA, TJ =210oC 2.2 VDS=1200V, VGS=0V, TJ =25oC 1 100 VDS=1200V, VGS=0V, TJ =210oC 10 450 0.06 0.25 µA VGS=20V, VDS=0V, TJ =25oC VGS=20V, ID=20A, TJ =-55oC 70 100 125 VGS=20V, ID=20A, TJ =25oC 70 100 125 VGS=20V, ID=20A, TJ =125oC 90 110 150 VGS=20V, ID=20A, TJ =210oC 120 155 175 Typ Max µA mΩ Built in Body Diode Electrical Characteristics (Per single device) Symbols VSD Parameters Diode Forward Voltage Test Conditions Min VGS=-5V, IF=10A, TJ =25oC 3.5 VGS=-2V, IF=10A, TJ =25oC 3.1 Units Volts Gate Charge Characteristics (Per single device) Symbols Parameters Qgs Gate to Source Charge Qgd Gate to Drain Charge Qg Gate Charge Total March 2014 Rev 1.0 Test Conditions Min Typ Max Units 23.8 VDD =800V, VGS = 0/20V, ID = 20A TJ =25oC 43.1 nC 90.8 2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Power MOSFET Double 1200 Volt 20 Amp Hermetic MYXM21200-20GAB y r a in m i l e r P M I CROS S 120 2 M Y X M 0 -20 G A B # #### ## yyww GA = TO-259 Package Type ####### = Batch code yyww = Date code yy = year ww = week (Font and text colour is not representative of actual parts produced) Figure 3: Package Dimensions & Part Marking March 2014 Rev 1.0 3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Power MOSFET Double 1200 Volt 20 Amp Hermetic MYXM21200-20GAB y r a in * Absolute Maximum Ratings Disclaimer Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and operational life. Document Title m i l e r P Silicon Carbide Power Mosfet Double1200 Volt 20 Amp Hermetic MYXM21200-20GAB Revision History Revision # History 1.0 Initial release March 2014 Rev 1.0 Release Date March 2014 Status Preliminary 4 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com